JIS F07
Abstract: JIS-F07 TODX2203
Text: TOSHIBA TOSLINK TOPX2203 155M Preliminary Fiber Optic Transceiving Module for High-Speed Data Transmission Features • Data rate: up to 155 Mb/s (NRZ code) • Transmission distance: up to 10m at 155 Mb/s with APF up to 20m at 125 Mb/s with APF • P-ECL interface
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OPX2203
ODX2202
JIS F07
JIS-F07
TODX2203
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Untitled
Abstract: No abstract text available
Text: HI2301, CXD2301 $ HftfiSSS 8-Bit 30 MSPS Video A/D Converter with Built-In Amplifier/Clamp February 1996 Features Description • ± 1/2 L5B DL The HI2301, CXD2301 is an 8-bit CMOS A/D converter for video applications with built-in amplifier/sync-clamp circuits.
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HI2301,
CXD2301
CXD2301
120mW
PAR90
43G2271
0Gb540fl
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Untitled
Abstract: No abstract text available
Text: £ = 7 S G S -T H O M S O N TD A 1910 10W AUDIO AMPLIFIER WITH MUTING DESCRIPTION The TDA 1910 is a monolithic integrated circuit in MULTIWATT package, intended for use in Hi-Fi audio power applications, as high quality TV sets. The TDA 1910 meets the DIN 45500 d = 0.5%
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b4327
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29201 5.0BU
Abstract: MIC2920A MIC29202 29202BT 2N2222 t0 39
Text: MIC2920A/29201/29202/29204 400mA Low-Dropout Voltage Regulator General Description Features High output voltage accuracy Guaranteed 400mA output Low quiescent current Low dropout voltage Extremely tight load and line regulation Very low temperature coefficient
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MIC2920A/29201/29202/29204
400mA
MIC2920A
370mV
250mA)
theMIC2920A
MIC2920
MIC2920A-xx
MIC29201
29201 5.0BU
MIC29202
29202BT
2N2222 t0 39
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Untitled
Abstract: No abstract text available
Text: 19 0891: Rev 1:0/93 y k i y j x i y k i CMOS High Speed 8 B it A /D Converter w ith Reference and Tïack/H oid Function . Features The MAX150/MX7820 is a high speed, microprocessor compatible, 8 bit analog to digital converter which uses a half-flash technique to achieve a conversion
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150/M
MAX150/MX7820
100mV//iS.
MAX150
7bb51
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tda 10W amplifier tone volume control
Abstract: tda1110 Vsb24V TDA1910 tda 2200 TDA191 TDA 820 m 24v AUDIO AMPLIFIER CIRCUIT DIAGRAM tda111 simple 19v power supply
Text: Æ * T 7M b S G S -T H O M S O N TD A 1910 K iö D l^ © [ it [ i© ir [ ^ Q R ilQ © i 10W AUDIO AMPLIFIER WITH MUTING DESCRIPTION The TDA 1910 is a monolithic integrated circuit in MULTIWATT package, intended for use in Hi-Fi audio power applications, as high quality TV sets.
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TDA1910
tda 10W amplifier tone volume control
tda1110
Vsb24V
TDA1910
tda 2200
TDA191
TDA 820 m
24v AUDIO AMPLIFIER CIRCUIT DIAGRAM
tda111
simple 19v power supply
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Katalog CEMI
Abstract: uca64121 UCA6400 UL1405 UL1211 UCY7400N UL1490N elektor SESCOSEM ul1402l
Text: W iadom osci ogólne WSTIJP W y d aw n ic tw a P rz e m y s lu M aszynow ego W EM A p rz e k a zujq u z y tk o w n ik o m k a ta lo g b ra n z o w y pt. P rzy rz q d y p ó lp rz e w o d n ik o w e , z a w ie ra j^ c y d o k lad n e in fo rm a c je te c h nicze dotycz^ce p rz y rz q d ó w p ó lp rze w o d n ik o w y c h p ro d u k o w a n y ch w P o lsce n a sk al$ przem y slo w ^ .
