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    DSEI12 Price and Stock

    IXYS Corporation DSEI12-12A

    DIODE GEN PURP 1.2KV 11A TO220AC
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    DigiKey DSEI12-12A Tube 4,885 1
    • 1 $2.92
    • 10 $2.92
    • 100 $1.9329
    • 1000 $1.3877
    • 10000 $1.26875
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    Mouser Electronics DSEI12-12A 564
    • 1 $2.93
    • 10 $2.35
    • 100 $1.94
    • 1000 $1.3
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    Bristol Electronics DSEI12-12A 146
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    Quest Components DSEI12-12A 70
    • 1 $3.4104
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    • 100 $1.8757
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    DSEI12-12A 39
    • 1 $2.31
    • 10 $1.848
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    TTI DSEI12-12A Tube 1,400 50
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    TME DSEI12-12A 184 1
    • 1 $2.77
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    New Advantage Corporation DSEI12-12A 700 1
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    IXYS Corporation DSEI120-06A

    DIODE GEN PURP 600V 77A TO247AD
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    DigiKey DSEI120-06A Tube 371 1
    • 1 $10.85
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    Mouser Electronics DSEI120-06A 2,128
    • 1 $10.85
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    • 100 $8.2
    • 1000 $7.12
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    Newark DSEI120-06A Bulk 1
    • 1 $11.28
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    Bristol Electronics DSEI120-06A 2
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    TTI DSEI120-06A Tube 1,860 30
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    TME DSEI120-06A 162 1
    • 1 $12.67
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    Chip-Germany GmbH DSEI120-06A 2,242
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    New Advantage Corporation DSEI120-06A 851 1
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    IXYS Corporation DSEI120-12A

    DIODE GEN PURP 1.2KV 75A TO247AD
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    DigiKey DSEI120-12A Tube 115 1
    • 1 $9.85
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    • 100 $8.257
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    Mouser Electronics DSEI120-12A 4,151
    • 1 $9.7
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    Newark DSEI120-12A Bulk 26 1
    • 1 $14.56
    • 10 $13.38
    • 100 $12.83
    • 1000 $10.75
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    TTI DSEI120-12A Tube 300
    • 1 -
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    TME DSEI120-12A 277 1
    • 1 $13.25
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    Chip 1 Exchange DSEI120-12A 15,587
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    New Advantage Corporation DSEI120-12A 13,680 1
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    IXYS Corporation DSEI12-06A

    DIODE GEN PURP 600V 14A TO220AC
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    DigiKey DSEI12-06A Tube 81 1
    • 1 $2.74
    • 10 $2.74
    • 100 $1.8143
    • 1000 $1.30258
    • 10000 $1.19093
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    Mouser Electronics DSEI12-06A 655
    • 1 $2.8
    • 10 $2.25
    • 100 $1.86
    • 1000 $1.23
    • 10000 $1.19
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    Quest Components DSEI12-06A 269
    • 1 $2.2125
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    • 100 $2.2125
    • 1000 $1.1063
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    TTI DSEI12-06A Tube 650 50
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    • 1000 $1.15
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    TME DSEI12-06A 1
    • 1 $2.59
    • 10 $2.19
    • 100 $1.76
    • 1000 $1.43
    • 10000 $1.43
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    New Advantage Corporation DSEI12-06A 950 1
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    • 100 $1.6
    • 1000 $1.49
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    IXYS Corporation DSEI120-12AZ-TUB

    DIODE GP 1.2KV 109A TO268AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DSEI120-12AZ-TUB Tube 60 1
    • 1 $13.56
    • 10 $13.56
    • 100 $10.97633
    • 1000 $9.36225
    • 10000 $8.58745
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    Mouser Electronics DSEI120-12AZ-TUB 60
    • 1 $13.55
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    • 1000 $9.36
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    TTI DSEI120-12AZ-TUB Tube 30
    • 1 -
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    • 100 $9.84
    • 1000 $8.91
    • 10000 $8.49
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    TME DSEI120-12AZ-TUB 30 1
    • 1 $15.79
    • 10 $12.56
    • 100 $11.34
    • 1000 $11.34
    • 10000 $11.34
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    New Advantage Corporation DSEI120-12AZ-TUB 200 1
    • 1 -
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    • 100 $14.88
    • 1000 $13.88
    • 10000 $13.88
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    Find more DSEI12 price and stock on Findchips.com

