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    Samtec Inc RCE-01-G-00.37-D

    ACCLIMATE IP68 SEALED RECTANGULA
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    DigiKey RCE-01-G-00.37-D Bulk 1
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    Avnet Americas RCE-01-G-00.37-D 1
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    Mouser Electronics RCE-01-G-00.37-D
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    Master Electronics RCE-01-G-00.37-D
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    Sager RCE-01-G-00.37-D 1
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    Samtec Inc ACP-22-05-G-00.37-T-T-P-1

    ACP-22-05-G-00.37-T-T-P-1
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    Samtec Inc ACP-22-01-G-00.37-T-T-P-1

    ACP-22-01-G-00.37-T-T-P-1
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    Laird Performance Material 4184AL51G00377

    - Bulk (Alt: 4184AL51G00377)
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    Vishay Intertechnologies G0037R500CS7080

    G-3-80 7.5 .25% S70 - Tape and Reel (Alt: G0037R500CS7080)
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    Avnet Americas G0037R500CS7080 Reel 70 Weeks 1,000
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    G0037 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec 2501 optocoupler

    Abstract: DIN 32676 Wiring Diagram pt-100 siemens pt100 temperature sensor schematic DEUTSCH connectors abc nec matrix Vacuum tube display nec 14308 Siemens PT100 temperature sensor coriolis D184B111U02
    Text: Operating Instruction D184B111U02 Mass Flowmeter CoriolisMaster FCM2000 Standard software D699G001U01 C.1x D699G001U02 C.1x D699G001U03 C.1x P R O F PROCESS FIELD BUS B U S I Blinder Text Mass Flowmeter CoriolisMaster FCM2000 Operating Instruction D184B111U02


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    PDF D184B111U02 FCM2000 D699G001U01 D699G001U02 D699G001U03 D-37079 11U02 3KXF411003R4403 nec 2501 optocoupler DIN 32676 Wiring Diagram pt-100 siemens pt100 temperature sensor schematic DEUTSCH connectors abc nec matrix Vacuum tube display nec 14308 Siemens PT100 temperature sensor coriolis D184B111U02

    Untitled

    Abstract: No abstract text available
    Text: L ALLEGRO MI C R O S Y S T E M S INC =13 » 0SD433Û G0037ÖD IALGR T-91-01 PROCESS BKF Process BKF Schottky Diode P roce ss B K F is a high-speed silicon Schottkybarrier diode. It has a typical breakdown-voltage rat­ ing of 7 0 V and can operate with up to 200 m A of


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    PDF 0SD433Ã G0037Ã T-91-01 10M-A

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC T3 D • D5GM33Ö G0037S7 3 ■ ALGR T-91-01 P R O C E S S N J26L Process NJ26L N-Channel Junction Field-Effect Transistor Process NJ26L is an N-channel junction fietdeffect transistor designed for general-purpose, lownolse, high-galn applications not requiring high


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    PDF D5GM33Ã G0037S7 T-91-01 NJ26L NJ26L -R009

    SK200da100d

    Abstract: No abstract text available
    Text: S IE D I SEtUKRON Ö13bb71 G0037b0 703 « S E K G s e M IK R D n INC Maximum Ratings Conditions VcEVsus lc = 1 A, V be = - 2 V > OJ I II III CO > VcEV Ie = o VcBO Units Values Symbol 1000 V 1000 V 1000 V 200 A If = - lc D. C. 200 A o II V D. C. o 7 lc V ebo


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    PDF 13bb71 G0037b0 fll3bb71 00037b3 SK200DA100D SK200da100d

    Untitled

    Abstract: No abstract text available
    Text: H Y 6 2 8 1 0 0 A -I •HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


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    PDF 128KX HY628100A-I 1DD03-11-MAY94 0Q037hD HY628100ALP-I HY628100ALLP-I HY628100ALG-I

