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    FSS13 Price and Stock

    Rochester Electronics LLC FSS132-TL-E

    PCH 4V DRIVE SERIES
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    Rochester Electronics LLC FSS133-TL-E

    MOSFET P-CH
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    Rochester Electronics LLC FSS134A-TL-E

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    Samtec Inc QFSS-130-04.25-L-D-A

    .635MM DOUBLE ROW SHIELDED TERMI
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    Master Electronics QFSS-130-04.25-L-D-A
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    Samtec Inc SFSS-13-28-H-05.00-S

    SINGLE ROW DISCRETE WIRE ASSEMBL
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    DigiKey SFSS-13-28-H-05.00-S Bulk 1
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    Mouser Electronics SFSS-13-28-H-05.00-S
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    Find more FSS13 price and stock on Findchips.com

    FSS13 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FSS13 Fagor 1 Amp. Surface Mounted Schottky Barrier Rectifier Original PDF
    FSS130D Intersil 11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS130D1 Fairchild Semiconductor 11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS130D1 Intersil 11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS130D3 Fairchild Semiconductor 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSS130D3 Intersil 11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS130R Intersil 11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS130R1 Fairchild Semiconductor 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSS130R1 Intersil 11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS130R3 Fairchild Semiconductor 11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS130R3 Intersil 11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS130R4 Fairchild Semiconductor 11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS130R4 Intersil 11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS130R4 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    FSS131 Sanyo Semiconductor Load switch Original PDF
    FSS132 Sanyo Semiconductor Power MOSFETs(P channel) Original PDF
    FSS132-E Sanyo Semiconductor Transistor Mosfet P-CH 30V 7A 8SOP Original PDF
    FSS133 Sanyo Semiconductor Load switch Original PDF
    FSS133-E Sanyo Semiconductor Transistor Mosfet P-CH 20V 8A 8SOP Original PDF
    FSS134 Sanyo Semiconductor Power MOSFETs(P channel) Original PDF

    FSS13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7399 FSS130R4

    MOSFET MARK H1

    Abstract: 2E12 FSS130R4 JANSR2N7399 T0-257AA Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 99 /Subject (11A, 100V, 0.210 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines


    Original     		PDF JANSR2N7399 FSS130R4 R2N73 MOSFET MARK H1 2E12 FSS130R4 JANSR2N7399 T0-257AA Rad Hard in Fairchild for MOSFET

    schottky diode 100A

    Abstract: DO214 rectifier 50a Schottky Diode 50V 3A 50a rectifier circuit 50A schottky rectifier DO214-AB transistor 100a Schottky rectifier 3A 60v diode DO214
    Text: QUICK GUIDE Schottky Rectifier SCHOTTKY RECTIFIERS (SURFACE MOUNTED DEVICES) IF IFSM 20V 30V 40V 50V 60V FSS1 1A 40A FSS12 FSS13 FSS14 FSS15* FSS16* 0.50V 0.75V* DO214-AC FSS2 2A 50A FSS22 FSS23 FSS24 FSS25* FSS26* 0.50V 0.70V* DO214-AA FSS3 3A 100A FSS32


    Original     		PDF FSS12 FSS13 FSS14 FSS15* FSS16* DO214-AC FSS22 FSS23 FSS24 FSS25* schottky diode 100A DO214 rectifier 50a Schottky Diode 50V 3A 50a rectifier circuit 50A schottky rectifier DO214-AB transistor 100a Schottky rectifier 3A 60v diode DO214

    2E12

    Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1
    Text: FSS13A0D, FSS13A0R TM Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    Original     		PDF FSS13A0D, FSS13A0R 2E12 FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1

    2E12

    Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 Rad Hard in Fairchild for MOSFET
    Text: FSS13A0D, FSS13A0R Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    Original     		PDF FSS13A0D, FSS13A0R 2E12 FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3 Rad Hard in Fairchild for MOSFET
    Text: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSS130D, FSS130R 2E12 FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3 Rad Hard in Fairchild for MOSFET

    marking S132

    Abstract: FSS132 S132 TA2720
    Text: Ordering number:ENN6398 P-Channel Silicon MOSFET FSS132 Load Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS132] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27


    Original     		PDF ENN6398 FSS132 FSS132] marking S132 FSS132 S132 TA2720

    FSS138

    Abstract: No abstract text available
    Text: Ordering number:ENN6400 P-Channel Silicon MOSFET FSS138 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS138] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27