    DSEI12 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DSEI12 IXYS Fast Recovery Epitaxial Diode (FRED) Original PDF
    DSEI120 IXYS Fast Recovery Epitaxial Diode (FRED) Original PDF
    DSEI120-06A IXYS Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE HI PERF 600V 77A TO247AD Original PDF
    DSEI120-06A IXYS Fast Recovery Epitaxial Diode (FRED) Original PDF
    DSEI120-12A IXYS Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE HI PERF 1.2KV 75A TO247AD Original PDF
    DSEI120-12A IXYS 1200V fast recovery epitaxial diode (FRED) Original PDF
    DSEI12-04A IXYS Fast Recovery Epitaxial Diode Scan PDF
    DSEI12-05A IXYS Fast Recovery Epitaxial Diode Scan PDF
    DSEI12-06A IXYS Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 600V 14A TO220AC Original PDF
    DSEI12-06A IXYS Fast Recovery Epitaxial Diode (FRED) Original PDF
    DSEI12-06A IXYS Fast Recovery Epitaxial Diode Scan PDF
    DSEI12-08A IXYS Fast Recovery Epitaxial Diode Scan PDF
    DSEI12-10A IXYS Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 1KV 12A TO220AC Original PDF
    DSEI12-10A IXYS 1000V fast recovery epitaxial diode (FRED) Original PDF
    DSEI12-10A IXYS Fast Recovery Epitaxial Diode Scan PDF
    DSEI1212 IXYS Original PDF
    DSEI12-12A IXYS Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 1.2KV 11A TO220AC Original PDF
    DSEI12-12A IXYS Fast Recovery Epitaxial Diode (FRED) Original PDF

    DSEI12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DSEI120-12A

    Abstract: 1200v diode to247
    Text: DSEI120-12A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAVM = 109 A VRRM = 1200 V trr = 40 ns Type A C DSEI 120-12A TO-247 AD C A  C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFAV ‚ IFRM TVJ = TVJM TC = 60°C; rectangular, d = 0.5


    Original     		PDF DSEI120-12A 20-12A O-247 20121114a DSEI120-12A 1200v diode to247

    DSEI120-06A

    Abstract: DSEI12006A dsei-120-06a dsei 20-12 DSEI 120-06A DSEI120
    Text: DSEI120-06A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 IFAVM = 126 A VRRM = 600 V trr = 35 ns Type A C DSEI 120-06A TO-247 AD C A  C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFAV ‚ IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5


    Original     		PDF DSEI120-06A 20-06A O-247 20121114a DSEI120-06A DSEI12006A dsei-120-06a dsei 20-12 DSEI 120-06A DSEI120

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    mosfet 600V 10A logic level

    Abstract: IXFP4N100Q IXDD414 IX2R11P7 High Side dsei12 DSEI12-10A IX2R11 IX2R11S3 IXDD
    Text: Preliminary Data Sheet IX2R11 2A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX2R11 IX2R11 HCPL-314J DSEI12-10A IXDD414 IXFP4N100Q -600V IX2R11S3 mosfet 600V 10A logic level IXFP4N100Q IXDD414 IX2R11P7 High Side dsei12 DSEI12-10A IXDD

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IXCP10M90S

    Abstract: IX2R11P7 10M90s IXTH14N60P 78L15 DSEI12-10A IX2R11 IX2R11S3 IXDD414 IXCP
    Text: IX2R11 IX2R11 500 Volt, 2 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap power supply along with a Low Side Driver. • Fully operational to 500V • ± 50V/ns dV/dt immunity


    Original     		PDF IX2R11 IX2R11 IX2R11S3 IX2R11P7 Edisonstrasse15 D-68623; IXCP10M90S 10M90s IXTH14N60P 78L15 DSEI12-10A IXDD414 IXCP

    CTX12SL

    Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4


    Original     		PDF 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 CTX12SL CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200

    IX6R11P7

    Abstract: No abstract text available
    Text: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity


