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ABB Low Voltage Products and Systems 2CDS200922R0001 S2C-S/H6R Compact Signal/Auxilliary Rohs Compliant: Yes \|Abb 2CDS200922R0001
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	2CDS200922R0001	Bulk	1		1	1 $59.3 10 $52.85 100 $45.02 1000 $34.78 10000 $34.78	Buy Now
TME	2CDS200922R0001				1	1 $21.82 10 $19.12 100 $19.12 1000 $19.12 10000 $19.12	Get Quote
ABB Low Voltage Products and Systems 2CDS200936R0002 S2C-H2Ol Compact Left Aux 2No Rohs Compliant: Yes \|Abb 2CDS200936R0002
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	2CDS200936R0002	Bulk			1	1 $50.93 10 $45.4 100 $38.67 1000 $29.88 10000 $29.88	Buy Now
TME	2CDS200936R0002		30		1	1 $13.89 10 $12.17 100 $12.17 1000 $12.17 10000 $12.17	Buy Now
ABB Low Voltage Products and Systems 2CDS200936R0001 S2C-H11L Compact Left Aux 1No 1Nc Rohs Compliant: Yes \|Abb 2CDS200936R0001
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	2CDS200936R0001	Bulk			1	1 $50.93 10 $45.4 100 $38.67 1000 $29.88 10000 $29.88	Buy Now
ABB Low Voltage Products and Systems 2CDS200908R0002 Shunt Trip Mechanism, Type A2, 110-415VAC/250VDC, for Field Mounting, Right Side
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	2CDS200908R0002	Bulk	4	5 Weeks	1	1 $69.28 10 $65.82 100 $55.43 1000 $55.43 10000 $55.43	Buy Now
TME	2CDS200908R0002				1	1 $43.58 10 $38.19 100 $38.19 1000 $38.19 10000 $38.19	Get Quote
Dallas Semiconductor DS2009R-80
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	DS2009R-80		343		1	1 $12 10 $9 100 $7.2 1000 $6.9 10000 $6.9	Buy Now
Quest Components ()	DS2009R-80		274			1 $16 10 $16 100 $16 1000 $9.2 10000 $9.2	Buy Now
	DS2009R-80		79			1 $21.6 10 $21.6 100 $16.8 1000 $16.8 10000 $16.8	Buy Now

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DS2009 Datasheets (63)

Part	Manufacturer	Description	Datasheet Type	PDF
DS2009	Dallas Semiconductor	512 x 9 FIFO Chip	Scan	PDF
DS2009-120	Dallas Semiconductor	512 x 9 FIFO Chip	Scan	PDF
DS2009-120	Dallas Semiconductor	512 x 9 FIFO Chip	Scan	PDF
DS2009-120N	Dallas Semiconductor	512 x 9 FIFO Chip	Scan	PDF
DS2009-35	Dallas Semiconductor	512 x 9 FIFO Chip	Scan	PDF
DS2009-35	Dallas Semiconductor	512 x 9 FIFO Chip	Scan	PDF
DS2009-35N	Dallas Semiconductor	512 x 9 FIFO Chip	Scan	PDF
DS2009-50	Dallas Semiconductor	512 x 9 FIFO Chip	Scan	PDF
DS2009-50	Dallas Semiconductor	512 x 9 FIFO Chip	Scan	PDF
DS2009-50N	Dallas Semiconductor	512 x 9 FIFO Chip	Scan	PDF
DS2009-65	Dallas Semiconductor	512 x 9 FIFO Chip	Scan	PDF
DS2009-65	Dallas Semiconductor	512 x 9 FIFO Chip	Scan	PDF
DS2009-65N	Dallas Semiconductor	512 x 9 FIFO Chip	Scan	PDF
DS2009-80	Dallas Semiconductor	512 x 9 FIFO Chip	Scan	PDF

DS2009-80	Dallas Semiconductor	512 x 9 FIFO Chip	Scan	PDF
DS2009-80N	Dallas Semiconductor	512 x 9 FIFO Chip	Scan	PDF
DS2009D-120	Dallas Semiconductor	SRAM FIFO	Original	PDF
DS2009D-35	Dallas Semiconductor	SRAM FIFO	Original	PDF
DS2009D-50	Dallas Semiconductor	SRAM FIFO	Original	PDF
DS2009D-65	Dallas Semiconductor	SRAM FIFO	Original	PDF

