DSA0037427
Abstract: SEMH10
Text: SEMH10 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated Transistors 5 3 with good matching in one package 6 2 • Built in bias resistor (R1 =2.2kΩ, R2=47kΩ)
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SEMH10
EHA07174
OT666
Feb-09-2004
DSA0037427
SEMH10
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marking WM
Abstract: SEMB11 DSA0037426
Text: SEMB11 PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated Transistors 5 3 with good matching in one package 6 2 • Built in bias resistor (R1 =10kΩ, R2 =10kΩ)
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SEMB11
EHA07173
OT666
Feb-09-2004
marking WM
SEMB11
DSA0037426
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h569-445
Abstract: ED83368-30 CC848846287 BDFB H569445 CC109144812 PBM7900 current monitor panel meter PBM7600FRA 1-800-THE-1PWR
Text: Smart Distribution Monitor – VIM1 Adding Enhancements to BDFB/BDCBB Management The VIM1 Smart Distribution Monitor replaces the digital meters used on Lineage Power Battery Distribution Fuse Bays BDFB and Battery Distribution Circuit Breaker Bays (BDCBB). Traditional
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Feb09
h569-445
ED83368-30
CC848846287
BDFB
H569445
CC109144812
PBM7900
current monitor panel meter
PBM7600FRA
1-800-THE-1PWR
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2030R
Abstract: No abstract text available
Text: BF 2030R Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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2030R
EHA07461
OT-143R
Feb-09-2001
2030R
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A1015
Abstract: NMEA GPS microsoft ballpoint mouse ballpoint NMEA GPS usb A1035-H A1015 equivalent gps mouse Receiver service manual schematics tegra
Text: GPS Evaluation Kit EVA1035-E A Description of the Evaluation Board for Vincotech’s GPS Receiver / Smart Antenna Module A1035-E User’s Manual Version 1.0 Hardware Revision 01 Revision History Rev. Date 1.0 02-20-09 Description Initial Release, based on EVA1082-A
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EVA1035-E
A1035-E
EVA1082-A
Feb-09
EVA1035-E
A1015
NMEA GPS
microsoft ballpoint mouse
ballpoint
NMEA GPS usb
A1035-H
A1015 equivalent
gps mouse Receiver
service manual schematics
tegra
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A1035-H
Abstract: vincotech GPS Antenna gps antenna external gps receiver UART gps A1080 EVA1035-H NMEA-0183
Text: GPS Evaluation Kit EVA1035-H A Description of the Evaluation Board for Vincotech’s GPS Receiver / Smart Antenna Module A1035-H User’s Manual Version 1.0 Hardware Revision 01 Revision History Rev. 0.1 1.0 Date 12-30-08 01-26-09 Description Initial Draft, based on EVA1084-A and A1035-H manuals
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EVA1035-H
A1035-H
EVA1084-A
A1035-H
Feb-09
EVA1035-H
vincotech
GPS Antenna
gps antenna external
gps receiver
UART gps
A1080
NMEA-0183
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Untitled
Abstract: No abstract text available
Text: BF 2030 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up to 1GHz 4 Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05178
EHA07461
OT-143
Feb-09-2001
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LS2533
Abstract: LS100 LS150 LS25 LS50 LS75 LS15-05 LS150-12
Text: • High MTBF up to 900 000 hours • Superior operating temperatue performance up to 70°C • Very High efficiency up to 87% • Very Low Cost • Compact • Withstands 300VAC surges 5s • Three Year Warranty Key Market Segments & Applications Test & Measurement
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300VAC
800-LAMBDA-4
Feb09
LS2533
LS100
LS150
LS25
LS50
LS75
LS15-05
LS150-12
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LAMBDA
Abstract: CE-1050 lambda 128 Lambda diode PEAK tray drawing
Text: • 9 to 26V Input • 3.3 to 12V Outputs • Surface Mount • Low 5.5mm Profile • Non Isolated Output Key Market Segments & Applications Telecommunications Datacom Instrumentation CE-1050 Series 1.2 - 2.5A Point of Load Converter CE-1050 Features and Benefits
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CE-1050
Feb09
LAMBDA
lambda 128
Lambda diode
PEAK tray drawing
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CC10-2412DF-E
Abstract: cc10-2403sf-e CC1R5-4805SF-E cc10 lambda CC1R5-1212SF-E CC1R5-2403SF-E CC6-2412DF CC15 cc25-2405sf-e
Text: • Compact Footprint/Low Profile • Through Hole or SMT Versions • 5V, 12V, 24V & 48V Inputs • 3.3 to 30V1 Single, +12 to 15V Dual Outputs • Output Voltage Adjustment • Input - Output Isolation • RoHS Compliant • 5 Year Warranty Key Market Segments & Applications
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Feb09
CC10-2412DF-E
cc10-2403sf-e
CC1R5-4805SF-E
cc10 lambda
CC1R5-1212SF-E
CC1R5-2403SF-E
CC6-2412DF
CC15
cc25-2405sf-e
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HFR8S12
Abstract: No abstract text available
Text: HFR8S12 Glass Passivated Hyperfast Recovery Rectifier Voltage Range 1200 V Current 8.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low noise ¬ Trr = 25ns ¬ Low reverse leakage current ¬ High voltage super FRD ¬ PFC application TO-220AC .057 1.45
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HFR8S12
O-220AC
MIL-STD-202
FEB-09
HFR8S12
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DSA0037428
Abstract: SEMH11
Text: SEMH11 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated Transistors 5 3 with good matching in one package 6 2 • Built in bias resistor (R1 =10kΩ, R2 =10kΩ)
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SEMH11
EHA07174
OT666
Feb-09-2004
DSA0037428
SEMH11
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HFR8S12
Abstract: No abstract text available
Text: HFR8S12F Glass Passivated Hyperfast Recovery Rectifier Voltage Range 1200 V Current 8.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low noise ¬ Trr = 25ns ¬ Low reverse leakage current ¬ High voltage super FRD ¬ PFC application ITO-220AC 2
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HFR8S12F
ITO-220AC
MIL-STD-202
FEB-09
HFR8S12
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Untitled
Abstract: No abstract text available
Text: HFR8L06 Glass Passivated Hyperfast Recovery Rectifier Voltage Range 600 V Current 8.0 Ampere Features ¬ Fast switching for high efficiency ¬ Low noise ¬ Low VF ¬ Low reverse leakage current ¬ High voltage super FRD ¬ PFC application TO-220AC .057 1.45
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HFR8L06
O-220AC
MIL-STD-202
50mVp-p
FEB-09
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-120201 xN60 MOSFET Ordering Number Change Issue Date Feb-09-2012 Page 1 of 1 變更主旨 TITLE : xN60系列取消銷售料號之檔次標示。 Remove bin code of ordering number for xN60 Power MOSFET.
