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    IRF323 Search Results

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    IRF323 Price and Stock

    Rochester Electronics LLC IRF323

    N-CHANNEL HERMETIC MOS HEXFET
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    DigiKey IRF323 Bulk 433
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    Infineon Technologies AG IRF323

    - Bulk (Alt: IRF323)
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    Avnet Americas IRF323 Bulk 4 Weeks 521
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    International Rectifier IRF323

    IRF323 - N-Channel HERMETIC MOS HEXFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRF323 901 1
    • 1 $0.7
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    • 100 $0.658
    • 1000 $0.595
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    IRF323 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF323 Intersil 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 ?, N-Channel Power MOSFETs Original PDF
    IRF323 Fairchild Semiconductor N-Channel Power MOSFETs, 3.0 A, 350-400 V Scan PDF
    IRF323 FCI POWER MOSFETs Scan PDF
    IRF323 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF323 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. Scan PDF
    IRF323 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF323 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    IRF323 Motorola European Master Selection Guide 1986 Scan PDF
    IRF323 Unknown FET Data Book Scan PDF
    IRF323 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF323 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF323 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF323 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF323 Samsung Electronics N-CHANNEL POWER MOSFETS Scan PDF
    IRF323 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    IRF323R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRF323 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF3205 application

    Abstract: irf3205 IRF3205 equivalent AN-994 IRF3205L OTTO T2
    Text: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A†


    Original     		PDF 1304B IRF3205S/L IRF32305S) IRF3205L) IRF3205 application irf3205 IRF3205 equivalent AN-994 IRF3205L OTTO T2

    Untitled

    Abstract: No abstract text available
    Text: IRF323 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A)2.8 I(DM) Max. (A) Pulsed I(D)1.8 @Temp (øC)100 IDM Max (@25øC Amb)11 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF323

    ifr320

    Abstract: No abstract text available
    Text: IRF320, IRF321 IRF322, IRF323 S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    Original     		PDF IRF320, IRF321 IRF322, IRF323 TA17404. ifr320

    ifr320

    Abstract: IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202
    Text: IRF320, IRF321, IRF322, IRF323 Semiconductor 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF320, IRF321, IRF322, IRF323 ifr320 IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202

    AN-994

    Abstract: IRF3205 IRF3205L
    Text: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A†


    Original     		PDF 1304B IRF3205S/L IRF32305S) IRF3205L) AN-994 IRF3205 IRF3205L

    IRF3205 equivalent

    Abstract: IRF3205 application datasheet for IRF3205 IRF3205 ups IRF3205 irf3205 DRIVER irf3205 mosfet transistor marking F53 AN-994 IRF3205L
    Text: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A†


    Original     		PDF 1304B IRF3205S/L IRF32305S) IRF3205L) IRF3205 equivalent IRF3205 application datasheet for IRF3205 IRF3205 ups IRF3205 irf3205 DRIVER irf3205 mosfet transistor marking F53 AN-994 IRF3205L

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    IRF3205 application

    Abstract: IRF3205 IR IRF3205S
    Text: PD - 9.1304B International IQ R Rectifier IRF3205S/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF32305S • Low-profile through-hole (IRF3205L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V


    OCR Scan     		PDF IRF32305S) IRF3205L) IRF3205 application IRF3205 IR IRF3205S

    IFR320

    Abstract: No abstract text available
    Text: w vys S IRF320, IRF321, IRF322, IRF323 Semiconductor y y 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF320, IRF321, IRF322, IRF323 RF322, IFR320

    IFR320

    Abstract: IRF322 IRF320
    Text: IRF320, IRF321 IRF322, IRF323 HARRIS S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8 A and 3.3A, 350V and 400V • High Input Im pedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF320, IRF321 IRF322, IRF323 TA17404. IRF321, RF322, IFR320 IRF322 IRF320

    IRF322

    Abstract: IRF320 250M IRF321 IRF323
    Text: Standard Power MOSFETs- IRF320, IRF321, IRF322, IRF323 File Number 1569 Power MOS Field-Effect Transistors N-CHANNEL EN HANCEM ENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.5A and 3.0A, 350V-400V


    OCR Scan     		PDF IRF320, IRF321, IRF322, IRF323 50V-400V IRF322 IRF323 75BVQSS IRF320 250M IRF321

    9314h

    Abstract: International Rectifier MOSFET 443 K 3911 1RF322
    Text: HE 0 I Mfl5SMS2 QOQTlEâ 1 | Data She£t No. PO-9.314H T - ¿ 7 -^ INTERNATIONAL RECTIFIER INTERNATIONAL- RECTIFIER IOR REPETITIVE AVALANCHE AND dv/dt RATED' IR F320 HEXFET TRANSISTORS IRF321 1RF322 IRF323 N-CHANNEL Product Summary 400 Volt, 1.8 Ohm HEXFET