    Untitled

    Abstract: No abstract text available
    Text: MIE D TAIWAN LITON ELECTRONIC • flfl3Sb^S Q0037M5 3^3 ■ TLIT TS- 50301/50801 SFRIFS LTS 50302A/50802A ShRlhS T L I T E M * 5 INCH SINGLE COLOR & MULTICOLOR ULTRA LARGE SINGLE D IG IT LED NUMERICAL DISPLAY FEATURES • • • • • • • • • •


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    PDF Q0037M5 0302A/50802A

    skm 200 gb 122 d

    Abstract: SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122
    Text: SEMIKRON Conditions ' VcES VcGR lc ICM V ges Tease Ptot per Values . 101 D . 121 D . 102 D . 122 D 1000 1200 1000 1200 200/150 400/300 ±20 1250 - 5 5 . .+150 2 500 Class F 55/150/56 Rge = 20 k fl = 25/80 °C Tease = 25/80 °C T j, Tstg Visol AC, humidity


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    PDF l3bb71 G0D37G2 10-E1 skm 200 gb 122 d SKM 200 GB 102 D SKM 200 GB 12V Si 122D SKM 150 GB 12V SKM 200 GB 102D skm 150 gal 122d SEMIKRON SKM 50 GAL 121D SEMIKRON SKM 22 GAL 121D semikron skm 150 gb 122

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Preliminary D ata S heet IXSH25N120A IGBT ^C25 VCES Improved SCSOA Capability Symbol V CE sat Test Conditions Maximum Ratings TO-247AD v CES Ta = 25°C to 150°C 1200 V v CGR Tj 1200 V = 25°C to 150°C; RGE= 1 MCI v GES Continuous ±20 V v GEM Transient


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    PDF IXSH25N120A O-247AD G00375S

    Untitled

    Abstract: No abstract text available
    Text: May 1992 PRELIMINARY Micro Linear ML4404 Trajectory Generator GENERAL DESCRIPTION FEATURES The ML4404 Trajectory Generator provides the trajectory function for time optimal head positioning systems. The ML4404 receives position and velocity information from a servo controller, such as the


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    PDF ML4404 ML4404 ML4403, ML4414 btn341fl 0DD373Ã 14403CQ

    MP574AJD

    Abstract: MP574AKD
    Text: MICRO PO W E R S Y S T E M S INC 45E D El bQc1744M DQOBTDO 5 EIMPS r-si-io-ii. MP574A Complete 12-Bit, 25^sec Analog-to-Digital Converter With Microprocessor Interface Micro Power Systems FEATURES • Complete 12-Bit A/D Converter with Reference Clock and Three-State Outputs


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    PDF 1744M MP574A 12-Bit, 12-Bit 16-Bit 28-Pin MP574A DB11-DB0 MP574AJD MP574AKD

    NTE9099

    Abstract: NTE9924 NTE9930 NTE9961 NTE9158 nte9093 NTE9800 NTE9135 NTE9157 NTE913
    Text: INTEGRATED CIRCUITS - DTL SERIES DIODE TRANSISTOR LOGIC NTE9097, 14-Lead DIP, See Diag. 247 NTE9099 Dual J -K Flip-Flop (Power Drain = 34/28mA Max) Q1 □ Q1 Q GND Q NTE9157, 14-Lead DIP, See Diag. 247 NTE9158 Quad 2-Input Buffer,.Hex Inverter (Output Loading Factor = 25/27)


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    PDF NTE9093, 14-Lead NTE9094 28/34mA NTE9097, NTE9099 34/28mA NTE9135 NTE9099 NTE9924 NTE9930 NTE9961 NTE9158 nte9093 NTE9800 NTE9135 NTE9157 NTE913

    Untitled

    Abstract: No abstract text available
    Text: 14E D INTEGRATED DEVICE • MÔS5771 00037bl 3 m CMOS SERIAL-TO-PARALLEL FIFO 2048 x 9 BIT & 4096 x 9 BIT IDT 72132 IDT 72142 FEATURES: DESCRIPTION: • 35ns parallel port access time ’ The IDT72132/72142 are high-speed, low-power serlal-toparallel FIFOs. These FIFOs are Ideally suited to serial communi­


