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    IFS75B12N3E4 Price and Stock

    Infineon Technologies AG IFS75B12N3E4B31BOSA1

    IGBT MOD 1200V 150A 385W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IFS75B12N3E4B31BOSA1 Tray 10
    • 1 -
    • 10 $186.369
    • 100 $186.369
    • 1000 $186.369
    • 10000 $186.369
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    Rochester Electronics IFS75B12N3E4B31BOSA1 16 1
    • 1 $202.33
    • 10 $202.33
    • 100 $190.19
    • 1000 $171.98
    • 10000 $171.98
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    Infineon Technologies AG IFS75B12N3E4B31BOS

    MIPAQ Base Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode and Current Sense Shunt 1200V Tray - Trays (Alt: IFS75B12N3E4B31BOS)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IFS75B12N3E4B31BOS Tray 16 Weeks 10
    • 1 -
    • 10 $215.047
    • 100 $215.047
    • 1000 $215.047
    • 10000 $215.047
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    Infineon Technologies AG IFS75B12N3E4_B31

    IGBT Modules MIPAQ BASE 1200V 75A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IFS75B12N3E4_B31
    • 1 $171.5
    • 10 $160.63
    • 100 $152.18
    • 1000 $152.18
    • 10000 $152.18
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    Infineon Technologies AG IFS75B12N3E4B32BOSA1

    LOW POWER ECONO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IFS75B12N3E4B32BOSA1 160 1
    • 1 $104.66
    • 10 $104.66
    • 100 $98.38
    • 1000 $88.96
    • 10000 $88.96
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    IFS75B12N3E4 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IFS75B12N3E4B31BOSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - MOD IGBT LOW PWR ECONO Original PDF

    IFS75B12N3E4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules IFS75B12N3E4_B39 MIPAQ base模块采用第四代沟槽栅/场终止IGBT和第四代发射机控制二极管带有电流采样电阻


    Original     		PDF IFS75B12N3E4 BarcodeCode128 2013-0mayprovideapplicationnotes.

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules IFS75B12N3E4_B31  


    Original     		PDF IFS75B12N3E4

    LTC4098-3.6

    Abstract: A20-LCD15.6 SXA-01GW-P0.6
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current


    Original     		PDF IFS75B12N3E4 428654F4 D3265 ECFC24 B32DC CD3289 ECFC26 B32DC6 C36B3 1231423567896AB LTC4098-3.6 A20-LCD15.6 SXA-01GW-P0.6

    LTC4098-3.6

    Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense


    Original     		PDF IFS75B12N3E4 428654F4 BCFC24 E32DC BCFC26 E32DC6 6734F 9C46E4 327C53 1231423567896AB LTC4098-3.6 se666 k3332 edt0145.6 SEH-01T-P0.6

    A7560

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules IFS75B12N3E4_B39 内蔵 and電流センス用シャント抵抗


    Original     		PDF IFS75B12N3E4 BarcodeCode128 A7560

    AL6G

    Abstract: No abstract text available
    Text: Technische Information / technical information IFS75B12N3E4_B39 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current


    Original     		PDF IFS75B12N3E4 AL6G

    ifs75b12n3e4_b32

    Abstract: No abstract text available
    Text: Technische Information / technical information IFS75B12N3E4_B32 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense


    Original     		PDF IFS75B12N3E4 ifs75b12n3e4_b32

    474F3

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt


    Original     		PDF IFS75B12N3E4 E1322 FF326DC FC26E1 2313F D36134 1231423567896AB 54F36C 4112CD3567896BE 474F3

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules IFS75B12N3E4_B32 Strommesswiderstand


    Original     		PDF IFS75B12N3E4

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules IFS75B12N3E4_B39 Strommesswiderstand


    Original     		PDF IFS75B12N3E4

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules IFS75B12N3E4_B31  


    Original     		PDF IFS75B12N3E4

    IFS75B12N3E4_B31

    Abstract: No abstract text available
    Text: Technische Information / technical information IFS75B12N3E4_B31 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt


    Original     		PDF IFS75B12N3E4 IFS75B12N3E4_B31

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules IFS75B12N3E4_B32 MIPAQ base模块采用第四代沟槽栅/场终止IGBT和第四代发射集控制二极管带有电流采样电阻


    Original     		PDF IFS75B12N3E4

    Untitled

    Abstract: No abstract text available
    Text: IGC70T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:


    Original     		PDF IGC70T120T8RM L7673U, L7673O,

    IFS75B12N3E4

    Abstract: No abstract text available
    Text: IGC70T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:


    Original     		PDF IGC70T120T8RM L7673U, L7673O, IFS75B12N3E4