    Original     		PDF ENN6400 FSS138 FSS138] FSS138

    2E12

    Abstract: FSS130R4 JANSR2N7399 T0-257AA
    Text: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7399 FSS130R4 2E12 FSS130R4 JANSR2N7399 T0-257AA

    FSS133

    Abstract: S133
    Text: Ordering number : ENN6919 FSS133 P-Channel Silicon MOSFET FSS133 _ Load Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2116 [FSS133] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications


    Original     		PDF ENN6919 FSS133 FSS133] FSS133 S133

    FSS138

    Abstract: IT00414
    Text: Ordering number:ENN6400 P-Channel Silicon MOSFET FSS138 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS138] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27


    Original     		PDF ENN6400 FSS138 FSS138] FSS138 IT00414

    Rad Hard in Fairchild for MOSFET

    Abstract: No abstract text available
    Text: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSS130D, FSS130R Rad Hard in Fairchild for MOSFET

    IT02300

    Abstract: TA-2723 FSS139 S139 ENN7019
    Text: Ordering number : ENN7019 FSS139 P-Channel Silicon MOSFET FSS139 Load Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2116 [FSS139] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications


    Original     		PDF ENN7019 FSS139 FSS139] IT02300 TA-2723 FSS139 S139 ENN7019

    2E12

    Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 FSS13A0R3 Rad hard for Harris
    Text: FSS13A0D, FSS13A0R Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    Original     		PDF FSS13A0D, FSS13A0R 1-800-4-HARRIS 2E12 FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 FSS13A0R3 Rad hard for Harris

    marking S139

    Abstract: IT02300 FSS139 S139
    Text: Ordering number : ENN7019 FSS139 SANYO Semiconductors DATA SHEET FSS139 P-Channel Silicon MOSFET Load Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2116 [FSS139] 5 4 0.2 1.8max


    Original     		PDF ENN7019 FSS139 FSS139] marking S139 IT02300 FSS139 S139

    transistors ai 585

    Abstract: No abstract text available
    Text: FSS130D, FSS130R S em iconductor 11 A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description . 11 A, 100V, rDS 0 N = 0.210£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSS130D, FSS130R O-257AA MIL-S-19500 transistors ai 585

    Untitled

    Abstract: No abstract text available
    Text: j Ordering number : ENN7019 P-Channel Silicon MOSFET FSS139 IS A ß ro i Load Switching Applications Package Dimensions Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. u n it: mm 2116 [FSS139] MM □ □ 1 □ 1 : Source 2 : Source


    OCR Scan     		PDF ENN7019 FSS139 FSS139]

    Untitled

    Abstract: No abstract text available
    Text: h a r S E M I C O N D U C T O R FSS130D, FSS130R " Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 11 A, 100V, rDS ON = 0.210£i TO-257AA • Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) • Single Event


    OCR Scan     		PDF FSS130D, FSS130R O-257AA 1-800-4-HARRIS

    4431 mosfet

    Abstract: No abstract text available
    Text: S JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 11A,100V,rDS ON = 0.21012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSS130R4 JANSR2N7399 MIL-STD-750, MIL-S-19500, 100ms; 500ms; 4431 mosfet

    fss130

    Abstract: No abstract text available
    Text: ¡BMí*« ? FSS130D, FSS130R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June1997 Features Package • 11 A, 100V, rDS ON = 0.210Í2 TO-257AA Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) Single Event Safe Operating Area Curve for Single Event Effects


    OCR Scan     		PDF e1997 FSS130D, FSS130R O-257AA 36MeV/mg/cm2 1-800-4-HARRIS fss130

    Untitled

    Abstract: No abstract text available
    Text: FSS130D, FSS130R 11 A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 11 A, 100V, rDS 0N = 0.21 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSS130D, FSS130R 36MeV/mg/cm2 MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6919 P-Channel Silicon MOSFET FSS133 ISAÈÊYO Load Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. . 2.5V drive. unit : mm 2116 Specifications Absolute Maximum Ratings at Ta=25°C


    OCR Scan     		PDF ENN6919 FSS133 1200mm2X0

    Untitled

    Abstract: No abstract text available
    Text: j Ordering number : ENN6786 j P-Channel Silicon MOSFET FSS131 Load Switching Applications Features Package Dimensions unit : mm 2116 • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. [FSS131] 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain


    OCR Scan     		PDF ENN6786 FSS131 FSS131] 1200m

    Untitled

    Abstract: No abstract text available
    Text: FSS13A0D, FSS13A0R Ju ly 1999 D ata S h eet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSS13A0D, FSS13A0R 1-800-4-HARRIS