DS2009 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
DS2009SF Abstract: DS2009SF43 DS2009SF44 DS2009SF45 DS2009SF46 DS2009SF47 DS2009SF48 DS4190-4 Contextual Info: DS2009SF DS2009SF Rectifier Diode Replaces September 2001 version, DS4190-4.0 DS4190-4.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4800V ■ High Surge Capability IF AV 1428A IFSM APPLICATIONS 20500A ■ Rectification ■ Freewheel Diode	Original	DS2009SF DS4190-4 0500A DS2009SF48 DS2009SF47 DS2009SF46 DS2009SF45 DS2009SF44 DS2009SF DS2009SF43 DS2009SF44 DS2009SF45 DS2009SF46 DS2009SF47 DS2009SF48	PDF
DS4190-4 Abstract: AN4839 DS2009SF DS2009SF43 DS2009SF44 DS2009SF45 DS2009SF46 DS2009SF47 DS2009SF48 3400A Contextual Info: DS2009SF DS2009SF Rectifier Diode Replaces September 2001 version, DS4190-4.0 DS4190-4.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4800V ■ High Surge Capability IF AV 1428A IFSM APPLICATIONS 20500A ■ Rectification ■ Freewheel Diode	Original	DS2009SF DS4190-4 0500A DS2009SF48 DS2009SF47 DS2009SF46 DS2009SF45 DS2009SF44 AN4839 DS2009SF DS2009SF43 DS2009SF44 DS2009SF45 DS2009SF46 DS2009SF47 DS2009SF48 3400A	PDF
DS2009SF Abstract: DS2009SF43 DS2009SF44 DS2009SF45 DS2009SF46 DS2009SF47 DS2009SF48 DS4190-4 DS4190 Contextual Info: DS2009SF DS2009SF Rectifier Diode Replaces September 2001 version, DS4190-4.0 DS4190-4.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4800V ■ High Surge Capability IF AV 1428A IFSM APPLICATIONS 20500A ■ Rectification ■ Freewheel Diode	Original	DS2009SF DS4190-4 0500A DS2009SF48 DS2009SF47 DS2009SF46 DS2009SF45 DS2009SF44 DS2009SF DS2009SF43 DS2009SF44 DS2009SF45 DS2009SF46 DS2009SF47 DS2009SF48 DS4190	PDF
IMS1630 Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501 Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68	OCR Scan	AM2147 AM2148/9 AM2167 AM2168 AM9126 AM99C68 AM99C88 AM99C89 AM67C4501 AM67C4502 IMS1630 HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501	PDF
rc4565 Abstract: A1536 DS2009 DS2009-35 DS2009-50 DS2009-65 DS2009-80 DS2013 141S1 Contextual Info: V y * DALLAS SEMICONDUCTOR 512 DS2009 9 FIFO Chip PIN ASSIGNMENT FEATURES • First-in, first-out memory-based architecture W £ 1# D8ÍZ 2 D3C 3 D2C 4 D1C 5 DOH 6 XI c 7 FF C 8 • Flexible 512 x 9 organization • Low-power HCMOS technology • Asynchronous and simultaneous read/write	OCR Scan	DS2009 512x9 DS2010, DS2011, DS2012, DS2013 120ns DS2010 rc4565 A1536 DS2009-35 DS2009-50 DS2009-65 DS2009-80 141S1	PDF
DS2011 Abstract: DS2009 DS2009-120 DS2009-35 DS2009-50 DS2009-65 DS2009-80 DS2010 Contextual Info: DALLAS SEMICONDUCTOR DS2009 5 1 2 x 9 F IF O C h ip PIN ASSIGNMENT FEATURES • First-in, first-out memory-based architecture W C 1# D 8d 2 D3C 3 D2Ü 4 • Flexible 5 1 2 x9 organization • Low-power HCMOS technology D id DOC XI 0 FF C • Asynchronous and simultaneous read/write	OCR Scan	DS2009 512x9 2bl413D DS2010, DS2011, DS2012, DS2013 120ns DS2011 DS2009 DS2009-120 DS2009-35 DS2009-50 DS2009-65 DS2009-80 DS2010	PDF