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IC-PPCN-120201
Feb-09-2012
QR-0205-01)
QR-0205-01,
QR-0205-01
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R596
Abstract: micromechanical
Text: RADIALL TECHNICAL DATA SHEET R 596 - - - - - - S SM MTT P Poow weerr M Miiccrroo-S SP PD DTT w wiitthh 1100 G GH Hzz ccaappaabbiilliittiieess Issue : Feb-09-2006 An innovative and original « micro-mechanical » design allows the R596 SMT micro-relay to bring together
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Feb-09-2006
R596
micromechanical
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V23993
Abstract: A1035 EVA1035-H gps m 89 pin configuration V23993EVA1035E A1082 PEAK tray drawing gps nmea interface in atomic clock sirf gps GPS sirf
Text: GPS Receiver A1035-E A Description of Vincotech’s GPS Smart Antenna Module A1035-E User’s Manual Version 1.3 Hardware Revision 01 Revision History Rev. 1.0 1.1 1.2 1.3 Date 05-19-08 06-30-08 11-03-08 02-18-09 mm-dd-yy V1.3 – Feb-09 Description Initial Draft – preliminary information
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A1035-E
Feb-09
A1035-E.
EVA1035-E
V23993
A1035
EVA1035-H
gps m 89 pin configuration
V23993EVA1035E
A1082
PEAK tray drawing
gps nmea interface in atomic clock
sirf gps
GPS sirf
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MARKING WJ
Abstract: DSA0037428
Text: SEMH9 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated Transistors 5 3 with good matching in one package 6 2 • Built in bias resistor (R1 =10kΩ, R2=47kΩ)
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EHA07174
OT666
Feb-09-2004
MARKING WJ
DSA0037428
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EFE400-24-CNMDS
Abstract: EFE300 EFE300-12-CNMDS EN61000-3-3 U2Y004J EN61000-4-12 12v 400W
Text: • High Efficiency • 5 in x 3 in / 6 in x 3 in footprint • No minimum load • Fits 1U applications • 400/530 Watts peak power for 10 seconds • 3 Year Warranty Key Market Segments & Applications EFE300 / EFE400 300/400 Watts, Ultra High Density AC-DC, digital power solution
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EFE300
EFE400
264Vac
350Vdc
EN61000-3-2
800-LAMBDA-4
Feb09
EFE400
EFE400-24-CNMDS
EFE300-12-CNMDS
EN61000-3-3
U2Y004J
EN61000-4-12
12v 400W
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ACS 086
Abstract: germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz
Text: BFP 620 NPN Silicon Germanium RF Transistor Preliminary data 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz
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VPS05605
OT-343
-j100
Feb-09-2000
ACS 086
germanium transistor ac 128
acs sot-343
4ghz s parameters transistor
s parameters 4ghz
fa 5571
TRANSISTOR NPN 5GHz
SOT 343 MARKING BF
transistor k 620
silicon rf transistor s parameters up to 4ghz
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC AUG ,2006. ALL RIGHTS RESERVED. R E V IS IO N S DW p LTR DESCRIPTION B D DATE DWN B.W s .c 1 1 FEB09 REVISED ECR—0 9 - 0 0 2 8 2 1 APVD D NOTES:
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FEB09
850PCS)
31MAR2000
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XFGIB100
Abstract: No abstract text available
Text: S ch e m atic: LOWER ROW UPPER ROW E le ctric al S p e c i f i c a t i o n s : 25®C ISOLATION: 1500 Vrms TURNS RATIO: PRl/SEC 1CT:1CT ±2% OCL: 350uH MIN lOOKHz 100m V BmADC Rise Time: 1.75ns Max. INSERTION LOSS: -I.OdB MAX SIM Hz-IOO M Hz -1.5dB MAX 0 1 0 0 —125MHz
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350uH
100mV
1MHz-100MHz
125MHz
-16dB
1-30MHz
40MHz
50MHz
-10dB
100MHz
XFGIB100
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