Untitled
Abstract: No abstract text available
Text: H M 5 1 1 0 0 1 A S e r i e s - 1,048,576-Word x 1-Bit CMOS Dynamic RAMI • DESCRIPTION H M 5 1 1 0 0 1 A P S e r ie s The Hitachi H M 511001A series is a C M OS dynamic RAM organized 1,048,576word x 1-bit. H M 511001A has realized higher density, higher performance and vari
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576-Word
11001A
576word
18-pin
20-pin
3DDP16C
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HM511001AP-12
Abstract: 511001AP
Text: 511001A Series 1,048,576-Word x 1-Bit CMOS Dynamic RAM • DESCRIPTION HM 511001AP Series The H itachi H M 51 1 0 01 A series is a C M OS dynam ic R AM organized 1,048,576w ord x 1-bit. H M 51 1001A has realized higher density, higher p erform ance and vari
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HM511001A
576-Word
11001A
18-pin
20-pin
3DOP18C
511001AP
HM511001AP-12
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CSR 8811
Abstract: HM511001AP6 HM511001 HM511001ajp
Text: H M 5 1 1 0 0 1 A S e r ie s 1,048,576-Word x 1-Bit CMOS Dynamic RAMI • DESCRIPTION H M 511001A P Series The Hitachi 511001A series is a CMOS dynamic RAM organized 1,048,576word x 1-bit. 511001A has realized higher density, higher performance and vari
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HM511001A
576-Word
18-pin
20-pin
CSR 8811
HM511001AP6
HM511001
HM511001ajp
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511001A
Abstract: A8 Jh
Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA 511001A Advance Information 1 M x 1 C M O S Dynamic RAM P PACKAGE PLASTIC CASE 707A The M C M 511001A is a 1.0^ C M O S high-speed, dynamic random access memory. It is organized as 1,048,576 one-bit words and fabricated with CM O S silicon-gate process
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MCM511001A
11001A
300-mil
100-mil
511001AP80
1001AP10
511001A
A8 Jh
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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514100A
Abstract: No abstract text available
Text: O K I Semiconductor IC MSM6691 DRAM INTERFACE LSI Description Features DRAMs can be used for voice storage by connecting the MSM6691 with Oki's integrateR /W Read/Write LSIs, theMSM6388, andtheMSM6588. TheMSM6691 translates the signals associated with the dedicated
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MSM6691
MSM6691
theMSM6388,
andtheMSM6588.
TheMSM6691
MSM6388
MSM6588
16-bit
1100A
11001A)
514100A
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM6791 DRAM INTERFACE LSI G E N E R A L D E S C R IP T IO N MSM6791 can be used as a memory for which DRAM stores a voice data by connecting OKI solidstate recording and playback LSIs MSM6788 and MSM6688 . FEATURES • DRAM (x 1-bit configuration)
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MSM6791
MSM6791
MSM6788
MSM6688)
MSM511000A,
11001A)
MSM514100A,
14101A)
16M-bit
MSM5116100)
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MCM511001AZ80
Abstract: CM511001 MCM511001AJ70 511001A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 511001A 1 M x 1 C M O S D ynam ic R A M Nibble M o d e P PACKAGE 300 MIL PLASTIC CASE 707A The 511001A is a 1.0/* CMOS high-speed, dynam ic random access memory. It is organized as 1,048,576 one-bit w ords and fabricated w ith CMOS silicon-gate process
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MCM511001A
300-mil
100-mil
511001AP70
MCM511001AP80
MCM511001AP10
MCM511001AJ70
MCM511001AZ80
CM511001
511001A
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MCM511001AJ70
Abstract: 9141a MCM511001A-70 B11001A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 511001A 1 M x 1 C M O S Dynamic RAM Nibble Mode P PACKAGE 300 MIL PLASTIC CASE 707A The 511001A is a 1.0/i CMOS high-speed, dynamic random access memory- it is organized as 1,048,576 one-bit words and fabricated w ith CMOS silicon-gate process
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MCM511001A
MCM511001A
300-mil
100-mil
511001AP70
MCM511001AP80
MCM511001AP10
MCM511001AJ70
9141a
MCM511001A-70
B11001A
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mz 1532
Abstract: MSM511001A-70 FZJ 165 511001A
Text: 4bE D w • b?24S4ü O K I □ □□ 'IS n SEMICONDUCTOR O K I semiconductor 511001A 1,048,576-WORD b'H «O K IJ GROUP T - V é 'Z S W 1-BITS DYNAMIC RAM x GENERAL DESCRIPTION The 511001A is a new generation dynamic RAM organized as 1,048,576 woids by 1 bit. The
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2424G
MSM511001A
576-WORD
MSM511001A-70
140ns
468mW
MSM511001A-8A/80
160ns
mz 1532
FZJ 165
511001A
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mcm2018a
Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
mcm2018a
sun hold RAS 0610
cqq 765 RT
IC HX 710B
U256D
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MCM511001AZ80
Abstract: MCM511001 MCM511001AJ80 XXXXXXX
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 511001A 1M x 1 CM O S Dynamic RAM Nibble M o d e P PACKAGE 300 MIL PLASTIC CA SE 707A The 511001A is a 1.0/t CM OS high-speed, dynamic random access memory. It is organized as 1,048,576 one-bit words and fabricated with CM OS silicon-gate process
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MCM511001A
300-mil
100-mil
Numbers--MCM511001AP70
MCM511001AP80
MCM511001
MCM511001AZ80
MCM511001AJ80
XXXXXXX
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TC51001
Abstract: No abstract text available
Text: TENTATIVE DATA 1,048,576 W O R D x 1 BIT DYNAM IC RAM DESCRIPTION The 511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The 511001AP/AJ/AZ utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both in ternally and to the system user.
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TC511001AP/AJ/AZ
TC511001AP/AJ/AZ-70,
TC511001AP/AJ/AZ-80
TC511001AP/AJ/AZ-10
TC51001
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MSM511001A-70
Abstract: MSM OKI 80 PIN
Text: SfiE D • b?2M2M0 O K I QD127bf i b07 H I O K I J SEMI CONDUCTOR 6R0UP O K I semiconductor _ 2.3MSM511001 A _ 1 ,0 4 8 ,5 7 6 -W O R D x 1 -B IT D Y N A M IC R A M _ _ _ GENERAL DESCRIPTION The 511001A is a new generation dynamic RAM organized as 1,048,576 words x1 bit. The
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00127bfl
MSM511001A
576-WORD
MSM511001A
L7242M0
DD12777
b724240
DD1S77Ã
MSM511001A-70
MSM OKI 80 PIN
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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511001A
Abstract: No abstract text available
Text: O K I semiconductor MSM511001 A_ 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The 511001A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the 511001A is OKI's CMOS silicon gate process technology.
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MSM511001A
576-WORD
MSM511001A
refres1001A»
MSM511001
MSM511001A«
511001A
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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OCR Scan
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PDF
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A16685-7
EMTR1147
sun hold RAS 0610
oki Logic
Motorola transistor 7144
MSC2304
M5M41000
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