2E12
Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1
Text: FSS13A0D, FSS13A0R TM Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
|
Original
|
PDF
|
FSS13A0D,
FSS13A0R
2E12
FSS13A0D
FSS13A0D1
FSS13A0D3
FSS13A0R
FSS13A0R1
|
2E12
Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 Rad Hard in Fairchild for MOSFET
Text: FSS13A0D, FSS13A0R Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
|
Original
|
PDF
|
FSS13A0D,
FSS13A0R
2E12
FSS13A0D
FSS13A0D1
FSS13A0D3
FSS13A0R
FSS13A0R1
Rad Hard in Fairchild for MOSFET
|
2E12
Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 FSS13A0R3 Rad hard for Harris
Text: FSS13A0D, FSS13A0R Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
|
Original
|
PDF
|
FSS13A0D,
FSS13A0R
1-800-4-HARRIS
2E12
FSS13A0D
FSS13A0D1
FSS13A0D3
FSS13A0R
FSS13A0R1
FSS13A0R3
Rad hard for Harris
|
2E12
Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1
Text: FSS13A0D, FSS13A0R Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
|
Original
|
PDF
|
FSS13A0D,
FSS13A0R
2E12
FSS13A0D
FSS13A0D1
FSS13A0D3
FSS13A0R
FSS13A0R1
|
FSS13AOD
Abstract: No abstract text available
Text: FSS13AOD, FSS13AOR TO-257AA 3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE A INCHES ØP E A1 MIN MAX MIN MAX NOTES A 0.190 0.200 4.83 5.08 - A1 0.035 0.045 0.89 1.14 - Q H1 D 0.065 R TYP. L1 Øb1 L Øb 0.025 0.035 0.64 0.88 2, 3 Øb1 0.060 0.090 1.53 2.28 -
|
Original
|
PDF
|
FSS13AOD,
FSS13AOR
O-257AA
O-257AA
FSS13A0D1
FSS13A0D3
FSS13A0R1
FSS13A0R3
FSS13A0R4
FSS13AOD
|
Untitled
Abstract: No abstract text available
Text: FSS13A0D, FSS13A0R Ju ly 1999 D ata S h eet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
|
OCR Scan
|
PDF
|
FSS13A0D,
FSS13A0R
1-800-4-HARRIS
|
S2E12
Abstract: S3E9
Text: iH A R R is FSS13A0D, FSS13A0R S E M I C O N D U C T O R Radiation Hardened, SEG R Resistant N-Channel Power MOSFETs February 1998 Features • Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
|
OCR Scan
|
PDF
|
FSS13A0D,
FSS13A0R
1-800-4-HARRIS
S2E12
S3E9
|
Untitled
Abstract: No abstract text available
Text: ¡lì h a r r is U U F S S 13A 0 D , FSS1 S E M I C O N D U C T O R 12A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 12A, 100V, rOS ON = 0.1700 The Discrete Products Operation of Harris Semiconductor
|
OCR Scan
|
PDF
|
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
|
