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    Rochester Electronics LLC FSS234-TL-E

    NCH 4V DRIVE SERIES
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    DigiKey FSS234-TL-E Bulk 9,000 307
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    Fix Supply BULK-FS-S2-32

    Grade S2-32 Felt Sheet - 1/2" Th
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    DigiKey BULK-FS-S2-32 Bulk 9 1
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    Fix Supply BULK-FS-S2-30

    Grade S2-32 Felt Sheet - 3/8" Th
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    DigiKey BULK-FS-S2-30 Bulk 8 1
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    Fix Supply BULK-FS-S2-3

    Grade S2-20 Felt Sheet - 1/4" Th
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    DigiKey BULK-FS-S2-3 Bulk 6 1
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    Fix Supply BULK-FS-S2-31

    Grade S2-32 Felt Sheet - 1/2" Th
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    DigiKey BULK-FS-S2-31 Bulk 2 1
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    FSS23 Datasheets (73)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FSS23 Fagor 2 Amp. Surface Mounted Schottky Barrier Rectifier Original PDF
    FSS23 Fagor 30 V, 2 A surface mounted schottky barrier rectifier Original PDF
    FSS230D Intersil 8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS230D1 Fairchild Semiconductor 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSS230D1 Fairchild Semiconductor 8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS230D1 Intersil 8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS230D3 Fairchild Semiconductor 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSS230D3 Intersil 8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS230R Intersil 8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS230R1 Fairchild Semiconductor 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSS230R1 Intersil 8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS230R3 Fairchild Semiconductor 8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS230R3 Fairchild Semiconductor 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSS230R3 Intersil 8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS230R4 Fairchild Semiconductor 8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS230R4 Fairchild Semiconductor 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSS230R4 Intersil 8A, 200V, 0.440 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSS230R4 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    FSS232 Sanyo Semiconductor Lithium-ion battery systems, notebook personal computers, A-V equipment, hand-held equipment Original PDF
    FSS234 Sanyo Semiconductor Original PDF

    FSS23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3
    Text: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSS23A4D, FSS23A4R Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3

    1E14

    Abstract: 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1
    Text: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Formerly available as type TA17698. • 7A, 250V, rDS ON = 0.460Ω Description • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event


    Original     		PDF FSS23A4D, FSS23A4R TA17698. 36MeV/mg/cm2 1E14 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1

    1E14

    Abstract: 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3
    Text: FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSS230D, FSS230R 1E14 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3

    1E14

    Abstract: 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3
    Text: FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 6A, 250V, rDS ON = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSS234D, FSS234R 1E14 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3

    1E14

    Abstract: 2E12 FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R FSS23A0R1 FSS23A0R3
    Text: FSS23A0D, FSS23A0R Data Sheet 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSS23A0D, FSS23A0R 1E14 2E12 FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R FSS23A0R1 FSS23A0R3

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSS234R4 JANSR2N7401
    Text: JANSR2N7401 August 1998 Formerly FSS234R4 [ /Title JANS R2N74 01 /Subject (6A, 250V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Rad Hard, NChannel Power MOSFET) /Creator () 6A, 250V, 0.600 Ohm, Rad Hard,


    Original     		PDF JANSR2N7401 FSS234R4 R2N74 Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS234R4 JANSR2N7401

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSS230R4 JANSR2N7400 igss
    Text: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 00 /Subject (8A, 200V, 0.440 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 200V, 0.440


    Original     		PDF JANSR2N7400 FSS230R4 R2N74 Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS230R4 JANSR2N7400 igss

    FSS232

    Abstract: S232
    Text: Ordering number:ENN6359 N-Channel Silicon MOSFET FSS232 Load Switching Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS232] 5 4 1 : Source 2 : Source 0.2 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain


    Original     		PDF ENN6359 FSS232 FSS232] FSS232 S232

    FSS238

    Abstract: S238 PG2520
    Text: Ordering number:ENN6401 N-Channel Silicon MOSFET FSS238 Load Switching Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS238] 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source 2 : Source 3 : Source 4 : Gate


    Original     		PDF ENN6401 FSS238 FSS238] FSS238 S238 PG2520

    schottky diode 100A

    Abstract: DO214 rectifier 50a Schottky Diode 50V 3A 50a rectifier circuit 50A schottky rectifier DO214-AB transistor 100a Schottky rectifier 3A 60v diode DO214
    Text: QUICK GUIDE Schottky Rectifier SCHOTTKY RECTIFIERS (SURFACE MOUNTED DEVICES) IF IFSM 20V 30V 40V 50V 60V FSS1 1A 40A FSS12 FSS13 FSS14 FSS15* FSS16* 0.50V 0.75V* DO214-AC FSS2 2A 50A FSS22 FSS23 FSS24 FSS25* FSS26* 0.50V 0.70V* DO214-AA FSS3 3A 100A FSS32


