Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HY628100A Search Results

    SF Impression Pixel

    HY628100A Price and Stock

    Hyundai/Hynix HY628100ALLG-55

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HY628100ALLG-55 42
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Hitachi Ltd HY628100ALG-55

    Static RAM, 128Kx8, 32 Pin, Plastic, SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY628100ALG-55 41
    • 1 $10.8
    • 10 $7.2
    • 100 $6.66
    • 1000 $6.66
    • 10000 $6.66
    		Buy Now

    SK Hynix Inc HY628100ALG-70

    Static RAM, 128Kx8, 32 Pin, Plastic, SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY628100ALG-70 352
    • 1 $14.6016
    • 10 $14.6016
    • 100 $14.6016
    • 1000 $7.3008
    • 10000 $7.3008
    		Buy Now

    SK Hynix Inc HY628100ALLG-70

    128KX8 STANDARD SRAM, 70ns, PDSO32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY628100ALLG-70 8
    • 1 $5.4
    • 10 $2.7
    • 100 $2.7
    • 1000 $2.7
    • 10000 $2.7
    		Buy Now

    SK Hynix Inc HY628100ALLP55

    128K X 8 STANDARD SRAM Standard SRAM, 128KX8, 55ns, CMOS, PDIP32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HY628100ALLP55 12
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    HY628100A Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HY628100A Hynix Semiconductor 128K x 8-Bit CMOS SRAM Original PDF
    HY628100AG Hynix Semiconductor 128K x 8-Bit CMOS SRAM Original PDF
    HY628100AG Hynix Semiconductor 128K x 8-Bit CMOS SRAM Original PDF
    HY628100AG-55 Hyundai 128K x 8-Bit CMOS SRAM, standby current 1 mA, 55ns Original PDF
    HY628100AG-70 Hyundai 128K x 8-Bit CMOS SRAM, standby current 1 mA, 70ns Original PDF
    HY628100AG-85 Hyundai 128K x 8-Bit CMOS SRAM, standby current 1 mA, 85ns Original PDF
    HY628100ALG Hynix Semiconductor 128K x 8-Bit CMOS SRAM Original PDF
    HY628100ALG-55 Hyundai 128K x 8-Bit CMOS SRAM, standby current 100 uA, 55ns Original PDF
    HY628100ALG-70 Hyundai 128K x 8-Bit CMOS SRAM, standby current 100 uA, 70ns Original PDF
    HY628100ALG-85 Hyundai 128K x 8-Bit CMOS SRAM, standby current 100 uA, 85ns Original PDF
    HY628100ALLG Hynix Semiconductor 128K x 8-Bit CMOS SRAM Original PDF
    HY628100ALLG-55 Hyundai 128K x 8-Bit CMOS SRAM, standby current 20 uA, 55ns Original PDF
    HY628100ALLG-70 Hyundai 128K x 8-Bit CMOS SRAM, standby current 20 uA, 70ns Original PDF
    HY628100ALLG-85 Hyundai 128K x 8-Bit CMOS SRAM, standby current 20 uA, 85ns Original PDF
    HY628100ALLT1 Hynix Semiconductor 128K x 8-Bit CMOS SRAM Original PDF
    HY628100ALLT1-55 Hyundai 128K x 8-Bit CMOS SRAM, standby current 20 uA, 55ns Original PDF
    HY628100ALLT1-70 Hyundai 128K x 8-Bit CMOS SRAM, standby current 20 uA, 70ns Original PDF
    HY628100ALLT1-85 Hyundai 128K x 8-Bit CMOS SRAM, standby current 20 uA, 85ns Original PDF
    HY628100ALT1 Hynix Semiconductor 128K x 8-Bit CMOS SRAM Original PDF
    HY628100ALT1-55 Hyundai 128K x 8-Bit CMOS SRAM, standby current 100 uA, 55ns Original PDF

    HY628100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HY628100A Series 128Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed


    Original     		PDF HY628100A 128Kx8bit -100mA 100mA 32pin 525mil

    HY628100ALLG-55

    Abstract: HY628100A HY628100AG HY628100ALG HY628100ALLG HY628100ALLT1 HY628100ALT1 HY628100AT1
    Text: HY628100A Series 128Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed


    Original     		PDF HY628100A 128Kx8bit 32pin 525mil 8x20mm 100mA HY628100ALLG-55 HY628100AG HY628100ALG HY628100ALLG HY628100ALLT1 HY628100ALT1 HY628100AT1

    128Kx8bit

    Abstract: HY628100A HY628100AG HY628100ALG HY628100ALLG HY628100ALLT1 HY628100ALT1 HY628100AT1
    Text: HY628100A Series 128Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed


    Original     		PDF HY628100A 128Kx8bit 32pin 525mil 8x20mm HY628100AG HY628100ALG HY628100ALLG HY628100ALLT1 HY628100ALT1 HY628100AT1