    OCR Scan     		PDF IRF321 1RF322 IRF323 T0-204AA G-111 IRF320, IRF321, IRF322, IRF323 T-39-11 9314h International Rectifier MOSFET 443 K 3911

    IRF320

    Abstract: No abstract text available
    Text: IRF320, IRF321 IRF322, IRF323 33 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Package F e a tu re s T O -2 0 4 A A • 2.8A and 3.3A , 3 5 0 V - 4 0 0V BOTTOM VIEW • r D S o n = 1 - 8 f î a n d 2 .5 C I • S O A is P o w er-D issip atio n Lim ited


    OCR Scan     		PDF IRF320, IRF322, IRF323 IRF320

    IRF3205 application

    Abstract: IRF32305S marking za mosfet MOSFET MARKING ZA
    Text: PD - 9.1304B International IQ R Rectifier IRF3205S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V R d s (oh) = 0.008Q


    OCR Scan     		PDF IRF32305S) IRF3205L) 1304B IRF3205S/L IRF3205 application IRF32305S marking za mosfet MOSFET MARKING ZA

    DATA SHEET IRF331

    Abstract: IRF540 IRF44 VN2410M IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH
    Text: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I ' < O Ò ' ' ' lO ' ' ' ' ' I o o r i mm | ioom m I I j j CO 00 CO CO j j ' L -^ ^ l I I c\i CM i


    OCR Scan     		PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D DATA SHEET IRF331 IRF540 IRF44 VN2410M IVN6200CNH

    irf840

    Abstract: equivalent irf840 irf840 equivalent irf840 rf MTM3N55 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
    Text: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j


    OCR Scan     		PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D irf840 equivalent irf840 irf840 equivalent irf840 rf MTM3N55

    1RF321

    Abstract: IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452
    Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350


    OCR Scan     		PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 1RF321 IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452

    irf250

    Abstract: IRF133 international rectifier 2sk135 equivalent HPWR 6501 IRF350 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504
    Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPW R-6502 HPW R-6503 HPW R-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO -3 TO -3 TO -3 TO -3 100 120 140 160 180 200


    OCR Scan     		PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf250 IRF133 international rectifier 2sk135 equivalent HPWR 6501 IRF350 2SK133

    irf150

    Abstract: VN64GA 2SK134 2SK132 2SK133 HPWR-6502 HPWR-6503 HPWR-6504 IRF122 IRF223
    Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPW R-6501 H P W R -6502 H P W R -6503 H P W R -6504 BVd s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 T O -3 T O -3 T O -3 T O -3 100 120


    OCR Scan     		PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 irf150 VN64GA 2SK134 2SK133 IRF223

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    5109d

    Abstract: No abstract text available
    Text: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR Ifl DE I 7 ^ 4 1 4 5 98D 0 51 09 TNO 0 0 0 5 1 0 e] 3 D f-rj?-// N-CHANNEL POWER MOSFETS IRF320/321/322/323 FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF 000510e IRF320/321/322/323 IRF321 IRF322 IRF323 00GS435 5109d

    BUZ24

    Abstract: IRF540 2sk135 equivalent 2SJ49 2SJ54 HPWR 6501 2SK132 2SK133 VN67AF HPWR-6503
    Text: MOSPOWER Cross Reference List MOSPOWER Cross Reference List HEWLETT-PACKARD Industry Part No. HPWR-6501 HPWR-6502 HPWR-6503 HPWR-6504 BV d s S Volts rDS(on) (Ohms) Package 450 400 450 400 0.85 0.74 1.0 1.0 TO-3 TO -3 TO-3 TO-3 100 120 140 160 180 200 160


    OCR Scan     		PDF PWR-6501 IRF441 HPWR-6502 IRF340 HPWR-6503 HPWR-6504 VN4001A 2SK132 IRF122 BUZ24 IRF540 2sk135 equivalent 2SJ49 2SJ54 HPWR 6501 2SK133 VN67AF

    MTM2N85

    Abstract: IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH IVN6200CNM VN0401D VN0801D
    Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o P fi c | I O O I I I P I I I | I I j j CO00 COCO j j ' I o o r i mm | ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i


    OCR Scan     		PDF IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D MTM2N85 IVN6200CNH IVN6200CNM

    irf420

    Abstract: IRF823 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A
    Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350


    OCR Scan     		PDF IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 irf420 IRF823 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A