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    Infineon Technologies AG IFS75B12N3E4B32BOSA1

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    Rochester Electronics IFS75B12N3E4B32BOSA1 170 1
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    IFS75B12N3E4_B32 Datasheets Context Search

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    LTC4098-3.6

    Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense


    Original     		PDF IFS75B12N3E4 428654F4 BCFC24 E32DC BCFC26 E32DC6 6734F 9C46E4 327C53 1231423567896AB LTC4098-3.6 se666 k3332 edt0145.6 SEH-01T-P0.6

    ifs75b12n3e4_b32

    Abstract: No abstract text available
    Text: Technische Information / technical information IFS75B12N3E4_B32 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense


    Original     		PDF IFS75B12N3E4 ifs75b12n3e4_b32

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules IFS75B12N3E4_B32 Strommesswiderstand


    Original     		PDF IFS75B12N3E4

    Untitled

    Abstract: No abstract text available
    Text: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules IFS75B12N3E4_B32 MIPAQ base模块采用第四代沟槽栅/场终止IGBT和第四代发射集控制二极管带有电流采样电阻


    Original     		PDF IFS75B12N3E4