dilmon 28
Abstract: transistor DA 218
Text: be!E D • 37bfi522 DD1770R RflO m P L S B PSLU4I G E C P L E S S E Y GEC PLESSEY SEMICONDS S E M I C O N D U C T O R S DS2349-2.2 ULA DA SERIES ANALOG/DIGITAL MIXED SIGNAL ARRAY FAMILY Supersedes June 1990 Edition The ULA DA Series is a family of 8 arrays developed to
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37bfi522
DD1770R
DS2349-2
dilmon 28
transistor DA 218
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TA8116F
Abstract: No abstract text available
Text: TOSHIBA-. ELECTRONIC DE D Ë ^ ci[ c17247 DD177Sa 3 | 02E 9097247 T O S H I B A . ELECTRONIC 17752 TA8116F TENTATIVE . FM FRONT END Unit in mm TA8116F, an IC designed for car-tuner, has the 16 functions of the mixer provided wi th remarkably 9 BBflQQ BflQ
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DD177Sa
TA8116F
TA8116F,
-20dBu,
-20dB/J
-20dBfi
00177S4
T-77-0
00177SS
TA8116F
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MI407
Abstract: No abstract text available
Text: bSMSÔSS DD17741 b TE • ANTENNA SWITCH M I407 PIN DIODE RF POWER SWITCHING DESCRIPTION Dimension: mm OUTLINE DRAWING The MI407 PIN diode is employing a high reliability glass construction, designed for solid state antenna switches in commercial two-way radios.
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DD17741
MI407
-80dBc,
-73dBc
90dBii)
680MHz
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Untitled
Abstract: No abstract text available
Text: bEMTÖER DD177t 7 HYBRID ANTENNA SWITCH =5D*1 MD003 8 0 0 -9 4 0 M H z , 5W, ANTENNA SWITCH MINIATURE RF ANTENNA SWITCH MD003 is designed to cover 800 — 940MHz, 5W, antenna switch module. • Small, Easilly Mounted Package. • High Isolation: 35dB Typ.
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DD177t
MD003
MD003
940MHz,
-70dBc
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MAC15 triac
Abstract: 30427 MAC15A T17A MAC15 MAC15-10 MAC15-4 MAC15-6 MAC15-8 MAC15A-4
Text: G E SOLI» STATE 3875081 □1 T T | B ñ 7 S 0 ñ l DD177fil 3 0 1E 1 7781 G E SO LI D STATE MAC15, MAC15A Series D File Number 1086 15-A Silicon Triacs Three-Lead Plastic Types for Power-Control and Power-Switching Applications Features: • 800V, 125 Deg. C Tj Operating
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DD177Ã
MAC15,
MAC15A
RCA-MAC15
92C5-90430
92LS-2409R4
92CS-ISMÂ
MAC15 triac
30427
T17A
MAC15
MAC15-10
MAC15-4
MAC15-6
MAC15-8
MAC15A-4
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Untitled
Abstract: No abstract text available
Text: HITACHI/ LOGIC /AR RAYS/MEM SIE II MM1baG3 DD17703 HN62444 Series- TO b • H IT S T—46—13—15 4M 256K x 16-bit and (512K x 8-bit) Mask ROM ■ DESCRIPTION The Hitachi HN62444is a 4-Megabit CMOS Mask Programmable Read Only Memory organized as 262,144 x 16-bit and 524,288 x 8bit.
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DD17703
HN62444
16-bit)
HN62444is
16-bit
40-pin
48-lead
HN62444
44-lead
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MI308
Abstract: No abstract text available
Text: , bEli tîflEtl DD17735 ANTENNA SWITCH 3TT • Ml308 PIN DIODE RF POWER SWITCHING DESCRIPTION OUTLINE DRAWING The M I3 0 8 PIN diode is employing a high reliability glass Dim ension: mm construction, designed for solid state antenna switchs in commercial tw o-w ay radios.
