Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors > Soldering Electrode GRM32/43/55 Data Sheet Monolithic Ceramic Capacitors GRM32NR72A104KA01p 1210, X7R, 0.10µF, 100Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 3.20mm±0.30mm
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GRM32/43/55
GRM32NR72A104KA01p
100Vdc)
180mm
330mm
100Vdc
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Untitled
Abstract: No abstract text available
Text: CHIP MONOLITHIC CERAMIC CAPACITOR FOR GENERAL GRM32NR72A104KA01_ 1210, X7R, 0.1uF, 100Vdc _: packaging code Reference Sheet 1.Scope This product specification is applied to Chip Monolithic Ceramic Capacitor used for General Electronic equipment. 2.MURATA Part NO. System
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GRM32NR72A104KA01_
100Vdc)
JEMCGC-2701V
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM32NR72A104KA01p 1210, X7R, 0.10µF, 100Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 3.2mm±0.3mm Code
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GRM32NR72A104KA01p
100Vdc)
180mm
330mm
100Vdc
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PDF
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM32NR72A104KA01p 1210, X7R, 0.10µF, 100Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 3.2mm±0.3mm Code
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GRM32NR72A104KA01p
100Vdc)
180mm
330mm
100Vdc
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PDF
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM32NR72A104KA01p 1210, X7R, 0.10µF, 100Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 3.2mm±0.3mm Code
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GRM32NR72A104KA01p
100Vdc)
180mm
330mm
100Vdc
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GRM55DR72J224KW01L
Abstract: gcm31c GCM31MR71H474KA37 GRM32B7U3D221JW31L LLC219R71C104MA01L GCM216 GCM155 GCM31MR71H334KA37 GRM188 GCM188
Text: Capacitors Monolithic Ceramic Capacitors GCM_R7 X7R High Dielectric Constant Type X7R 10/16/25/50V g e T e L Part Number GCM033 GCM155 GCM188* GCM216 GCM219 GCM21B GCM319 GCM31M GCM31C GCM32N GCM32R GCM32D GCM32E GCM43R GCM43E GCM55R L 0.6 ±0.03 1.0 ±0.05
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10/16/25/50V
GCM033
GCM155
GCM188*
GCM216
GCM219
GCM21B
GCM319
GCM31M
GCM31C
GRM55DR72J224KW01L
gcm31c
GCM31MR71H474KA37
GRM32B7U3D221JW31L
LLC219R71C104MA01L
GCM216
GCM155
GCM31MR71H334KA37
GRM188
GCM188
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SNVS629
Abstract: lm5050-1
Text: User's Guide SNVA458A – April 2011 – Revised May 2013 AN-2087 LM5050-1EVAL Evaluation Board 1 Introduction The LM5050-1 evaluation board is designed to demonstrate the capabilities of the LM5050-1 OR-ing Diode Controller. One high side N-channel power MOSFET is used. The LM5050-1 evaluation board
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SNVA458A
AN-2087
LM5050-1EVAL
LM5050-1
LM5050-1High
SNVS629)
SNVS629
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EI -40C
Abstract: No abstract text available
Text: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical
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RF3933
DS120306
EI -40C
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PDF
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Untitled
Abstract: No abstract text available
Text: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >240W Advanced Heat Sink Technology Single Circuit for 865MHz To
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RFG1M09180
700MHZ
1000MHZ
1000MHZ
RF400-2
865MHz
960MHz
47dBm
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Untitled
Abstract: No abstract text available
Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology
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RFG1M09090
700MHZ
1000MHZ
RFG1M09090
RF400-2
865MHz
960MHz
44dBm
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RFG1M20180
Abstract: ATC800B820JT
Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to
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RFG1M20180
RFG1M20180
RF400-2
-36dBc
-55dBc
DS120418
ATC800B820JT
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Untitled
Abstract: No abstract text available
Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features Advanced GaN HEMT Technology Peak Power 125W Wideband Single Circuit for 225 - 450MHz 48V Modulated Typical
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RFHA1042
225MHz
450MHz
RFHA1042
RF400-2
-26dBc
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RFG1M20180SB
Abstract: j35 fet RFG1M20180SQ
Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to
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RFG1M20180
RFG1M20180
RF400-2
-38dBc
-55dBc
DS120803
RFG1M20180SB
j35 fet
RFG1M20180SQ
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Untitled
Abstract: No abstract text available
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
EAR99
RF3931
DS120306
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ATC800A
Abstract: RF3931 ER35
Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB
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RF3931
EAR99
RF3931
cellul01L
GRM55ER72A475KA01L
100uF,
ECE-V1HA101UP
ATC800A
ER35
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Untitled
Abstract: No abstract text available
Text: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to
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RFG1M20180
RFG1M20180
RF400-2
-36dBc
-55dBc
DS110406
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GRM55ER72A475KA01L
Abstract: RF3934 DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS
Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance
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RF3934
RF3934
DS111005
GRM55ER72A475KA01L
DS111005
GRM32NR72A104KA01L
ATC800A330JT
RF3934PCBA-410
140W
ERJ8GEYJ100V
GaN ADS
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium
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RFHA1027
RFHA1027
DS131216
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Untitled
Abstract: No abstract text available
Text: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed
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RFG1M20090
RFG1M20090
DS130823
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Untitled
Abstract: No abstract text available
Text: RF3933 RF3933 90W GaN Wideband Power Amplifier The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier
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RF3933
RF3933
DS130905
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Untitled
Abstract: No abstract text available
Text: RF3934 RF3934 120W GaN Wideband Power Amplifier The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier
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RF3934
RF3934
DS131206
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PDF
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Untitled
Abstract: No abstract text available
Text: RFG1M20180 RFG1M20180 180W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20180 is optimized for commercial infrastructure applications in the 1.8GHz to 2.2GHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density gallium nitride GaN semiconductor process optimized for high
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RFG1M20180
RFG1M20180
DS130822
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GRM55DR72A105KA01
Abstract: GRM55ER72A475KA01 GRM55N GRM55DR61H106KA01 GRM32NR72A104KA01 GRM55ER71H475KA01 CU10F GRM43R GRM43ER72A225KA GRM43ER72A225KA01
Text: !注 请阅读本产品目录中的产品规格，以及有关保管使用环境、规格上的注意事项、装配时的注意事项、使用时的注意事项的!注意事项，以免发生冒烟和（或）燃烧等。 本目录因没有足够的空间说明详细规格，仅载明标准特性。因此，在订购产品之前，谨请核准其规格或者办理产品规格表。
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C02C2
GRM32/43/55
GRM329
GRM32M
GRM32N
GRM32R
GRM32E
GRM43M
GRM43N
GRM43R
GRM55DR72A105KA01
GRM55ER72A475KA01
GRM55N
GRM55DR61H106KA01
GRM32NR72A104KA01
GRM55ER71H475KA01
CU10F
GRM43ER72A225KA
GRM43ER72A225KA01
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grm32df51h106
Abstract: GRM43ER72A225KA01 GRM55ER72A475 GRM55RR GRM15X5C1H390JDB4
Text: C02E10.pdf 04.1.20 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF
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C02E10
Y1000
grm32df51h106
GRM43ER72A225KA01
GRM55ER72A475
GRM55RR
GRM15X5C1H390JDB4
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