    Original     		PDF FSS12 FSS13 FSS14 FSS15* FSS16* DO214-AC FSS22 FSS23 FSS24 FSS25* schottky diode 100A DO214 rectifier 50a Schottky Diode 50V 3A 50a rectifier circuit 50A schottky rectifier DO214-AB transistor 100a Schottky rectifier 3A 60v diode DO214

    S234

    Abstract: No abstract text available
    Text: FSS234 N- Channel MOS Silicon FET DC-DC Converter Use TENTATIVE Features and Applications • Very Low ON-state resistance. • 4V drive. • High Speed Switching. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage VDSS Gate to Source Voltage VGSS


    Original     		PDF FSS234 1200m FSS234 990804TM2fXHD S234

    1E14

    Abstract: 2E12 FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R FSS23A0R1 FSS23A0R3 Rad Hard in Fairchild for MOSFET
    Text: FSS23A0D, FSS23A0R Data Sheet 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSS23A0D, FSS23A0R 1E14 2E12 FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R FSS23A0R1 FSS23A0R3 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: FSS23A4D, FSS23A4R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSS23A4D, FSS23A4R 1-800-4-HARRIS

    FSS232

    Abstract: S232
    Text: Ordering number : ENN6359 SANYO Semiconductors DATA SHEET FSS232 N-Channel Silicon MOSFET Load Switching Applications Features • Low ON resistance. · 4V drive. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage


    Original     		PDF ENN6359 FSS232 1000mm2 FSS232 S232

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7401 January 2002 Formerly FSS234R4 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF JANSR2N7401 FSS234R4

    1E14

    Abstract: 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3 relay 12v 200 ohm Rad Hard in Fairchild for MOSFET
    Text: FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSS230D, FSS230R 1E14 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3 relay 12v 200 ohm Rad Hard in Fairchild for MOSFET

    s237 2.5 m

    Abstract: TA-228 FSS237 S237
    Text: Ordering number:ENN6149 N-Channel Silicon MOSFET FSS237 Load Switching Applications Features Package Dimensions • Ultralow ON resistance. · 2.5V drive. unit:mm 2116 [FSS237] 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source 2 : Source 3 : Source


    Original     		PDF ENN6149 FSS237 FSS237] s237 2.5 m TA-228 FSS237 S237

    1E14

    Abstract: 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3
    Text: FSS23A4D, FSS23A4R 7A, 250V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSS23A4D, FSS23A4R 1E14 2E12 FSS23A4D FSS23A4D1 FSS23A4D3 FSS23A4R FSS23A4R1 FSS23A4R3

    r4373

    Abstract: No abstract text available
    Text: JANSR2N7400 33 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 200V, rDS 0N = 0.4400 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSS230R4 JANSR2N7400 MIL-STD-750, MIL-S-19500, 500ms; r4373

    fss230

    Abstract: S230D
    Text: 33 FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rDS ON = 0.440C1 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF 440C1 FSS230D, FSS230R fss230 S230D

    Untitled

    Abstract: No abstract text available
    Text: O FSS234D, FSS234R W ^ R R is 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space appli­


    OCR Scan     		PDF FSS234D, FSS234R MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    Untitled

    Abstract: No abstract text available
    Text: FSS230D, FSS230R S em iconductor 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 8A, 200V, rQs^oN = 0.440£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSS230D, FSS230R O-257AA MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: FSS230D, FSS230R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features • 8A, 200V, Package = 0.440Q TO-257AA • Total Dose - Meets Pre-Rad Specifications to 100K RAD Si • Single Event - Safe Operating Area Curve for Single Event Effects


    OCR Scan     		PDF FSS230D, FSS230R 36MeV/mg/cm2 O-257AA to1E14 1-800-4-HARRIS

    FSS234

    Abstract: 1E14 2E12 FSS234R4 JANSR2N7401 T0-257AA VGS-12V
    Text: JANSR2N7401 H A R R IS S E M I C O N D U C T O R Formerly FSS234R4 August 1998 File Number 4571 Features 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET • 6A , 2 50V , rp5^oN = 0 .6 0 0 £ i T h e D iscrete Products O peratio n of H arris S em ico n du cto r


    OCR Scan     		PDF FSS234R4 1-800-4-HARRIS FSS234 1E14 2E12 FSS234R4 JANSR2N7401 T0-257AA VGS-12V