Contextual Info: DS2009SN43 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.28k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage4.3k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.16k¥ V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)3.4k @Temp. (øC) (Test Condition)25#	Original	DS2009SN43 Current75m StyleDisc-73	PDF
Contextual Info: DS2009SF DS2009SF Rectifier Diode Replaces September 2001 version, DS4190-4.0 DS4190-4.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4800V ■ High Surge Capability IF AV 1428A IFSM APPLICATIONS 20500A ■ Rectification ■ Freewheel Diode	Original	DS2009SF DS4190-4 0500A DS2009SF48 DS2009SF47 DS2009SF46 DS2009SF45 DS2009SF44	PDF
DS2011 Abstract: DS2009 DS2009-120 DS2009-35 DS2009-50 DS2009-65 DS2009-80 DS2010 S2009 Contextual Info: DS2009 DS2009 5 1 2 x 9 FIFO Chip DALLAS SEMICONDUCTOR PIN ASSIGNMENT FEATURES • First-in, first-out memory-based architecture • Flexible 512 x 9 organization • Low-power HCMOS technology W C 1« D8d 2 28 □ VCC 27 D D4 D 3C 3 D2Ü 4 26 □ 25 □ 24 □	OCR Scan	DS2009 512x9 DS2010, DS2011, DS2012, DS2013 120ns DS2010 DS2011 DS2009 DS2009-120 DS2009-35 DS2009-50 DS2009-65 DS2009-80 S2009	PDF
Contextual Info: AUGUST 1995 DS2009SF DS4190-2.2 DS2009SF RECTIFIER DIODE APPLICATIONS KEY PARAMETERS 4800V VRRM 1105A IF AV 20500A IFSM • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.	Original	DS2009SF DS4190-2 0500A DS2009SF48 DS2009SF47 DS2009SF46 DS2009SF45 DS2009SF44 DS2009SF43	PDF
DS2009 Abstract: DS2011 DS2013 100 watt hf transistor 12 volt DS2010 DS2009-50 DS2009-65 DS2009-80 DS2012 DS2009-120 Contextual Info: DS2009 DS2009 512 x 9 FIFO Chip • Flexible 512 x 9 organization • Low-power HCMOS technology • Asynchronous and simultaneous read/write • Bidirectional applications PIN ASSIGNMENT W 1 28 D8 D3 2 3 27 VCC D4 26 D5 D2 4 D1 D0 XI FF 5 6 7 25 24 23 D6	Original	DS2009 28-Pin 30tput DS2010, DS2011, DS2012, DS2013 120ns DS2009 DS2011 100 watt hf transistor 12 volt DS2010 DS2009-50 DS2009-65 DS2009-80 DS2012 DS2009-120	PDF
Contextual Info: @ MITEL DS2009SF Rectifier Diode S E M IC O N D U C T O R Supersedes August 1995 version, DS4190 - 2.2 DS4190 - 2.3 KEY PARAMETERS VRRM 4800V IF av, 1105A 'fs m 20500A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.	OCR Scan	DS4190 DS2009SF 0500A DS2009SF48 DS2009SF47 DS2009SF46 DS2009SF45 DS2009SF44 DS2009SF43	PDF
RPI-1035 Contextual Info: DS2009 DALLAS SEMICONDUCTOR DS2009 5 1 2 x 9 F IF O Chip FEATURES PIN ASSIGNMENT • First-in, first-out memory-based architecture W C 1» 26 □ V C C • Flexible 512 x 9 organization D8C 2 D 3C 3 27 3 0 4 26 □ D5 • Low-power HCMOS technology D2C 4 D1C 5	OCR Scan	DS2009 120ns DS2010, DS2011, DS2012, DS2013 RPI-1035	PDF
Contextual Info: DS2009 DALLAS SEMICONDUCTOR DS2009 5 1 2 x 9 FIFO Chip FEATURES PIN DESCRIPTION do •First-in, first-out memory-based architecture •Flexible 512 x 9 organization •Low-power HCMOS technology • Asynchronous and simultaneous read/write • Bidirectional applications	OCR Scan	DS2009 DS2010, DS2011, DS2012, DS2013 120ns DS2009-N 100mA	PDF

