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    Powerex Power Semiconductors MG300Q2YS60A

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    MG300Q2 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG300Q2YS40 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG300Q2YS40 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG300Q2YS50 Toshiba TRANS IGBT MODULE N-CH 1200V 400A 7(2-109C1A) Original PDF
    MG300Q2YS50 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG300Q2YS60A Mitsubishi TRANS IGBT MODULE N-CH 1200V 300A Original PDF
    MG300Q2YS60A Powerex IGBTs - Modules, Discrete Semiconductor Products, IGBT MOD CMPCT DUAL 1200V 300A Original PDF
    MG300Q2YS60A Toshiba Silicon N Channel IGBT Original PDF
    MG300Q2YS60A Toshiba Compact IGBT Modules & Compact IPM Original PDF
    MG300Q2YS61 Toshiba Silicon N Channel IGBT Original PDF
    MG300Q2YS61 Toshiba TRANS IGBT MODULE N-CH 1200V 300A 7(2-109C4A) Original PDF
    MG300Q2YS65H Toshiba TRANS IGBT MODULE N-CH 1200V 300A 7(2-109C4A) Original PDF
    MG300Q2YS65H Toshiba Original PDF

    MG300Q2 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode


    Original     		PDF MG300Q2YS50 2-109C1A

    MG300Q2YS61

    Abstract: toshiba G2 MG300Q2YS
    Text: MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications • High input impedance · High speed: tf = 0.3 µs max Unit: mm Inductive load · Low saturation voltage: VCE (sat) = 2.6 V (max)


    Original     		PDF MG300Q2YS61 2-109C4A MG300Q2YS61 toshiba G2 MG300Q2YS

    MG300Q2YS61

    Abstract: MG300Q2YS
    Text: MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications • High input impedance • High speed: tf = 0.3 µs max Unit: mm Inductive load • Low saturation voltage: VCE (sat) = 2.6 V (max)


    Original     		PDF MG300Q2YS61 2-109C4A MG300Q2YS61 MG300Q2YS

    MG300Q2YS65H

    Abstract: No abstract text available
    Text: MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2


    Original     		PDF MG300Q2YS65H 2-109C4A MG300Q2YS65H

    MG300Q2YS60A

    Abstract: No abstract text available
    Text: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG300Q2YS60A MG300Q2YS60A 200V/300A 2-123C1B

    Untitled

    Abstract: No abstract text available
    Text: MG300Q2YS60A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 300 Amperes/1200 Volts A D L J K W N M V E2 C1 C H B DETAIL "A" F E C2E1 U W R R T S Z Q P Y X X Q G C1 7 5 5 6 AA


    Original     		PDF MG300Q2YS60A Amperes/1200

    Untitled

    Abstract: No abstract text available
    Text: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG300Q2YS60A MG300Q2YS60A 200V/300A 2-123C1B

    MG300Q2YS50

    Abstract: No abstract text available
    Text: MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)


    Original     		PDF MG300Q2YS50 2-109C1A 15ments, MG300Q2YS50

    Untitled

    Abstract: No abstract text available
    Text: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG300Q2YS60A 200V/300A 2-123C1B

    MG300Q2YS50

    Abstract: 2-109C1A
    Text: MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode


    Original     		PDF MG300Q2YS50 2-109C1A MG300Q2YS50 2-109C1A

    MG300Q2YS60A

    Abstract: PC2800 300A2
    Text: MG300Q2YS60A MITSUBISHI IGBT Module MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG300Q2YS60A MG300Q2YS60A 200V/300A PC2800 300A2

    Untitled

    Abstract: No abstract text available
    Text: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG300Q2YS60A MG300Q2YS60A 200V/300A 2-123C1B

    Untitled

    Abstract: No abstract text available
    Text: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG300Q2YS60A MG300Q2YS60A 200V/300A 2-123C1B

    GE semiconductor data handbook

    Abstract: ge-20 transistor TOSHIBA IGBT DATA BOOK MG300Q2YS65H IC3001
    Text: MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications • High input impedance · Enhancement-mode · The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC


    Original     		PDF MG300Q2YS65H 2-109C4A GE semiconductor data handbook ge-20 transistor TOSHIBA IGBT DATA BOOK MG300Q2YS65H IC3001

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed EQUIVALENT CIRCUIT : tf = 0.5^s Max. trr = 0.5,«s (Max.) V cE (sat) = 4.0V (Max.)


    OCR Scan     		PDF MG300Q2YS40 2-109D2A 00A//iS TjS125

    MG300Q2YS50

    Abstract: 300AT
    Text: TOSHIBA MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2 YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG300Q2YS50 300Q2Y MG300Q2YS50 300AT

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .3 /«s Max. Inductive Load • Low Saturation Voltage


    OCR Scan     		PDF MG300Q2YS50 961001EAA1

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTRO L APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. Inductive Load • Low Saturation Voltage


    OCR Scan     		PDF MG300Q2YS50 961001EAA1

    jSw Diode

    Abstract: No abstract text available
    Text: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG300Q2YS50 961001EAA1 jSw Diode

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed EQUIVALENT CIRCUIT : tf = 0.5^s Max. trr = 0.5,«s (Max.) V cE (sat) = 4.0V (Max.)


    OCR Scan     		PDF MG300Q2YS40 2-109D2A

    YS40

    Abstract: MG300Q2YS40 MG300Q2YS MG300Q
    Text: TOSHIBA MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2 YS40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed EQUIVALENT CIRCUIT : tf= O.ô^s Max. trr —0.5/43 (Max.) Low Saturation Voltage : VCE(sat)~4-W (Max.)


    OCR Scan     		PDF MG300Q2YS40 MG300Q2 2-109D2A YS40 MG300Q2YS40 MG300Q2YS MG300Q

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q2YS40 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH P O W ER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. H ig h In p u t Im p e d an ce EQ U IVA LEN T CIRCUIT H ig h Speed tf=0.5//s M a x . Cl t 1T = 0.5//s (M a x .)


    OCR Scan     		PDF MG300Q2YS40 2-109D2A

    MG300Q2YS50

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2 YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.3;i*s Max. 0 Inductive Load Low Saturation Voltage : v CE(sat) —3.6V (Max.)


    OCR Scan     		PDF MG300Q2YS50 MG300Q2 2-109C1A 961001eaa1 50//s> MG300Q2YS50

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • t High Input Impedance High Speed : tf^O.S/zs Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG300Q2YS50 961001EAA1