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UL1611N
1611N
UL16HN
UCC-12V
PN-73/E-04550.
Katalog CEMI
uca64121
UCA6400
UL1405
UL1211
UCY7400N
UL1490N
elektor
SESCOSEM
ul1402l
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1000CLP
Abstract: No abstract text available
Text: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C1000CL
KM41C1000CL
576x1
KM41C1000CL-6
KM41C1000CL-7
KM41inued)
20-LEAD
1000CLP
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ka2183
Abstract: No abstract text available
Text: KA2182/KA2183 LINEAR INTEGRATED CIRCUIT REMOTE CONTROL PREAMPLIFIER The KA2182/KA2183 are silicon monolithic integrated circuit designed for a remote control preamplifier of infrared signals. These devices have features of low power, high sensitivity and wide supply voltage.
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KA2182/KA2183
KA2182)
KA2183)
40KHz)
KA2182
KA2183
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Untitled
Abstract: No abstract text available
Text: NRE-SN Series Non-Polar Aluminum Electrolytic Capacitors LEADED LOW PROFILE, SUB-MINIATURE, RADIAL LEADS, NON-POLAR ALUMINUM ELECTROLYTIC FEATURES • BI-POLAR • 7mm H E IG H T / LOW PROFILE CHARACTERISTICS Rated Voltage Range Rated Capacitance Range Operating Temperature Range
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50Vdc
47fiF
120Hz/20
120Hz)
120Hz
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km44c256c
Abstract: KM44C256CL-6 KM44C256CL-7 KM44C256CL-8 CP172 KM44C256CLP-7 KM44C256CLP8
Text: SAMSUNG ELECTRONICS INC b?E » • ?cìb4]i42 DD15H77 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C256CL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its
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KM44C256CL_
DD15477
256Kx4
KM44C256CL-6
110ns
KM44C256CL-7
130ns
KM44C256CL-8
150ns
200pA
km44c256c
CP172
KM44C256CLP-7
KM44C256CLP8
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AN6337
Abstract: No abstract text available
Text: t r u ff ile AN6337, AN6337S AN6337, AN6337S VTR n ± W k& iS ^ & S iI]ï& /V T R Playback Video Signal Processing Circuits • m AN 63 37 s Unit : mm AN6337, AN6337S ±, VTR » •c -r. ■ 4« * • AN6337, AN6337S l± , FM QLm & %.<?>&.& LXn i r - t i v > x -,9
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AN6337,
AN6337S
AN6337S
22-Lead
AN6337
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM44C256CL is a CMOS high speed 2 6 2 ,1 4 4 x 4 D ynam ic Random A ccess M em ory. Its de sig n is o p tim ized fo r high pe rform ance ap p lica tio n s
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KM44C256CL
256Kx4
KM44C256CL
KM44C256CL-6
110ns
130ns
KM44C256CL-8
KM44C256CL-7
150ns
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Untitled
Abstract: No abstract text available
Text: SA M S UN G E L E C T R O N I C S INC b?E D • 7^4142 KM44C4000L OOlblbfl Gñl ■ SMGK CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4000L is a CMOS high speed 4,194,304 x 4 Dynamic Random Access Memory. Its de
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KM44C4000L
KM44C4000L
110ns
KM44C4000L-7
130ns
KM44C4000L-8
KM44C4000L-6
150ns
47fiF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • T'ibmMS ÜÜ1S7E5 ST4 ■ KM44C1002B CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory, Its de
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KM44C1002B
KM44C1002B
576x4
KM44C1002B-6
110ns
KM44C1002B-,
130ns
KM44C1002B-8
150ns
20-LEAD
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NTE134
Abstract: No abstract text available
Text: LINEAR INTEGRATED CIRCUITS NTE1347 Front View 16-Lead SIP, See Diag. 232 Module, Hybrid, Dual, Audio Power Amp, 20W/Chp 2 Power Supplies Req’d, VCC - ±32V Rt Ch taput B NTE1356 {Front View) 16-Lead SIP, See Diag. 232 Darlington Power Pack, 25W, 2 Ch,