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DD17735
Ml308
90dB/i)
MI308
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E ]> • 7 ^ b m M 5 DD177Dh 117 SPIGK PRELIMINARY KM644002 CMOS SRAM 1,048,576 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15,20, 25ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)
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DD177Dh
KM644002
KM644002J-15
170mA
KM644002J-20:
150mA
KM644002J-25:
130mA
KM644002J:
32-Pin
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Untitled
Abstract: No abstract text available
Text: MSE D • ‘ÌO'ÌTSSD TOSHIBA TOSHIBA TRANSISTOR 2 DD17777 «T O S ii DISCRETE/OPTO 2N5550 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) FO R G E N E R A L P U R P O S E USE HIGH V O L T A G E AMPLIFIER APPLICATIONS. . High C ollector Breakdown Voltage •'
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DD17777
2N5550
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S6431m
Abstract: RCA-S6493M S6493M
Text: G E SOLI» STATE Dl 3875081 G E SOLID STATE S ilicon C ontrolled Rectifiers DE I 3fl750öl DD1774E M 01E 17742 D S6493M File Number Silicon Controlled Rectifier For High-Current Pulse Applications
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S6493M
RCA-S6493M*
S6493M
92CSH3366R2
S6431m
RCA-S6493M
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KM6164002j
Abstract: KM6164002 ISE Electronics
Text: SAMSUNG ELECTRONICS INC b7E D • 7^4145 DD177BD ST7 PRELIMINARY KM6164002 spigk CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)
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KM6164002
D0177BD
KM6164002J-20:
240mA
KM6164002J-25:
220mA
KM6164002J-35:
200mA
KM6164002J:
44-Pln
KM6164002j
KM6164002
ISE Electronics
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SRAM timing
Abstract: No abstract text available
Text: SAMSUNG E L E C TRONICS INC b7E J> • 7TbmN2 0Ü177M2 KM79C86 ISfi M S I I S K CMOS SRAM 3 2 K x9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • Synchronous Operation The KM79C86 is a 294,912 bit S ynchronou s S tatic Ran
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KM79C86
32Kx9
44-Pin
912xx/
KM79C86
7Tb4142
DD177S1
SRAM timing
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Untitled
Abstract: No abstract text available
Text: ¡¡ S ix 1 28K X 32 CMOS STATIC RAM MODULE \ y Integrated Device Technology, Inc. IDT7MP4095 FEATURES: DESCRIPTION: • High density 4 m egabit static RAM m odule The IDT7MP4095 is a 128K x 32 static RAM module constructed on an epoxy laminate FR-4 substrate using four
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IDT7MP4095
IDT7MP4095
P4095
64-pin
ide90
DD1772fl
7MP4095
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Untitled
Abstract: No abstract text available
Text: 45E D • TCH72S0 00177b? T «TOSH TOSHIBA TRANSISTOR - 2N4403 SILICON PNP EPITAXIAL TY P E PCT PROCESS TOSHIBA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : I c E V = _ 1 0 0 n A ( M a x .) ,
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TCH72S0
00177b?
2N4403
-150mA,
2N4401
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Untitled
Abstract: No abstract text available
Text: Thai H E W L E T T WLHMPA C K A R D D igital Radio Receiver Down Converter M odules for 21.2 to 23.6 GHz Technical Data DRR1-23XX Features Description • Low N oise PHEMT MMIC Front End Amplifier This digital radio receiver module provides the RF receive and down
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DRR1-23XX
DRRI-23XX
5965-5087E
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Untitled
Abstract: No abstract text available
Text: .Technical Data F ile N u m b e r CD54/74HC299 CD54/74HCT299 1485 HARRIS SEMICOND SECTOR 27E D M3G5271 0G1777G ? HAS ^ U High-Speed CMOS Logic t 20 — ô ë î— 2 19 - S 1 0Ê 2 — 3 16 - 0 S 7 i/ o 6 — 4 17 - Q 7 1/O 4 — 5 16 - I / O 7
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CD54/74HC299
CD54/74HCT299
M3G5271
0G1777G
------l/00
36999RI
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM511001B 1,048,576-Word x 1-Bit DYNAMIC RAM : NIBBLE M ODE TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The
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MSM511001B
576-Word
MSM511001B
R1001B
D0177fiD
