128X128

Abstract: HN25168S HN25169S
Contextual Info: HN25168S, HN25169S —Preliminary— 2048-word x 8-bit Programmable Read Only Memories The H IT A C H I H N 25168S and H N 25169S are high speed electrically programmable, fu lly decoded T T L B ipolar 16384 b it read on ly memories organized as 2048 words by 8 bits w ith on-chip address

Contextual Info: HN25168S, HN25169S -Prelim inary- 2048-word x 8-bit Programmable Read Only Memories The HITACHI HN25168S and HN25169S are high speed electrically programmable, fu lly decoded T TL Bipolar 16384 b it read only memories organized as 2048 words by 8 bits w ith on-chip address

Contextual Info: HN25168S, HN25169S Preliminary 2 0 4 8 - w o r d x 8 - b it Programmable Read Only Memories The HITACHI HN25168S and HN25169S are high speed electrically programmable, fu lly decoded T T L Bipolar 16384 b it read only memories organized as 2048 words by 8 bits w ith on-chip address

Contextual Info: H N 25168S, H N 25169S Preliminary 2 0 4 8 - w o r d x 8 -bit Programmable Read Only Memories The H IT A C H I HN25168S and H N 25169S are high speed e le ctrica lly programm able, fu lly decoded T T L B ipolar 16384 b it read o n ly memories organized as 2 0 4 8 words by 8 bits w ith on-chip address

Contextual Info: HN25168S, HN25169S 2 0 4 8 - word x 8 -b it Programmable Read Only Memories The H ITAC H I HN25168Sand HN25169S.are high speed electrically programmable, fu lly decoded T T L Bipolar 16384 b it read only memories organized as 2048 words by 8 bits w ith on-chip address

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

eprom 2716

Abstract: mb7138e TBP28S166 2716 JL SKB 7 04 DM87S191B DM87S290A DM87S291A DM87S291B HM76160-5
Contextual Info: - 6 3 16 8 0 t A 4 z U J M I M % tt « CC TAAC max ns;) TCAC max (ns) TOH max Ins) TOE (ns) TOD max (ns) m V D D or V C C (V) (Ta=2:5"C) I DD typ, (ibA) I DD max (mA) a I IL/VIIl max (lA/V) -h/m s i l i VIL max (V) IIH/VIIH max OnA/V) ÜJ ¿ ) / M 3 Ê «

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .