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    Samsung Semiconductor KM44V1000BLJ-7

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    SEC/99 KM44V1004DJ-6

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    Samsung Semiconductor KM44V4000CS-L6

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    Samsung Semiconductor KM44V16100AK-6

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    Samsung Semiconductor KM44V16004BK-6

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    KM44V Datasheets (149)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM44V1000D Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DJ-5 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DJ-6 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DJ-7 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DJL-6 Samsung Electronics 1M x 4-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM44V1000DJL-7 Samsung Electronics 1M x 4-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM44V1000DT-5 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DT-6 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DT-7 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DT-L-5 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DT-L-6 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DTL-6 Samsung Electronics 1M x 4-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM44V1000DT-L-7 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44V1000DTL-7 Samsung Electronics 1M x 4-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM44V1004DJ-5 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V1004DJ-7 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V1004DJ-L-5 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V1004DJ-L-6 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V1004DJ-L-7 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V1004DT-5 Samsung Electronics 1M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    ...

    KM44V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44V16000C,KM44V16100C CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consumption(Normal or Low power) are


    Original     		KM44V16000C KM44V16100C 16Mx4 400mil PDF

    3125uS

    Abstract: No abstract text available
    Text: KM44V16004B, KM44V16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal


    Original     		KM44V16004B, KM44V16104B 16Mx4 400mil 3125uS PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K


    Original     		KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C advanc4V4104C 300mil PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C1004C, KM44V1004C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		KM44C1004C, KM44V1004C 7TbM14E PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44V16100AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,


    OCR Scan     		KM44V16100AK 16Mx4 16Mx4, 512Kx8) PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM44V16000B, KM44V161OOB 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), power consum ption(Norm al or Low power) are


    OCR Scan     		KM44V16000B, KM44V161OOB 16Mx4 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consum ption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this fam ily have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


    OCR Scan     		KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C 4V4000C, PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44V16000AS CMOS D R AM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,


    OCR Scan     		KM44V16000AS 16Mx4 PDF

    44v100

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 DD1SÛ22 4bt I KM44V1000BLL CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tlUC te « ÍRC 70ns 20ns 130ns KM44V1000BLL-8 80ns 20ns 150ns KM44V1000BLL-10


    OCR Scan     		KM44V1000BLL 130ns KM44V1000BLL-8 150ns KM44V1000BLL-10 100ns 180ns KM44V1000BLL-7 cycles/128ms 20-LEAD 44v100 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44V41OOA/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION T h e S a m s u n g K M 4 4V 41 O O A /A L /A L L /A S L is a h ig h s p e e d C M O S 4 ,1 9 4 ,3 0 4 b i t x 4 D y n a m ic R a n d o m • Performance range:


    OCR Scan     		KM44V41OOA/AL/ALL/ASL 110ns 130ns 150ns KM44V41 24-LEAD 300MIL) 300MIL, D0n43b PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily of 4 .1 9 4 ,3 0 4 x 4 bit E xte n d e d D a ta O u t C M O S D R A M s. E xte n d e d D a ta O u t M ode o ffe rs high sp e e d ran d o m a c c e s s of


    OCR Scan     		KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C sh04C 300mil PDF

    KM44V1000C

    Abstract: No abstract text available
    Text: KM44V1OOOC/CL/CLL CMOS DRAM 1M x4 B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM44V1000C/CL/CLL-6 60ns 15ns 110ns KM44V1000C/CL/CLL-7 70ns 20ns 130ns KM44V1000C/CL/CLL-8 80ns 20ns 150ns > Fast Page Mode operation


    OCR Scan     		KM44V1OOOC/CL/CLL KM44V1000C/CL/CLL-6 110ns KM44V1000C/CL/CLL-7 130ns KM44V1000C/CL/CLL-8 KM44V1000C/CL/CLL 150ns 20-LEAD KM44V1 KM44V1000C PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44V1000DJ CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		KM44V1000DJ 16Mx4, 512Kx8) GD3474Ã 7Tb4142 GG3474T PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4004B, KM44C4104B KM44V4004B, KM44V4104B CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		KM44C4004B, KM44C4104B KM44V4004B, KM44V4104B PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C1004C, KM44V1004C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		KM44C1004C, KM44V1004C b41H2 Q0231Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 41 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power), a d


    OCR Scan     		KM44C1000D, KM44V1000D 1024cycles 0G37Gflc PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS DRAM KM44V16000, KM44V16100 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,


    OCR Scan     		KM44V16000, KM44V16100 16Mx4 0G2G371 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44V1004DT CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		KM44V1004DT 1b4142 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44V1000BLL CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: Ï rac tcAc tfiC 70ns 20ns 130ns KM44V1000BLL-8 80ns 20ns 150ns KM44V1000BLL-10 100ns 25ns 180ns KM44V1000BLL-7 • • • • •


    OCR Scan     		KM44V1000BLL KM44V1000BLL-7 KM44V1000BLL-8 KM44V1000BLL-10 100ns 130ns 150ns 180ns KM44V1000BLL PDF

    Oi24

    Abstract: No abstract text available
    Text: KM44V4000BK CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


    OCR Scan     		KM44V4000BK 16Mx4, 512Kx8) Oi24 PDF

    ICE ICC3

    Abstract: 44v16100
    Text: KM44V16000A, KM44V16100A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Fast Page Mode CM OS DRAM s. Fast Page M ode offers high speed random access of m em ory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access tim e(-5, -6,


    OCR Scan     		KM44V16000A, KM44V16100A ICE ICC3 44v16100 PDF

    KM44V4100BS

    Abstract: Oi24 A10QZ
    Text: KM44V4100BS CMOS DRAM ELECTR ONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


    OCR Scan     		KM44V4100BS 16Mx4, 512Kx8) b414E 7Tb4142 KM44V4100BS Oi24 A10QZ PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C1004D, KM44V1004D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 41 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power),


    OCR Scan     		KM44C1004D, KM44V1004D 100us, PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44V16004B, KM44V16104B CMOS DRAM 1 6 M x4b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 iait Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal


    OCR Scan     		KM44V16004B, KM44V16104B 16Mx4 PDF