    CON AT62B

    Abstract: ISA-A19 ISP1581 XC95144 philips choke ferrite isp1581 scanner 8051 philips details scanner schematics circuit for 8051 interface with memory Xilinx usb cable Schematic
    Text: UM10020-01 ISP1581 Scanner Eval Kit User’s Guide September 2002 File name of the previous revision was UM10003-02.pdf User’s Guide Rev 1.2 Revision History: Version Date 1.2 Sep, 2002 1.1 July 2002 1.0 April, 2002 Descriptions Divided the ISP1581 Evaluation Kit User’s Guide UM10003-02.pdf


    Original     		PDF UM10020-01 ISP1581 UM10003-02 UM10019-01 UM10020-01 CON AT62B ISA-A19 XC95144 philips choke ferrite isp1581 scanner 8051 philips details scanner schematics circuit for 8051 interface with memory Xilinx usb cable Schematic

    UM62256EM-70LL

    Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
    Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD43256B-B PD43256BGU-70LL PD43256BGW-70 PD441000L-B PD442000L-B UM62256EM-70LL UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723

    UM10019

    Abstract: isa slot pcb layout CON AT62B D14TEST at62b XC95144 ISA-A19 UM10019-01 ISP1581 AM29F160DB75EC
    Text: UM10019_2 ISP1581 PC Eval Kit User’s Guide December 2002 User’s Guide Rev. 1.3 Revision History: Version Date 1.3 Dec 2002 1.2 Sept 2002 1.1 July 2002 1.0 April 2002 Descriptions Updated Table 9-1. Divided the ISP1581 Evaluation Kit User’s Guide UM10003-02.pdf into


    Original     		PDF UM10019 ISP1581 UM10003-02 UM10019-01 UM10020-01 UM10021-01 isa slot pcb layout CON AT62B D14TEST at62b XC95144 ISA-A19 AM29F160DB75EC

    isa slot pcb layout

    Abstract: XC95144 ISP1581 CON AT62B atapi firmware D14TEST xilinx 8051
    Text: Philips Semiconductors Connectivity July 2002 UM10003-02 ISP1581 Evaluation Kit User’s Guide Rev 1.1 Revision History: Version 1.1 Date July 2002 1.0 March 2002 Descriptions • Changed D14TEST.INF to PHKIT.INF and D14TEST.SYS to PHKIT.SYS. • Updated Section 11.3.


    Original     		PDF UM10003-02 ISP1581 D14TEST ag5144-15PQ160I SOJ-32W isa slot pcb layout XC95144 CON AT62B atapi firmware xilinx 8051

    fujitsu STARTERkit mb90f

    Abstract: CD74ACT573 MB90F549 MC-16LX k6r1016c1c
    Text: Application Note Using the External Bus Interface F²MC-16LX Family Fujitsu Mikroelektronik GmbH, Microcontroller Application Group History 25th April. 00 26th April. 00 TKa/MEn V1.0 TKa/MEn V1.1 10th Mai 00 TKa V1.2 27th June 00 18th Sept. 00 TKa MSt V1.3


    Original     		PDF MC-16LX A16-A23 fujitsu STARTERkit mb90f CD74ACT573 MB90F549 k6r1016c1c

    MB90F540

    Abstract: AD139 MB90350-series fujitsu STARTERkit mb90f MC-16LX MB90495 MB90540 16bitD DEVKIT16 k6r1016c1c
    Text: Fujitsu Microelectronics Europe Application Note FMEMCU-AN-900034-19 F²MC-16LX FAMILY 16-BIT MICROCONTROLLER ALL SERIES EXTERNAL BUSINTERFACE APPLICATION NOTE External Businterface Revision History Revision History Date 25 April 00 26th April 00 Issue th


    Original     		PDF FMEMCU-AN-900034-19 MC-16LX 16-BIT A16-A23 AN-900034-19 MB90F540 AD139 MB90350-series fujitsu STARTERkit mb90f MB90495 MB90540 16bitD DEVKIT16 k6r1016c1c

    Untitled

    Abstract: No abstract text available
    Text: H Y 6 2 8 1 0 0 A -I •HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF 128KX HY628100A-I 1DD03-11-MAY94 0Q037hD HY628100ALP-I HY628100ALLP-I HY628100ALG-I

    Untitled

    Abstract: No abstract text available
    Text: H Y 6 2 8 1 0 0 A • ' H Y U N D A 128Kx8bit CMOS SRAM I DESCRIPTION FEATURES The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed for high speed


    OCR Scan     		PDF 128Kx8bit HY628100A HY628100A -100mA 100mA 32pin 525mil 8x20mm

    Untitled

    Abstract: No abstract text available
    Text: -H Y U N D A I H Y 6281O 0A DESCRIPTION FEATURES The HY628100A is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A uses high performance CMOS process technology and designed fo r high speed


    OCR Scan     		PDF HY628100A HY6281OOA 6281O 128Kx8bit 32pin 8x20mm

    I0042

    Abstract: HA11
    Text: »HYUNDAI H Y 6 2 8 1 0 0 A -I S e r ie s 128K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628100A-I 128Kx HY628100A-I T0008 1DD03-11-MAY95 4b75QSfi HY628100ALP-I I0042 HA11