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    PDF S5771 00037bl 4AE5771 IDT72142* MIL-STD-883, 50MHz 40MHz 33MHz 28MHz

    Untitled

    Abstract: No abstract text available
    Text: bq2002 BENCHMARQ Fast Charge 1C Features General Description > Fast charge of nickel cadmium or nickel-metal hydride batteries The bq2002 Fast Charge IC is a lowcost CMOS battery charge controller providing reliable charge termination for both NiCd and NiMH b attery


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    PDF bq2002 bq2002 i37aan

    mt90c

    Abstract: MT56C0816EJ-25 mt56c0816
    Text: MICRON TECHNOLOGY INC SSE T> WÊ blllSHT 0 0 0 3 ^ 3 7HT B U R N MT56C0816 8K x 16, DUAL 4K x 16 CACHE DATA SRAM V H C Z R O N CACHE DATA SRAM SINGLE 8Kx 16 SRAM, DUAL4KX16 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 16 SRAMs with common


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    PDF MT56C0816 DUAL4KX16 52-Pin MT56CO016 mt90c MT56C0816EJ-25

    Untitled

    Abstract: No abstract text available
    Text: 14E D INTEGRATED DEVICE • 4Û2S771 00G3747 =1 CMOS PARALLEL-TO-SERIAL FIFO 2048 x 9-BIT & 4096 x 9-BIT IDT 72131 IDT 72141 FEATURES: DESCRIPTION: • 35ns parallel port access time • 5 0M H z serial port shift rate Th e ID T72131/72141 are high-speed, low power paraliei-toserlal FIFOs. These FIFOs are Ideally suited to serial com munica­


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    PDF 2S771 00G3747 T72131/72141 T72132/72142) IDT72131/IDT72141 0GD37L MIL-STD-883, 50MHz

    Untitled

    Abstract: No abstract text available
    Text: .100" 2.54 mm Header (Preferred Version in Europe and Asia) 1100-12 Right Angle Locking (High Backwall) Right angle locking polarizing headers with preinserted .025” square pins. Allows many design options, when low profile or locked interconnects are required. Mates


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    PDF 110X-12-1XX-02 110X-12-102-02 E-48567 b052557 0DD36Db

    Untitled

    Abstract: No abstract text available
    Text: September 1994 Micro Linear ML4411 Sensorless Spindle Motor Controller GENERAL DESCRIPTION Th e 4411 provides com plete com m utation for delta or w y e w ou nd Brushless D C B L D C motors w ithout the need for signals from H all Effect Sensors. T h is 1C senses


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    PDF ML4411 L4411 ML4411/ML4411A ML4411CS 28-Pin CI003777

    Untitled

    Abstract: No abstract text available
    Text: H Y 6 2 8 1 0 0 A -HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


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    PDF 128KX HY628100A G00374Ã HY6281OOA HY628100AP HY628100ALP HY628100ALLP HY628100AG

    Untitled

    Abstract: No abstract text available
    Text: XICOR INC ^41743 SEE D QDD3731 47fi * X I C Preliminary Information Z8 Microcontroller Family Compatible X86C64 64K 8 1 9 2 x 8 Bit E2 Micro-Peripheral ~ F 4 0 - 1 5 -9 0 FEATURES DESCRIPTION * CONCURRENT READ WRITE — Dual Plane Architecture Isolates Read/Write Functions


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    PDF QDD3731 X86C64

    2SC1172

    Abstract: SOLITRON DEVICES
    Text: MAE D SOLITRON DEVICES INC • 0Olitran Devices, Inc. S P E C I F I C A T I O N S MAXIMUM RATINGS NO.: 2SC1172 TYPE: NPN S IL IC O N CASE: TO—3 Voltage, Collector to Base VCB0 Voltage, Collector to Emitter (VCE0) Voltage, Emitter to Base (VEB0) Collector Current (lc) .


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    PDF A3bflb02 G0037bfl 2SC1172 800MA 800MA SOLITRON DEVICES