    Original     		PDF IX6R11 IX6R11 IX6R11S6 IX6R11S3 IX6R11P7

    h bridge ups circuit schematic diagram

    Abstract: IXDP630 application note 3 phase ups schematic diagram resistors 1k ohm IXDP630 IXDP631 schematic diagram UPS ix6r11s3 SCHEMATIC POWER SUPPLY WITH IGBTS Panasonic ic "18-pin"
    Text: EV6R11 IX6R11 HALF BRIDGE DRIVER Evaluation Board Introduction Features • Single chip for driving high/low side MOSFETs / IGBTs • High to low side isolation of 600V • Common-mode dv/dt immunity of greater than 50V/nanosecond • Undervoltage lockout


    Original     		PDF EV6R11 IX6R11 IXDP630 IXDP631 IXDD414 IXFK90N20Q 0A/200V h bridge ups circuit schematic diagram IXDP630 application note 3 phase ups schematic diagram resistors 1k ohm schematic diagram UPS ix6r11s3 SCHEMATIC POWER SUPPLY WITH IGBTS Panasonic ic "18-pin"

    CTX12S

    Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40


    Original     		PDF SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 16CTQ100S CTX12S CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S

    CTX12S

    Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
    Text: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT


    Original     		PDF SGRECT/0802 CTX12S CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent

    Untitled

    Abstract: No abstract text available
    Text: IX4R11 Preliminary Data Sheet 4A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX4R11 IX4R11 HCPL-314J DSEI12-10A IXDD414 IXFP4N100Q -600V IX4R11S3 IX4R11P7

    Untitled

    Abstract: No abstract text available
    Text: IX4R11 Preliminary Data Sheet 4A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX4R11 IX4R11 HCPL-314J DSEI12-10A IXDD414 IXFP4N100Q -600V IX4R11S3 IX4R11P7

    VCH20

    Abstract: IX6R11P7 ixdd414 IXFK21N100F 18PIN 18-PIN IX6R11 IX6R11S3 IX6R11S6 ixys mosfet
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 IXFH14N100Q IXTU01N100 IX6R11S3 IX6R11S6 IX6R11S3 IX6R11S6 VCH20 IX6R11P7 ixdd414 IXFK21N100F 18PIN 18-PIN ixys mosfet

    Untitled

    Abstract: No abstract text available
    Text: EV6R11 IX6R11 HALF BRIDGE DRIVER Evaluation Board Introduction Features • Single chip for driving high/low side MOSFETs / IGBTs • High to low side isolation of 600V • Common-mode dv/dt immunity of greater than 50V/nanosecond • Undervoltage lockout


    Original     		PDF EV6R11 IX6R11 IXDP630 IXDP631 IXDD414 IXFK90N20Q 0A/200V

    Untitled

    Abstract: No abstract text available
    Text: □IX Y S Fast Recovery Epitaxial Diode FRED DSEI120 IFAVM RRM rr 130 A 600 V 35 ns Preliminary data v V RRM RSM V c * 600 DSE1120-06A Symbol Test Conditions N rms T ,j ★ Maximum Ratings — * l"v jM 250 130 tbd A A A ^FRM Tc = 8Q°C; rectangular, d = 0.5


    OCR Scan     		PDF DSEI120 O-247 DSE1120-06A 5582A

    dse112

    Abstract: 4565d IXYS DSEI 2 dse1 DSEI12-04A DSEI12-05A DSEI12 IXYS DSEI 12-06A TVR diode
    Text: 4bflb52t. 0D01b2fl 43T * I X Y □IXYS DSEI12 Fast Recovery Epitaxial Diode V 440 540 640 400 500 600 DSEI12-04A DSE11 2-05A DSE112-06A A .M / o Maximum ratings Symbol Test conditions 1 TVJ = T vjm Tc = 100°C; rectangular. 5 = 0.5 tp < 10 us; rep. rating, pulse width limited by Tv»


    OCR Scan     		PDF 00Qlb2fl DSEI12 2-04A 2-05A 2-06A O-220 dse112 4565d IXYS DSEI 2 dse1 DSEI12-04A DSEI12-05A IXYS DSEI 12-06A TVR diode

