FTA50V
Abstract: er c128
Text: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S DE I A3bflb02 □OOE'ìl'ì 3 | ~ INC 95D 0 2 9 1 9 Ä1TÄ\[L Q ( Devices, Inc' MEDIUM VOLTAGE, FAST RECOVERY CHIP NUMBER PN EPITAXIAL FAST RECOVERY PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000 A Aluminum
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A3bflb02
457mm)
C-128
FTA50V
er c128
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125CV
Abstract: solitron rectifier
Text: SOLITRON DEVICES INC flbD D • A3bflb02 D0D53fl^ 0 SCHOTTKY RECTIFIERS SSD51 Solitran DEVICES, INC. POWER SCHOTTKY RECTIFIER 60 AMPERES FEATURES HIGH EFFICIENCY NANOSECOND SWITCHING LOW CAPACITANCE HERMETICALLY SEALED VERY LOW FORWARD VOLTAGE DROP HIGH SPEED SWITCHING CIRCUITS
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A3bflb02
D0D53fl^
SSD51
000S3TQ
SSD51
125CV
solitron rectifier
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Untitled
Abstract: No abstract text available
Text: Contran ,nc product W.ÌÌ3Ì« N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 6 0 0 V, UNITS SYMBOL Drain-source Volt. l Dra in-Gate Vo 1tage (R g s =1.0M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25*C) Drain Current Pulsed(3)
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A3bflb02
MIL-S-19500
SDF17N60
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Untitled
Abstract: No abstract text available
Text: PRODUCT CÂTÀLQQ_ J a W t x a n , N-CHANNEL ENHANCEMENT MOS FET 900V, 13A, 0.85Q SDF13N90 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES
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SDF13N90
MIL-S-19500
30Diode
IF-13A
di/dt-100A/MS
A3bflb02
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Untitled
Abstract: No abstract text available
Text: Æwtion PRODUCT CÂTÂLÛi D EV I CE S. IN C. N-CHANNEL ENHANCEMENT MOS FET 3301 ELECTRONICS WAY • WEST PALM BEACH. FLORIDA 33407 T E L : 407 8 4 8 - 4 3 J 1 • TLX: 51 -3435 • FAX: (407) 8G3-5946 800V, 9.0A, 1 . 4 0 ABSOLUTE MAXIMUM RATINGS PARAMETER
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8G3-5946
SDF9NA80
A37-2
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Untitled
Abstract: No abstract text available
Text: M o [D )(y j ir © Ä T rÄ [L ( P -C H A N N E L E N H A N C E M E N T D U A L M O S FET mm CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum .026" (0.660mm) 12,000 Backside Contact: 3,000 A Gold ASSEM BLY RECOMMENDATIONS -035" (0.889mm)
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660mm)
889mm)
0254mm)
-10mA,
10rnA
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2SC1172
Abstract: SOLITRON DEVICES
Text: MAE D SOLITRON DEVICES INC • 0Olitran Devices, Inc. S P E C I F I C A T I O N S MAXIMUM RATINGS NO.: 2SC1172 TYPE: NPN S IL IC O N CASE: TO—3 Voltage, Collector to Base VCB0 Voltage, Collector to Emitter (VCE0) Voltage, Emitter to Base (VEB0) Collector Current (lc) .
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A3bflb02
G0037bfl
2SC1172
800MA
800MA
SOLITRON DEVICES
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