    Untitled

    Abstract: No abstract text available
    Text: • « H Y U N D A I HY628100A-I Series 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628100A-I 128KX T0-006 1D003-11-MAY95 HY628100ALP-I HY628100ALLP-I

    F0016

    Abstract: No abstract text available
    Text: “H Y U N D A I H Y 6 2 8 1 0 0 A S e r ie s 128K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628100A HY628100AP HY628100ALP HY628100ALLP HY628100AG HY628100ALG HY628100ALLG HY628100AT1 F0016

    HY628100ALP

    Abstract: No abstract text available
    Text: HYUNDAI H Y 6 2 8 1 O O A S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628100A 128Kx -270t 1DD02-11-MAY9S HY6281OOAP HY628100ALP

    Untitled

    Abstract: No abstract text available
    Text: HY628100A-I Series •HY UNDAI 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628100A-I 128KX temperature004 1DD03-11-MAY95 HY628100ALP-I HY628100ALLP-I

    Untitled

    Abstract: No abstract text available
    Text: H Y 6 2 8 1 0 0 A -HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF 128KX HY628100A G00374Ã HY6281OOA HY628100AP HY628100ALP HY628100ALLP HY628100AG

    Untitled

    Abstract: No abstract text available
    Text: HY628100A- I - H Y U N D A I Series 128Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628100A/HY6281OOA-I is a high speed, low power and 1M bit CMOS Static Random Access Memory organized as 131,072 words by 8bit. The HY628100A/HY6281 OOA-I uses high performance CMOS process technology and


    OCR Scan     		PDF HY628100A- 128Kx8bit HY628100A/HY6281OOA-I HY628100A/HY6281 32pin 600mil 8x20mm

    128k x8 SRAM TSOP

    Abstract: HY62U256
    Text: SRAM PRODUCT 64Kbit As of '96.3Q DESCRIPTION PART NO, SPEED ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) AVAILABILITY TTL CMOS 50 2 1 50 2 1 50 2 1 100/120/150 25 0.5 0.015 5 5 /7 0 /8 5 /1 0 0 8 1 1 HY62256B-I (E T ) 7 0 /8 5 /1 0 0 8 1 0.1 HY62V256B(3.3V)


    OCR Scan     		PDF 64Kbit HY6264A HY6264A-I 256Kbit HY62256A HY62256A-I HY62V256( HY62256B HY62256B-I HY62V256B 128k x8 SRAM TSOP HY62U256

    256KX8 SRAM 25nS

    Abstract: 256Kx8bit SRAM 64KX8 5V HY62U256 BT 151
    Text: ««HYUNDAI TABLE OF CONTENTS 1. T A B L E O F C O N T E N T S In d e x. 1 2. P R O D U C T Q U IC K R E F E R E N C E G U ID E


    OCR Scan     		PDF 64K-bit HY6264A HY6264A-I 256K-bit 100/120/150ns, 256Kx16-bit, 120/150/200ns, 32Kx8-bit, 256KX8 SRAM 25nS 256Kx8bit SRAM 64KX8 5V HY62U256 BT 151

    HY628400LLT1

    Abstract: LA4500 628-400 628400 HY628400LP
    Text: HY 628400- i • H Y U N D A I Series 512Kx8bit C M O S SRAM DESCRIPTION FEATURES Fully static operation and Tri-state outputs TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min) data retention Standard pin configuration


    OCR Scan     		PDF 512Kx8bit HY628400/HY628400-I HY628400/ HY628400-I 32pin 400mil HY628400LLT1 LA4500 628-400 628400 HY628400LP

    HY628400LLG

    Abstract: HY628400LG-I HY628400LLP 8K*8 sram 52-PIN
    Text: •HYU N DAI QUICK REFERENCE SRAM ORGANIZATION 64K bit 8Kx8 256K bit (32Kx8) 6 PART NUMBER SPEED(ns) FEATURES HY6264AP HY6264ALP HY6264ALLP HY6264AJ HY6264ALJ HY6264ALLJ 70/85/100/120 70/85/100/120 70/85/100/120 70/85/100/120 70/85/100/120 70/85/100/120


    OCR Scan     		PDF HY6264AP HY6264ALP HY6264ALLP HY6264AJ HY6264ALJ HY6264ALLJ HY6264ALP-I HY6264ALLP-I HY6264ALJ-I HY6264ALLJ-I HY628400LLG HY628400LG-I HY628400LLP 8K*8 sram 52-PIN

    1128K

    Abstract: 64K X 4 SRAM
    Text: TABLE OF CONTENTS «HYUNDAI 1. TABLE OF CONTENTS Ind ex. 1 2. PRODUCT QUICK REFERENCE GUIDE


    OCR Scan     		PDF 64K-bits HY6264A. HY6264A-1. 256K-bits 120ns. HY2316000. 16-bit. HY2316050. 1128K 64K X 4 SRAM