Untitled
Abstract: No abstract text available
Text: ECH8671 Ordering number : ENA1456A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8671 General-Purpose Switching Device Applications Features • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Specifications
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ECH8671
ENA1456A
1200mm2Ã
A1456-7/7
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TND017MP
Abstract: TND017SW tA318
Text: Ordering number:ENN6481A ExPD Excellent Power Device TND017MP, TND017SW Lowside Power Switch Lamp, Solenoid, and Motor-Driving Applications Package Dimensions Unit:mm 2145 Unit:mm 2181 [TND017MP] [TND017SW] 8 6.0 5.0 5 3.0 0.5 0.6 6.0 4.4 0.3 4.7 4 1.5 14.0
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ENN6481A
TND017MP,
TND017SW
TND017MP]
TND017SW]
TND017SW
TND017MP
tA318
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1436A ECH8674 P-Channel Power MOSFET http://onsemi.com –12V, –5A, 41mΩ, Single ECH8 Features • • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode in Specifications
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ENA1436A
ECH8674
1200mm2Ã
A1436-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2185B ECH8690 Power MOSFET 60V, 4.7A, 55mΩ -60V, -3.5A, 94mΩ Complememtary Dual ECH8 http://onsemi.com Features • On-State Resistance Nch:RDS on 1=42mΩ(typ.) Pch:RDS(on)1=73mΩ(typ.) • 4V drive • Nch+Pch MOSFET • Protection diode in
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ENA2185B
ECH8690
A2185-8/8
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0963B MCH6321 P-Channel Power MOSFET –20V, –4A, 83mΩ, Single MCPH6 http://onsemi.com Features • 1.8V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage
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ENA0963B
MCH6321
1200mm2Ã
A0963-5/5
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A1667
Abstract: ENA1667A mosfet marking ke
Text: EMH1405 Ordering number : ENA1667A SANYO Semiconductors DATA SHEET EMH1405 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • ON-resistance RDS on 1=14mΩ(typ) 4V drive Halogen free compliance Protection diode in
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ENA1667A
EMH1405
PW10s,
1200mm2
A1667-7/7
A1667
ENA1667A
mosfet marking ke
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a0923
Abstract: No abstract text available
Text: CPH6337 Ordering number : ENA0923A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6337 General-Purpose Switching Device Applications Features • • Ultrahigh-speed switching 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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ENA0923A
CPH6337
PW10s,
1200mm2
A0923-7/7
a0923
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A1776
Abstract: No abstract text available
Text: MCH6437 Ordering number : ENA1776 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6437 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=18mΩ (typ.) 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1776
MCH6437
PW10s,
1200mm2
022A-009
A1776-4/4
A1776
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FSS212
Abstract: No abstract text available
Text: Ordering number:ENN5933 N-Channel Silicon MOSFET FSS212 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS212] 5 4 1 : Source 2 : Source 0.2 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain
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ENN5933
FSS212
FSS212]
FSS212
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marking s104
Abstract: s104 diode S104 FSS104
Text: Ordering number:ENN5991A P-Channel Silicon MOSFET FSS104 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS104] 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source
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ENN5991A
FSS104
FSS104]
marking s104
s104 diode
S104
FSS104
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1715A EMH1307 P-Channel Power MOSFET http://onsemi.com –20V, –6.5A, 26mΩ, Single EMH8 Features • • • ON-resistance RDS on 1 : 20mΩ(typ.) 1.8V drive Protection diode in • • Input Capacitance Ciss=1100pF(typ.) Halogen free compliance
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ENA1715A
EMH1307
1100pF
PW10s,
1200mm2
A1715-7/7
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VEC2818
Abstract: No abstract text available
Text: VEC2818 注文コード No. N A 0 5 7 7 三洋半導体データシート N VEC2818 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・DC / DC コンバータ用。