DIN 1445 Abstract: DS1201 Contextual Info: M ECH AN ICA L D R A W IN G S 8 - TO 28-PIN DIP 300 MIL Includes: DS1200 DS1259 DS2009D DS2010D DS2011D DS2013D PKG 8-PIN 10-PIN 14-PIN 16-PIN DIM MIN MAX MIN MAX MIN MAX MIN MAX AIN. MM 0.360 9.14 0.400 10.16 0.480 12.19 0.520 13.21 0.740 18.80 0.780 19.81	OCR Scan	28-PIN DS1200 DS1259 DS2009D DS2010D DS2011D DS2013D 10-PIN 14-PIN 16-PIN DIN 1445 DS1201	PDF
Contextual Info: DS2009SN42 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.28k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage4.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.16k¥ V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)3.4k @Temp. (øC) (Test Condition)25#	Original	DS2009SN42 Current75m StyleDisc-73	PDF
dallas DS2009 Abstract: cbc 327 t4635 DS200B DS2000-35 512X9 DS200D ds2000 DS2011 DS200 Contextual Info: DS2009 DALLAS S EM IC ON DU CTO R CORP SGE D 2bl413G DDDHbOl 2 DALLAS SEMICONDUCTOR DAL - 3 5 ~ DS2009 5 1 2 x 9 F IFO Chip FEATURES 3 PIN ASSIGNMENT • First-in, first-out memory-based architecture W C 1# 2$ □ VCC sseS gsi DSC 2 27 304 f"A T 'T T3S3fâ6'	OCR Scan	DS200Â 2bl4130 DS2009 512x9 120ns T-46-35 DS2010, DS2011, dallas DS2009 cbc 327 t4635 DS200B DS2000-35 DS200D ds2000 DS2011 DS200	PDF
DS4190 Contextual Info: MITEL DS2009SF Rectifier Diode S E M IC O N D U C T O R Supersedes August 1995 version, DS4190 - 2.2 DS4190 - 2.3 KEY PARAMETERS VRRM 4800V IF av, 1105A 'fs m 20500A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.	OCR Scan	DS4190 DS2009SF 0500A DS2009SF48 DS2009SF47 DS2009SF46 DS2009SF45 DS2009SF44 DS2009SF43	PDF
Contextual Info: S i GEC PLESSEY a u g u st SEMI CO NDUC TOR S 19 9 5 DS4190-2.2 DS2009SF RECTIFIER DIODE KEY PARAMETERS V,RRM 4800V 1105A J AV 20500A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.	OCR Scan	DS4190-2 DS2009SF 0500A DS2009SF48 DS2009SF47 DS2009SF46 DS2009SF45 DS2009SF44 DS2009SF43 2009SF	PDF
ps2009 Abstract: A1536 DS160B DS2009 DS2009-120 DS2009-35 DS2009-50 DS2009-80 Contextual Info: DS2009 DALLAS SEMICONDUCTOR FEATURES DS2009 512 x 9 FIFO Chip * PIN ASSIGNMENT • First-in, first-out memory-based architecture W E 1# DSC 2 D3C 3 • Flexible 512 x 9 organization D2C 4 D iC 5 • Low-power HCMOS technology • Asynchronous and simultaneous read/write	OCR Scan	DS2009 512x9 Current-35ns, 120ns ps2009 A1536 DS160B DS2009-120 DS2009-35 DS2009-50 DS2009-80	PDF
Contextual Info: DALLAS SEMICONDUCTOR DS2009 5 1 2 x 9 FIFO Chip PIN ASSIGNM ENT FEATURES • First-in, first-out memory-based architecture • Flexible 512 x 9 organization • Low-power HCMOS technology • Asynchronous and simultaneous read/write • Bidirectional applications	OCR Scan	DS2009 DS2010, DS2011, DS2012, DS2013 120ns DS2010	PDF
Contextual Info: DS2009SN35 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.28k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage3.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.16k¥ V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)3.4k @Temp. (øC) (Test Condition)25#	Original	DS2009SN35 Current75m StyleDisc-73	PDF
Contextual Info: DS2009SN39 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.28k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage3.9k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.16k¥ V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)3.4k @Temp. (øC) (Test Condition)25#	Original	DS2009SN39 Current75m StyleDisc-73	PDF
DS2009 Abstract: DS2013 Contextual Info: DS2013 DALLAS SEMICONDUCTOR DS2013 8 1 9 2 x 9 FIFO Chip FEATURES PIN ASSIGNMENT • First-in, first-out memory-based architecture w c 1* D8C 2 D3C 3 • Flexible 8192 x 9 organization • Low-power HCMOS technology D2C 4 D1C 5 DOC 6 • Asychronous and simultaneous read/write	OCR Scan	DS2013 8192x9 DS2013 DS2009 512x9	PDF

DS2009 Search Results

DS2009 Price and Stock

ABB Low Voltage Products and Systems 2CDS200922R0001

ABB Low Voltage Products and Systems 2CDS200936R0002

ABB Low Voltage Products and Systems 2CDS200936R0001

ABB Low Voltage Products and Systems 2CDS200908R0002

Dallas Semiconductor DS2009R-80

DS2009 Datasheets (63)

DS2009 Datasheets Context Search

DS2009SF

DS4190-4

DS2009SF

IMS1630

rc4565

DS2011

DS2011

DS2009

RPI-1035

DIN 1445

dallas DS2009

DS4190

ps2009

DS2009