Untitled
Abstract: No abstract text available
Text: ADV MICRO MEMORY MAE D Q257S2Û 0D304Ô4 b IA M D 4 T -4 6 -1 3 -2 9 Advanced Micro Devices Am27C2048 2 Megabit (131,072 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Fast access time -v 100 ns Low power consumption - 25 mA typical CMOS standby current
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OCR Scan
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PDF
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Q257S2Ã
0D304Ã
Am27C2048
16-Bit)
-40-pin
44-pin
D257S2Ã
D03DMn
05-006B
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Untitled
Abstract: No abstract text available
Text: F IN A L a A m 28F 512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns m aximum access time ■ ■ CMOS Low pow er consum ption Flasherase Electrical Bulk Chip-Erase
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32-Pin
Am28F512
28F5l
Am28F512-75
02S752A
QD32bbS
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D2575
Abstract: AM27C256 AM27C256-55 AM27C256-70
Text: AD V MICRO MEMORY t4E » • D257S2Ô G03n33 7SO CI Advanced Micro Devices Am27C256 256 Kilobit (32,768 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ Fast access time Latch-up protected to 100 m A from -1 V to Vcc + 1 V — 55 ns ■ Low power consumption
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D257S2Ã
Am27C256
28-pin
32-pin
Am27MORY
KS000010
08007G-10
D2575
AM27C256-55
AM27C256-70
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programming AM29F400
Abstract: TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB
Text: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ ■ — Minimizes system level power requirements
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Am29F400T/Am29F400B
8-Bit/262
16-Bit)
44-pin
48-pin
D257S2Ã
003S5bb
programming AM29F400
TSOP 48 Package am29f400
AM29F400T
AM29F400
Am29f400 equivalent
AM29 FLASH
OES752
29f400b
AM29F400TB
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Untitled
Abstract: No abstract text available
Text: F IN A L Am29F100T/Am29F100B AdvaM n££ 1 Megabit 131,072 x 8-Bit/65,536 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ — M inimizes system level power requirements
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OCR Scan
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Am29F100T/Am29F100B
8-Bit/65
16-Bit)
48-pin
29F100T/Am29F100B
29F100
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0257S2
Abstract: No abstract text available
Text: ADV MI CRO BÖE MEMORY D . * QSS7SSÖ 002=14^ W PS ÏS -2 ? I AMD4 3 £? Advanced Micro Devices Am27C512L 65,536 x 8-Bit Ultra-Low CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tim e—70ns ■ Ultra-low power consum ption: - 5 mA maximum active current at 5 MHz
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OCR Scan
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Am27C512L
27C5l2
512K-blt,
AITI27C512L
T-46-13-29
0257S2
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