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3 phase ac motor speed control
Abstract: receiver 4310 fea IH08 DIODE YW 431 scr transistor marking code E3t
Text: DS83CH20 DALLAS SEMICONDUCTOR DS83CH20 Unified I/O PRODUCT SPECIFICATION Revision 1.3 Copyright 1997 by Dallas Semiconductor Corporation. All Rights Reserved. For important information regarding patents and other intellectual property rights, please refer to
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DS83CH20
2bl4130
0017bb3
DS83CH20
6550A
2bl413D
017fl4b
3 phase ac motor speed control
receiver 4310 fea
IH08 DIODE
YW 431 scr
transistor marking code E3t
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F2683
Abstract: No abstract text available
Text: That HEWLETT mi/LMPACKARD 2-16 GHz General Purpose Gallium Arsenide FET Technical Data A TF-26836 F e a tu r e s D escrip tio n • High Output Power: 18.0 dBm Typical Pj dB at 12 GHz The ATF-26836 is a high perfor mance gallium arsenide Schottkybarrier-gate field effect transistor
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TF-26836
ATF-26836
5965-8704E
44475A4
DD1771Ö
F2683
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Untitled
Abstract: No abstract text available
Text: / T u r m LTC140Q TECHNOLOGY C om plete SO-8,12-Bit 400ksps ADC w ith Shutdown F€OTUR€S DCSCMCTlOn • Complete 12-Bit ADC in SO-8 ■ Single Supply 5V or ±5V Operation ■ Sample Rate: 400ksps ■ Power Dissipation: 75mW Typ ■ 72dB S/(N + D) and -80dB THD at Nyquist
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LTC140Q
12-Bit
400ksps
12-Bit
400ksps
-80dB
400ksps,
75mWfrom
LTC1285/LTC1288
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PDF
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18-PIN
Abstract: 26-PIN ZIP20-P-400 MSM OKI
Text: O K I Semiconductor MSM5 1 1 0 0 1 B 1,048,576-Word x 1-Bit DY N A M IC R A M : N IBBLE M O D E TYPE DESCRIPTION The MSM511001B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511001B is OKI's CMOS silicon gate process technology. The
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MSM511001B
576-Word
MSM511001B
b724S40
L724240
18-PIN
26-PIN
ZIP20-P-400
MSM OKI
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PDF
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ATT2C08
Abstract: XC1700 ATT ORCA fpga "Functional replacement" ATT17128A ATT1700 ATT1700A ATT3000 ATT3020 ATT3030
Text: Preliminary Data Sheet March 1995 • » v r - = M IW . Microelectronics ATT1700A Series Serial ROM Features Description • 32K, 64K, and 128K x 1 Serial ROMs for configura tion of ATT3000 and ORCA Series FPGAs The ATT1700A Series Serial ROM family provides
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ATT1700A
ATT3000
XC1700'
20-pin
ATT1736A
ATT1736A;
ATT1765A
ATT17128A
ATT2C08
XC1700
ATT ORCA fpga
"Functional replacement"
ATT1700
ATT3020
ATT3030
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PDF
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ic 921
Abstract: Motorola C-QuAM C-QuAM RADIO RECEIVER IC FM stereo u6 ej TA8120P AMP MODU II AM STEREO CQUAM i.c.921
Text: TOSHIBA-, 90 97 24 7 TOSHIBA. ELECTRONIC 02 dF | ^0^7547 001775b 0 |~ ELECTRONIC C-QUAM A M STEREO DECODER Unit in mm TA8120P is a C-QUAM®AM stereo decoding and pilot detection system IC. It contains L+R signal detector, L-R signal detector, pilot signal detector and matrix circuit.
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001775b
TA8120P
DD17771
T-77-05-05
ic 921
Motorola C-QuAM
C-QuAM
RADIO RECEIVER IC FM stereo
u6 ej
AMP MODU II
AM STEREO CQUAM
i.c.921
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PDF
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T6420M
Abstract: TRIAC RCA T6420M T6420 Series Triac 2N5444 2N5444 2N5446 TRIAC 2N5442 T64200 T6420D T6420
Text: E SOLID STATE ~QÏ 3875081 G E SOLID STATE Triacs ’ w n o w u l u -J I n dF|3ô7SDÛ1 01E 17747 I 2N5441-2N5446, T6420 Series D File Num ber 593 TERMINAL DESIGNATIONS 40-A Silicon Triacs Features: • ■ • m 001 7 7* 4 7 MTI di/dt capability -1 0 0 A!¡is
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3fl750fll
00177M7
2N5441-2N5446,
T6420
2N5441
2N5442
2N5443
2N5444
2N5445
2N5446
T6420M
TRIAC RCA T6420M
T6420 Series
Triac 2N5444
2N5446
TRIAC 2N5442
T64200
T6420D
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