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NTE1347
16-Lead
NTE1356
180pF
i80pF
10-Lead
NTE1365
NTE1369
11-Lead
NTE134
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lm10blh
Abstract: Precision Voltage Regulators LM10 lm10 sensor PCT-39
Text: r r TECHNOLOGY u n m Guaranteed Operation at + 1 .2V The LM10 combines a precision reference, a reference buffer amplifier and an independent, high quality op amp on a single chip. The device is capable of operation from a single supply as low as 1.1V, from dual supplies up to
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270/iA
400mV
lm10blh
Precision Voltage Regulators
LM10
lm10 sensor
PCT-39
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Untitled
Abstract: No abstract text available
Text: 5V, 100mA Low Dropout Linear Regulator with WATCHDOG, RESET, & WAKE UP Description The CS8151 is a precision 5V, 100mA micro-power voltage regulator w ith very low quiescent current 400pA typical at 200pA load . The 5V output is accurate w ithin ±2% and supplies
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100mA
CS8151
100mA
400pA
200pA
400mV.
CS8151
CS8151YT7
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Untitled
Abstract: No abstract text available
Text: LOW VOLTAGE AUDIO PO W E R AM PLIFIER NJM386 T h e N JM 3 8 6 is a p o w e r a m p lifie r d e sig n e d fo r u se in low vo lta g e c o n su m e r a p p lic atio n s. T h e gain is in te rn a lly s e t to 20 to k e e p e x te rn a l p a rt c o u n t lo w , b u t th e a d d itio n o f an e x te rn a l re s isto r a n d c a p a c ito r b e tw e e n pins 1 a n d 8 will increase
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NJM386
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Untitled
Abstract: No abstract text available
Text: December 1994 PRELIMINARY flfc. M icro Linear ^ ML4875 Low Voltage Boost Regulator with Shutdown GENERAL DESCRIPTION FEATURES The ML4875 is a boost regulator designed for DC to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCMOS process technology, internal
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ML4875
ML4875
synchronous45
ML4875CS-T
ML4875CS-3
ML4875CS-5
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LTI431
Abstract: Lt14311 1431 transistor
Text: * > 9? r _ r u _ n LT1431 m TECHNOLOGY Programmable Reference KRTURCS DCSCRIPTIOil • Guaranteed 0.4% Initial Voltage Tolerance ■ 0.1i2 Typical Dynamic Output Impedance ■ Fast Turn-On The LT1431 is an adjustable shunt voltage regulator with
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LT1431
LT1431
100mA
100mA
LT/GP1292
LTI431
Lt14311
1431 transistor
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Digital Pulse Counter Two Digit
Abstract: AN6354 1440Hz
Text: t r i f a AN6354 l e AN6354 V T R 2 H /4 H /6 H 2 H /4 H /6 H S « j¥ IJ J ® » /V T R A u to m a tic D is c r im in a to r • m 9 A N 6354 U , V T R <r> 2 H /4 H /6 H i ft to ■ * at • A N 6354 l i , F G # |0 I & F G t> * 7 's 9 « ' 0 B •
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AN6354
AN6354
10/iF
Digital Pulse Counter Two Digit
1440Hz
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Untitled
Abstract: No abstract text available
Text: KM41C16000L CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: KM41C16000L-6 • • • • • • • • • • Í rac tcAc I rc 60ns 15ns 110ns KM41C16000L-7 70ns 20ns 130ns KM41C16000L-8 80ns
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KM41C16000L
KM41C16000L-6
110ns
130ns
KM41C16000L-8
KM41C16000L-7
150ns
cycles/256ms
KM41C16000L
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C1000CSL
KM41C1000CSL
576x1
KM41C1000CSL-6
110ns
KM41C1000CSL-7
130ns
KM41C1000CSL-8
150ns
20-LEAD
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