IFS75B12N3E4_B31 Search Results

IFS75B12N3E4_B31 Price and Stock

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Infineon Technologies AG IFS75B12N3E4B31BOSA1 IGBT MOD 1200V 150A 385W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IFS75B12N3E4B31BOSA1	Tray			10	1 - 10 $149.488 100 $149.488 1000 $149.488 10000 $149.488	Buy Now
Rochester Electronics	IFS75B12N3E4B31BOSA1		16		1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	IFS75B12N3E4B31BOSA1			16 Weeks	10	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IFS75B12N3E4B31BOS MIPAQ Base Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode and Current Sense Shunt 1200V Tray - Trays (Alt: IFS75B12N3E4B31BOS)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IFS75B12N3E4B31BOS	Tray		15 Weeks	10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IFS75B12N3E4_B31 IGBT Modules MIPAQ BASE 1200V 75A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IFS75B12N3E4_B31					1 $171.56 10 $149.48 100 $149.48 1000 $149.48 10000 $149.48	Get Quote

IFS75B12N3E4_B31 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IFS75B12N3E4B31BOSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - IGBTs - Modules - MOD IGBT LOW PWR ECONO		Original	PDF

IFS75B12N3E4_B31 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules IFS75B12N3E4_B31	Original	PDF	IFS75B12N3E4
474F3 Abstract: No abstract text available Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt	Original	PDF	IFS75B12N3E4 E1322 FF326DC FC26E1 2313F D36134 1231423567896AB 54F36C 4112CD3567896BE 474F3
Untitled Abstract: No abstract text available Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules IFS75B12N3E4_B31	Original	PDF	IFS75B12N3E4
IFS75B12N3E4_B31 Abstract: No abstract text available Text: Technische Information / technical information IFS75B12N3E4_B31 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt	Original	PDF	IFS75B12N3E4 IFS75B12N3E4_B31
Untitled Abstract: No abstract text available Text: IGC70T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:	Original	PDF	IGC70T120T8RM L7673U, L7673O,
Untitled Abstract: No abstract text available Text: IGC70T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:	Original	PDF	IGC70T120T8RM L7673U, L7673O,
IFS75B12N3E4 Abstract: No abstract text available Text: IGC70T120T8RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:	Original	PDF	IGC70T120T8RM L7673U, L7673O, IFS75B12N3E4