KYS 30 40 diode
Abstract: 40n60 transistor mos 30N60 2355Z wiom DC IXYS 30N60 of ic 3915 1XYS 30N60T 35N100
Text: MbE 4bôb22b D I X Y S OGQQÔTM T H IX Y CORP □IXYS Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features Guaranteed Short Circuit Capability SCSOA Low Input Capacitances Optimized for 60Hz to 30kHz Switching
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30kHz
1560A
4bflb55b
Q000S1S
IXSH20N60
IXSM20N60
KYS 30 40 diode
40n60 transistor
mos 30N60
2355Z
wiom DC
IXYS 30N60
of ic 3915
1XYS
30N60T
35N100
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f g megamos
Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
Text: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested
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ofMIL-S-19500
MIL-M-38510.
f g megamos
megamos
megamos 48
TO220H
ID 48 Megamos
megamos 13
IXGE
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f g megamos
Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
Text: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested
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fit55t
Q000563
f g megamos
megamos 13
megamos
IXGE75N100Z
ID 48 Megamos
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GEM X 365
Abstract: IXGH24N60B 24N60 IXGH24N50B zr smd
Text: Prelim inary data HiPerFAST IGBT IXGH24N50B IXGH24N60B V CES ^C 25 VCE(sat) 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns TO-247 SMD (24N*BS) Znr Symbol Test Conditions Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C 500 600 V Vcon Tj = 25°C to 150°C; RGE = 1 MQ
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IXGH24N50B
IXGH24N60B
O-247
24N50
24N60
GEM X 365
24N60
zr smd
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Untitled
Abstract: No abstract text available
Text: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v*» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms *FAV* 1 Ifmi
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OT-227
2x61-06B
2x61-08B
2x61-10B
D-68619
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E72873
Abstract: MDD56-04N1 MDD56-06N1 MDD56-08N1 MDD56-12N1 MDD56-14N1 MDD56-16N1
Text: 4bE » • MbfibSSb 0 0 0 1 2 2 2 T « I X Y I X Y S CORP n i x Y S MDD56 Diode Modules iTAV= 2 x 71 A VRRM= 400-1600 V Vrsm V„rm Type V V Version 1 500 700 900 1300 1500 1700 400 600 800 1200 1400 1600 MDD56-04N1 MDD56-06N1 MDD56-08N1 MDD56-12N1 MDD56-14N1
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GGQ122S
MDD56
MDD56-04N1
MDD56-06N1
MDD56-08N1
MDD56-12N1
MDD56-14N1
MDD56-16N1
E72873
MDD56-04N1
MDD56-06N1
MDD56-08N1
MDD56-12N1
MDD56-14N1
MDD56-16N1
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j45ac
Abstract: No abstract text available
Text: □IXYS Power MOSFET Stage for Boost Converters VUM 24-05 VDSS D25 R DS on Module for Power Factor Correction 1 3 Symbol 2 7 8 = 500 V = 35 A = 0 .1 2 Q 4 6 Maximum Ratings Test Conditions 500 500 ±20 V V V Ts = 85°C Ts = 25°C : 25°C, t = <D 24 35 95
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4bflb25b
OG31bD
j45ac
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bt 2025
Abstract: VM7512
Text: □IXYS IGBT Modules Half-Bridge and Chopper Configurations High Short Circuit SOA Capability VII VII 75-12S3 VID75-12S3 VDI75-12S3 VID IC DC = 75 A VCES = 1200 V VCE(sat) = 3.4 V VDI r -•’ 3 I * -o I 8 o— M 90 Symbol Test Conditions I I O
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75-12S3
VID75-12S3
VDI75-12S3
VID75
VDI75
fib22b
VII75-12S3
bt 2025
VM7512
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Diode LT 023
Abstract: No abstract text available
Text: Thyristor Modules Thyristor/Diode Modules MCC 95 iTRMS = 2 x 180 A MCD 95 iTAVM =2x116A V = 800-1800 V RRM T 0 -2 4 0 AA v RSM V V DSM V DRM V V Version 1 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC T y P e rrm 95-08io1 95-12io1 95-14io1
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2x116A
95-08io1
95-12io1
95-14io1
95-16io1
95-18io1
95-08io8
95-12io8
95-16io8
95-18io8
Diode LT 023
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Untitled
Abstract: No abstract text available
Text: n ixY S Fast Recovery Epitaxial Diode FRED v RSM V* RRM V DSEI12 IFAVM f\ A Type V RRM 12 A 1000 V t 50 ns TO-220 AC 1 \ C V DSEi 12-10 A 1000 1 0 00 Symbol Test Conditions Maximum Ratings ^FRM T1 VJ = T1 VJM Tc = 100°C; rectangular, d = 0.5 tp < 10 ns; rep. rating, pulse width limited by TVJM
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DSEI12
O-220
4bflb25b
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tt 2146 m
Abstract: tt 2146 IXGH9090
Text: EilXYS IXGH9090 HiPerFAST IGBT with Diode ^C 25 V CES V CE sat Lfi 48 A 600 V 2.7 V 400 ns T O -2 4 7 A D M a x im u m R a tin g s S ym bol T e s t C o n d itio n s VcHS T j = 2 5 'C to 1 5 0 X 600 V ^C G R T ,J = 2 5 'C to 1 5 0 X ; R b t = 1 M a 600
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IXGH9090
4bflb25b
tt 2146 m
tt 2146
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