Untitled
Abstract: No abstract text available
Text: KM44S4020C CMOS SDRAM Revision History Revision .4 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.
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Original
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KM44S4020C
PC100
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PDF
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CDC2509
Abstract: KMM375S400CT-G0 KMM375S400CT-G8 KMM375S400CT-GH KMM375S400CT-GL KM44S4020
Text: SDRAM MODULE Preliminary KMM375S400CT Revision History Revision 6 May 1998 -. Input leakage current (Inputs) I IL is updated. -. Input Capacitances are updated. Revision 7 (May 1998) -. Revised PLL Input cap. 20pF to 5pF. -. CLK Input Cap. is added by PLL Input Cap. (5pF)
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Original
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KMM375S400CT
KMM375S400CT
4Mx72
CDC2516
100Min
540Min)
150Max
CDC2509
KMM375S400CT-G0
KMM375S400CT-G8
KMM375S400CT-GH
KMM375S400CT-GL
KM44S4020
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PDF
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KM44S4020CT
Abstract: KM44S4020
Text: KM44S4020C CMOS SDRAM Revision History Revision .4 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.
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Original
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KM44S4020C
PC100
KM44S4020CT
KM44S4020
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PDF
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CDC2509
Abstract: KM44S4020 KMM375S400CT-G0 KMM375S400CT-G8 KMM375S400CT-GH KMM375S400CT-GL 0A10
Text: SDRAM MODULE Preliminary KMM375S400CT Revision History Revision 6 May 1998 -. Input leakage current (Inputs) I IL is updated. -. Input Capacitances are updated. REV. 6 May '98 Preliminary KMM375S400CT SDRAM MODULE KMM375S400CT SDRAM DIMM 4Mx72 SDRAM DIMM with PLL & Register based on 4Mx4, 4K Ref., 3.3V Synchronous DRAMs with SPD
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Original
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KMM375S400CT
KMM375S400CT
4Mx72
400mil
20-bits
24-pin
CDC2516
CDC2509
KM44S4020
KMM375S400CT-G0
KMM375S400CT-G8
KMM375S400CT-GH
KMM375S400CT-GL
0A10
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PDF
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km48s2020ct
Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks
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OCR Scan
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
KM44S16020BT
KM48S8020BT
KM416S4020BT
KM416S4021BT
KM44S160308T
KM48S8030BT
S823B
4MX16
54-PIN
u108h
KM48S2020
44s16030
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PDF
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KMM366S424BTL-G0
Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .
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OCR Scan
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
1Mx16
KM44S16020BT
KM48S8020BT
KM416S4020BT
------------------------------------16Mx4
4Mx64
KMM366S424BTL-G0
KMM466S824BT2F0
KMM466S424BT-F0
KMM466S824BT2-F0
4MX16
16MX8
KM44S4020CT
KM48S2020CT
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PDF
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Untitled
Abstract: No abstract text available
Text: SDRAM MODULE Preliminary KMM375S400CT Revision History Revision 6 May 1998 Input leakage current (Inputs) I IL is updated. Input Capacitances are updated. Revision 7 (May 1998) -. Revised PLL Input cap. 20pF to 5pF. -. CLK Input Cap. is added by PLL Input Cap. (5pF)
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OCR Scan
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KMM375S400CT
KMM375S400CT
4Mx72
M375S400CT
150Max
SN74AL
VCH162836
KM44S4020CT
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PDF
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CDC2509
Abstract: No abstract text available
Text: Prelim inary SDRAM MODULE KM M375S400CT KMM375S400CT SDRAM DIMM 4Mx72 SDRAM DIMM with PLL & Register based on 4Mx4, 4K Ref., 3.3V Synchronous DRAMs with SPD G E N E R A L DESCRIPTION FEATURE The Samsung KMM375S400CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM375S400CT
M375S400CT
4Mx72
400mil
20-bits
24-pin
168-pin
CDC2509
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PDF
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Untitled
Abstract: No abstract text available
Text: KM44S4020C CMOS SDRAM Revision History Revision ,4 November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. REV. 4 Nov. '97 ELECTRONICS CMOS SDRAM
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OCR Scan
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KM44S4020C
44S4020C
10/AP
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PDF
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KM44S4020CTG
Abstract: KM44S4020C
Text: KM44S4020C CMOS SDRAM 2M x 4BH x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM44S4020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 2,097,152 words by 4 bits, fabricated with SAMSUNG'S high performance CMOS technol
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OCR Scan
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KM44S4020C
KM44S4020C
KM44S4020CTG
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PDF
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CDC2509
Abstract: No abstract text available
Text: Preliminary KMM378S400CT SDRAM MODULE KMM378S400CT SDRAM DIMM 4M x72 SDRAM DIMM with PLL & R egister based on 4M x4, 4K Ref. 3.3V S ynchronous DRAM s FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM378S400CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM378S400CT
KMM378S400CT
400mil
24-pin
200-pin
200pin
CDC2509
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PDF
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