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    IXGH12N100A Search Results

    IXGH12N100A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH12N100A Unknown Low VCE(sat) High Speed IGBT Original PDF
    IXGH12N100AU1 IXYS 1000V high voltage IGBT Original PDF

    IXGH12N100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12N100A

    Abstract: 12n100 IXGH12N100 IXGH12N100A
    Text: Low VCE sat IGBT High Speed IGBT Symbol Test Conditions VCES IXGH 12N100 IXGH 12N100A Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C


    Original     		PDF 12N100 12N100A O-247AD Mounti00 IXGH12N100/A IXGH12N100U/AU1 12N100A 12n100 IXGH12N100 IXGH12N100A

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    IXGD32N60B-5X

    Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B
    Text: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43


    Original     		PDF IXGD28N30-43 IXGD40N30-5X IXGD12N60B-3X IXGD31N60-4X IXGD41N60-5X IXGD60N60-7Y IXGD200N60B-9X IXGD2N100-1M IXGD4N100-1T IXGD8N100-2L IXGD32N60B-5X ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B

    Untitled

    Abstract: No abstract text available
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original     		PDF

    IXGH12N100AU1

    Abstract: IXGH12N100U1
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1 IXGH12N100AU1 IXGH12N100U1

    12n100

    Abstract: No abstract text available
    Text: Low VCE sat IGBT High Speed IGBT Symbol Test Conditions VCES IXGH 12N100 IXGH 12N100A Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C


    Original     		PDF 12N100 12N100A O-247AD O-247 IXGH12N100/A IXGH12N100U/AU1

    Untitled

    Abstract: No abstract text available
    Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 12N100U1 12N100AU1 O-247AD IXGH12N100U1 IXGH12N100AU1

    4453 smd

    Abstract: to247 f tab 4453
    Text: v Low c E s 3 t IGBT ^ High Speed IGBT 1000 V 24 A IXGH 12 N10O IXGH12N100A 1000 V 24 A . Symbol Test Conditions V * CES T, = 25°C to 150°C 1000 V V C6R ^ = 25°C to 150°C; RGE = 1 Mfi 1000 V v GES Continuous ±20 V vt g e m Transient ±30 V ^C25 T c = 25°C


    OCR Scan     		PDF IXGH12N100A O-247 TQ-247SMD O-247AD 4453 smd to247 f tab 4453

    IXGD40N60A

    Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60
    Text: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60


    OCR Scan     		PDF IXGD28N30 IXGD40N30 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60 IXGD60N60 IXGD200N60 IXGD40N60A 1XGH10N60 xgh10n60a IXGH40N60 IXGH50N60A 1X57 IXGH60N60

    T0247AC

    Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m


    OCR Scan     		PDF B03M0WH0CTb npe06pa30Baiennx paUP212 T0220AB BUP213 BUP313 T0218AB BUP313D T0247AC IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212

    IGBT 200A 1200V

    Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D


    OCR Scan     		PDF bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40

    Untitled

    Abstract: No abstract text available
    Text: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C


    OCR Scan     		PDF 12N100U1 12N100AU1 O-247 IXGH12N100U1 IXGH12N100AU1

    ixgr32n60cd1

    Abstract: IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60
    Text: Discrete IGBTs with FRED Diode U r u G series *C<25> min V A v T0-220(P CSH5A.T) max V typ ne PLUS247 (X) TO-268(T) ISOPLUS247™(R) TO-247(H) T0-204(M) TO-264(K) SOT-227B(N) J0* TO-263(A) ► NetV LOW SATURATION VOLTAGE TYPES 600 1000 40 2.0 200 IXGH28N60D1


    OCR Scan     		PDF O-268 ISOPLUS247TM OT-227B T0-220 PLUS247TM O-263 O-247 T0-204 O-264 IXGA12N100U1 ixgr32n60cd1 IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60

    IXGH24N50B

    Abstract: IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100
    Text: nixYS Insulated Gate Bipolar Transistors IGBT-Chips v Type •• c «V- Chip typ - tn » Chip s o b dbnemtons Source bm d wire »C Tj„ = l&O'C TO Equivalent device datasheet Dim. out­ line V V A pF IXGD28N30-43 IXGD40N30-5X 300 2.1 1.5 20 20 1500 2500


    OCR Scan     		PDF IXGD28N30-43 IXGD40N30-5X IXGD12N60B-33 IXGD31N60-4X IXGD41N60-5X IXGD60N60-7X IXGD200N60-9X IXGD8N100-2L IXGD12N100-33 IXGD17N100-4T IXGH24N50B IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100

    D 819

    Abstract: No abstract text available
    Text: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V


    OCR Scan     		PDF 12N100U1 12N100AU1 24SBSC T0-247 D 819

    1-20Q

    Abstract: AD 483 D 819
    Text: □IXYS V CES Low VCE sat IGBT High Speed IGBT IXGH 12 N100 IXGH 12N100A Maximum Ratings Sym bol Test C onditions V CES Td = 25°C to 150°C 1000 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 1000 V v GES v GEM Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C


    OCR Scan     		PDF N100A 247AD 1-20Q AD 483 D 819

    Untitled

    Abstract: No abstract text available
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C u n o B b ie T p a H 3 M C T o p b i IG B T IX Y S C #epa npMMeHeHMa: b n po M biw ne rn-ib ix ycTaHOBKax M a n o fi m cpeflHeM m o w ,h o c tm , b npMBOAHbix CMCTeMax, b yd p o M C T B a x ynpaB ^eH M a, b 6 ecn p0B 0A H bix 6 no K ax riMTaHMA Arm


    OCR Scan     		PDF 3S88SSS588S8888gÂ

    Ixgr50n60

    Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C
    Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces *C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J* ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)


    OCR Scan     		PDF O-263 PLUS247TM O-247 IXGH28N60B IXGH31N60 O-268AA O-204 lSOPLUS247TM OT-227B IXGA20N120 Ixgr50n60 IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C

    Untitled

    Abstract: No abstract text available
    Text: IGBT with Diode CES IXGH12N100U1 IXGH 12N100AU1 L O W V CE S« | High Speed OC Jj K g 1000 V 1000 V Test Conditions V VCGR Tj Tj v OES VGEM Continuous Transient ^C25 ^CM Tc =25=C Tc =90°C T c = 25° C, 1 ms SSOA (RBSOA VG6 = 1 5 V ,T VJ= 125° C, RG= 1 5 0 Q


    OCR Scan     		PDF IXGH12N100U1 12N100AU1 O-247