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VEC2818
1200mm2
11707PE
TC-00000470
A0577-1/5
IT08571
IT08572
IT03090
VEC2818
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A1358
Abstract: ECH8660 pch 100v ech8 A1358-2
Text: ECH8660 注文コード No. N A 1 3 5 8 三洋半導体データシート N ECH8660 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ 低オン抵抗超高速スイッチングの N チャネルおよび P チャネル MOS 型電解効果トランジスタを 1 パッケージ
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ECH8660
1200mm2
--10V
IT14194
--30A
PW10s
1200mm2
IT14196
A1358
ECH8660
pch 100v ech8
A1358-2
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EMH1303
Abstract: A06611 A0661
Text: EMH1303 注文コード No. N A 0 6 6 1 三洋半導体データシート N EMH1303 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・1.8V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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EMH1303
1200mm2
IT12944
--28A
PW10s
1200mm2
IT13034
IT12946
A0661-4/4
EMH1303
A06611
A0661
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1456A ECH8671 P-Channel Power MOSFET http://onsemi.com –12V, –3.5A, 77mΩ, Dual ECH8 Features • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1456A
ECH8671
PW10s,
1200mm2
A1456-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0661A EMH1303 P-Channel Power MOSFET http://onsemi.com –12V, –7A, 23mΩ, Single EMH8 Features • • • Low ON-resistance 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage
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ENA0661A
EMH1303
PW10s,
1200mm2
A0661-7/7
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FSS238
Abstract: S238 PG2520
Text: Ordering number:ENN6401 N-Channel Silicon MOSFET FSS238 Load Switching Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2116 [FSS238] 5 4 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source 2 : Source 3 : Source 4 : Gate
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ENN6401
FSS238
FSS238]
FSS238
S238
PG2520
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1710B ECH8657 N-Channel Power MOSFET http://onsemi.com 35V, 4.5A, 59mΩ, Dual ECH8 Features • • • 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage
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ENA1710B
ECH8657
PW10s,
1200mm2
A1710-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1826A CPH6443 N-Channel Power MOSFET http://onsemi.com 35V, 6A, 37mΩ, Single CPH6 Features • • • • ON-resistance RDS on 1=28mΩ(typ.) 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1826A
CPH6443
PW10s,
1200mm2
A1826-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1776A MCH6437 N-Channel Power MOSFET http://onsemi.com 20V, 7A, 24mΩ, Single MCPH6 Features • • • ON-resistance RDS on 1=18mΩ (typ.) 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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ENA1776A
MCH6437
PW10s,
1200mm2
A1776-7/7
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2SJ468
Abstract: ITR00563 ITR00564
Text: 注文コード No. N 5 4 9 3 A 2SJ468 No. 5 4 9 3 A 52599 新 開発速報 No. ※ 5493 とさしかえてください。 2SJ468 特長 P チャネル MOS 形シリコン電界効果トランジスタ DC-DC コンバータ用超高速スイッチング ・低オン抵抗。
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2SJ468
1200mm2
1200mm2
ITR00563
ITR00564
2SJ468
ITR00563
ITR00564
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A1776
Abstract: transistor A1776 datasheets MCH6437 SC82
Text: MCH6437 Ordering number : ENA1776 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6437 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=18mΩ (typ.) 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C
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MCH6437
ENA1776
PW10s,
1200mm2
A1776-4/4
A1776
transistor A1776 datasheets
MCH6437
SC82
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CPH6413
Abstract: No abstract text available
Text: 注文コード No. N 7 3 1 9 CPH6413 三洋半導体データシート N CPH6413 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・2.5V 駆動。
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CPH6413
1200mm2
1200mm2
IT03623
IT03624
CPH6413
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W356
Abstract: FW356 IT06079 V145
Text: FW356 注文コード No. N 7 7 4 3 三洋半導体データシート N FW356 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス用 特長 ・モータドライブインバータ用。
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FW356
1200mm2
IT06086
--14A
--30V
IT06089
IT06090
W356
FW356
IT06079
V145
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