    Untitled

    Abstract: No abstract text available
    Text: nixYS Fast Recovery Epitaxial Diode FRED DSEI12 IFAVM vrRRM 35 ns t ^HSM V v RRM f A Type C l \ 14 A 600 V TO-220 AC V 640 600 DSEI12-06A Symbol Test Conditions Urms Uavm * ^FHM T VJ Jpdt Maximum Ratings “ 1"vjM Tc = 100°C; rectangular, d = 0.5 tp < 10 (xs; rep. rating, pulse width limited by TVJM


    OCR Scan     		PDF DSEI12 O-220 DSEI12-06A 1997IXYS

    Untitled

    Abstract: No abstract text available
    Text: n ixY S Fast Recovery Epitaxial Diode FRED v RSM V* RRM V DSEI12 IFAVM f\ A Type V RRM 12 A 1000 V t 50 ns TO-220 AC 1 \ C V DSEi 12-10 A 1000 1 0 00 Symbol Test Conditions Maximum Ratings ^FRM T1 VJ = T1 VJM Tc = 100°C; rectangular, d = 0.5 tp < 10 ns; rep. rating, pulse width limited by TVJM


    OCR Scan     		PDF DSEI12 O-220 4bflb25b

    DSEI12

    Abstract: No abstract text available
    Text: MbflbESb DDQlbBO CHÛ « I X Y □IXYS DSEI12 Fast Recovery Epitaxial Diode V RSM IFAV V = 12 A = 800-1000 V < 50 ns Type V 800 Symbol lm ] ' favh U M DSEi 12-08 A DSEI 12-10A B00 1000 1000 1 u if*dt Maximum ratings Test conditions V = 45 °C ; t = 10 m s 50 H z!, sine


    OCR Scan     		PDF DSEI12 2-08A O-220

    SOT227B

    Abstract: DSEI2X121-02A DSEI12-06A DSEI2X61-12b DSEI2*61-12 DSEI2X31-12B DSEI2*61 ixys dsei2x31-06c DSEP2X61-12A DSEP12-12A
    Text: klH TEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten\ 495 739-09-95, 644-41-29 electronics flMOAbi FRED (Fast Recovery Epitaxial Diodes) $upMbi IXYS np0M3B0flMTenb f lM a n a 3 0 H p a ö o H M X T e M n e p a T y p Kofl: : IXYS : o t - 40oC f l o + 150oC V f npw [B]


    OCR Scan     		PDF flnana30H ot-40Â DSEI12-06A T0220AC DSEP12-12A DSEP30-03A T0247AD DSEI60-06A SOT227B DSEI2X121-02A DSEI2X61-12b DSEI2*61-12 DSEI2X31-12B DSEI2*61 ixys dsei2x31-06c DSEP2X61-12A

    DSE112-12A

    Abstract: DSE112-10A dse112 DSEI2X101-12A DSE1120-12A 2X31-12B DSDI60-18A DSE112-12 DSEI 120-06A DSDI60-16A
    Text: Fast Recovery Epitaxial Diodes FRED lFAV= 8 - 582 A V RRM Type 1FAV @ T c TvJM= 150°C ^FRMS ^V JM ^FSM vF 10 ms 45°C A max. "^VJM @ lF lRM @ -di/dt K typ. typ. TVJ=25°C TVJ = 100°C ns A A/(is = 150°C ► New □SEI 8-06A V A °C A 600 8 115 16 100 1.3


    OCR Scan     		PDF DSEI8-06AS DSEI12-06A DSE112-10A DSE112-12A 19-06AS 0-12A 0-06A 30-1OA 35-06AS dse112 DSEI2X101-12A DSE1120-12A 2X31-12B DSDI60-18A DSE112-12 DSEI 120-06A DSDI60-16A

    Untitled

    Abstract: No abstract text available
    Text: gixY S Fast Recovery Epitaxial Diode FRED DSEM2 lFAVM = 14 A VRRM = 600 V trr = 35 ns TO-220 AC c c A = Anode, C = Cathode Symbol Test Conditions Urms W« TVj ~ ~^vjm ^FRM ^FSM Pt Maximum Ratings 25 14 150 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine


    OCR Scan     		PDF O-220 T0-220