Untitled
Abstract: No abstract text available
Text: IMS1800M CMOS High Performance 256K x 1 Static RAM MIL-STD-883C mos Advance Information DESCRIPTION FEATURES • INMOS' Very High Speed CMOS • Advanced Process -1.2 Micron Design Rules • 256K x 1 Bit Organization • 30, 35 and 45 ns Address Access Times
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IMS1800M
MIL-STD-883C
300-mil
256Kx1
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inmos static ram
Abstract: IMS1800M
Text: IMS1800M CMOS High Performance 256K x 1 Static RAM MIL-STD-883C Advance Information mos DESCRIPTION FEATURES • INMOS' Very High Speed CMOS • Advanced Process -1 .2 Micron Design Rules • 256K x 1 Bit Organization • 30, 35 and 45 ns Address Access Times
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IMS1800M
MIL-STD-883C
300-mil
256Kx1
inmos static ram
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Untitled
Abstract: No abstract text available
Text: •■■■ . ■"■■■■■■ IMS1800M CMOS High Performance 256K x 1 Static RAM MIL-STD-883C IH IH HH SSSSSSSS "■■■■" ] m K S A dvance Information DESCRIPTION FEATURES • INMOS' Very High Speed CMOS > Advanced Process -1.2 Micron Design Rules
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IMS1800M
MIL-STD-883C
300-mil
256Kx1
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MKB6116
Abstract: MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420 MK48Z02BU
Text: SELECTION GUIDE ZEROPOW ERS ORGANISATION DESCRIPTION PART NUMBER ICCma SPEEDns ACTIVE TTL mA@ns STBY CMOS STBY VCC TEMP RANGE PACKAGE -2 K X 8 MK48Z02 120,150,200,250 90 3 1 5V + 10 -5% 0 to + 70°C P DIP 24 -2 K X 8 UL-CERTIFIED MK48Z02BU 120,150,200,250
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32KX8
MK48Z32
MK48Z30A
MK48Z30
MK48Z19BU
MK46Z19
MK48Z09BU
MK48Z02
MK48Z02BU
MK48Z12
MKB6116
MKB4501
IMS1630
RAM MK6116
MK48Z18BU
IMS1420
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K4505
Abstract: 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80
Text: ALPHANUMERICAL INDEX unless otherwise specified all Static RAMs listed are produced in CMOS technology Part Nuraöer Organization 4Kx1 IMS1203 ( 4Kx1 IMS1203M , 1Kx4 IMS1223 1Kx4 IMS1223M ' 16Kx1 IMS1400M 16Kx1 IMS1403 ' IMS1403M/LM f 16Kx1 IM S1420M A 4Kx4
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IMS1203
IMS1203M
IMS1223
IMS1223M
16Kx1
IMS1400M
IMS1403
IMS1403M/LM
K4505
1601l
4Kx4 SRAM
MK48T87B
Z30A
SRAM
2kx8 sram
IMS1630
256KX1
MK41S80
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lt 6655
Abstract: No abstract text available
Text: IMS1800 CMOS High Performance 256K x 1 Static RAM I mos FEATURES DESCRIPTION • • • • • • • • • The INMOS IMS1800 is a high performance 256Kx1 CMOS Static RAM. The IMS1800 provides maximum density and speed enhancements with the additional
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IMS1800
300-mil
256Kx1
lt 6655
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IMS1800E-25
Abstract: IMS1800M IMS1800P-25 IMS1800S-25 IMS1800W-25
Text: IMS1800 CMOS High Performance 256K x 1 Static RAM i irnos DESCRIPTION FEATURES IN MOS' Very High Speed CMOS Advanced Process -1 .2 Micron Design Rules 256K x 1 Bit Organization 2 5 .3 0 , 35 and 45 ns Address Access Times 2 5 .3 0 , 35 and 45 ns C hip Enable Access Times
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IMS1800
300-mil
256Kx1
cycle76
IMS1800
IMS1800E-25
IMS1800M
IMS1800P-25
IMS1800S-25
IMS1800W-25
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Untitled
Abstract: No abstract text available
Text: IMS1800 CMOS High Performance 256K x 1 Static RAM inmos DESCRIPTION FEATURES • • • • • • • • • INMOS' Very High Speed CMOS Advanced Process -1 .2 Micron Design Rules 256K x 1 Bit Organization 2 5 ,3 0 ,3 5 and 45 ns Address Access Times 25, 30, 35 and 45 ns C hip Enable Access Times
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IMS1800
300-m
256Kx1
S1800
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