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    MG300Q Price and Stock

    Powerex Power Semiconductors MG300Q2YS60A

    IGBT MOD 1200V 300A 2800W
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    Toshiba America Electronic Components MG300Q1US42

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MG300Q1US42 175 1
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    • 100 $98.4
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    Quest Components MG300Q1US42 140
    • 1 $130
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    • 100 $105
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    Toshiba America Electronic Components MG300Q1US41

    IGBT Power Module Transistor, Independent
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    Quest Components MG300Q1US41 1
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    MG300Q Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG300Q1UK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1UK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1UK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG300Q1UK1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG300Q1UK1 Westcode Semiconductors NPN transistor for high power switching and notor control applications, 1200V, 300A Scan PDF
    MG300Q1US1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US11 Toshiba V(ces): 1200V V(ges): ±20V 2000W insulated gate bipolar transistor. For high power switching and motor control applications Scan PDF
    MG300Q1US2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US2 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US21 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US21 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300Q1US41 Toshiba TRANS IGBT MODULE N-CH 1200V 300A 4(2-109A4A) Original PDF
    MG300Q1US41 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG300Q1US41 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG300Q1US41 Toshiba GTR Module - Silicon N-Channel IGBT Scan PDF
    MG300Q1US41(AC:G) Toshiba TRANS IGBT MODULE N-CH 1200V 300A 4(2-109A4A) Original PDF
    MG300Q1US51 Toshiba TRANS IGBT MODULE N-CH 1200V 400A 4(2-109F1A) Original PDF

    MG300Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG300Q1US41

    Abstract: No abstract text available
    Text: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE(sat) = 4.0V (Max.)


    Original     		PDF MG300Q1US41 2-109A4A MG300Q1US41

    Untitled

    Abstract: No abstract text available
    Text: MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode


    Original     		PDF MG300Q2YS50 2-109C1A

    MG300Q2YS61

    Abstract: toshiba G2 MG300Q2YS
    Text: MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications • High input impedance · High speed: tf = 0.3 µs max Unit: mm Inductive load · Low saturation voltage: VCE (sat) = 2.6 V (max)


    Original     		PDF MG300Q2YS61 2-109C4A MG300Q2YS61 toshiba G2 MG300Q2YS

    MG300Q2YS61

    Abstract: MG300Q2YS
    Text: MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications • High input impedance • High speed: tf = 0.3 µs max Unit: mm Inductive load • Low saturation voltage: VCE (sat) = 2.6 V (max)


    Original     		PDF MG300Q2YS61 2-109C4A MG300Q2YS61 MG300Q2YS

    MG300Q2YS65H

    Abstract: No abstract text available
    Text: MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2


    Original     		PDF MG300Q2YS65H 2-109C4A MG300Q2YS65H

    MG300Q2YS60A

    Abstract: No abstract text available
    Text: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG300Q2YS60A MG300Q2YS60A 200V/300A 2-123C1B

    Untitled

    Abstract: No abstract text available
    Text: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)


    Original     		PDF MG300Q1US51 2-109F1A

    Untitled

    Abstract: No abstract text available
    Text: MG300Q2YS60A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 300 Amperes/1200 Volts A D L J K W N M V E2 C1 C H B DETAIL "A" F E C2E1 U W R R T S Z Q P Y X X Q G C1 7 5 5 6 AA


    Original     		PDF MG300Q2YS60A Amperes/1200

    Untitled

    Abstract: No abstract text available
    Text: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG300Q2YS60A MG300Q2YS60A 200V/300A 2-123C1B

    300Q1US41

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V


    OCR Scan     		PDF MG300Q1US41 00A/ius 300Q1US41

    Tag 676 800

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300 2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • H ig h I n p u t Im p ed an ce • H ig h S p eed : t f = 0 .3 / / s M ax. •In d u c tiv e L oad •


    OCR Scan     		PDF MG300Q2YS50 MG300 2YS50 Tag 676 800

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed EQUIVALENT CIRCUIT : tf = 0.5^s Max. trr = 0.5,«s (Max.) V cE (sat) = 4.0V (Max.)


    OCR Scan     		PDF MG300Q2YS40 2-109D2A 00A//iS TjS125

    MG300Q2YS50

    Abstract: 300AT
    Text: TOSHIBA MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2 YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG300Q2YS50 300Q2Y MG300Q2YS50 300AT

    MG300Q1US51

    Abstract: MG300Q1
    Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3^s Max. @Induetive Load Low Saturation Voltage : VCE (Sat) =3.6V (Max.)


    OCR Scan     		PDF MG300Q1US51 MG300Q1 2-109F1A MG300Q1US51

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US51 TO SH IBA GTR M O D U L E M G 3 SILICON N C H A N N EL IGBT Q 1 U S 5 1 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H ig h sp eed : tf= 0 .3 /Æ Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG300Q1US51 1256C VCE25i

    mg30

    Abstract: MG300Q1US51 P channel 600v 300a IGBT
    Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)


    OCR Scan     		PDF MG300Q1US51 MG300Q1 2-109F1A mg30 MG300Q1US51 P channel 600v 300a IGBT

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .3 /«s Max. Inductive Load • Low Saturation Voltage


    OCR Scan     		PDF MG300Q2YS50 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: TO TOSHIBA {DISCRETE/OPTO} DE I SOTTESO DOItiID ? | 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D T “3 3 - 3 S 90D 16110 SEM ICO N DU CTO R TOSHIBA GTR MODULE MG300Q1UK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE HIGH POWER SWITCHING APPLICATIONS.


    OCR Scan     		PDF MG300Q1UK1

    MG25M1BK1

    Abstract: MG30M1BN1 MG200M1FK1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100
    Text: Bipolar Darlington 2 Connection Vceo(SUS) (V) 10 15 20 BK 25 Maximum Rating M A) 50 MG25M1BK1 MG50M1BK1 75 100 150 200 300 MG75M1BK1 1000 MG30M1BN1 (SINGLE) FK MG200M1FK1 MG300M1FK1 1000 MG200M1UK1 MG300M1UK1 1200 MG200Q1UK1 MG300Q1UK1 MG300M1UK2 UK 1400


    OCR Scan     		PDF MG30M1BN1 MG50M1BK1 MG75M1BK1 MG25M1BK1 MG200M1FK1 MG200M1UK1 MG300M1FK1 MG300M1UK1 MG300M1UK2 MG25M2CK2 MG25M1BK1 MG30M1BN1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTRO L APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. Inductive Load • Low Saturation Voltage


    OCR Scan     		PDF MG300Q2YS50 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G300Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG300Q1US51 G300Q TjS125

    jSw Diode

    Abstract: No abstract text available
    Text: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG300Q2YS50 961001EAA1 jSw Diode

    MG300Q1US11

    Abstract: GE-540 GE-54 221D
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG300Q1US11 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input im pedance • High speed: tf = 1 .O^s Max. • Low saturation voltage: = 0 .5 n s (Max.)


    OCR Scan     		PDF MG300Q1US11 TDT72SD PW03960796 MG300Q1US11 GE-540 GE-54 221D

    MG300Q1US41

    Abstract: S60C
    Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MO DULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US 4 1 HIGH POWER SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5/^s (Max.) Low Saturation Voltage : V c E (sa t) = 4.0V


    OCR Scan     		PDF MG300Q1US41 2-109A4A MG300Q1US41 S60C