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    02S752A Search Results

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    Untitled

    Abstract: No abstract text available
    Text: a Am27X512 512 Kilobit 65,536 x 8-Bit CMOS ExpressROM Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ High noise immunity ■ Low power dissipation — Factory optimized programming — Fully tested and guaranteed


    OCR Scan     		PDF Am27X512 Am33C93A

    Untitled

    Abstract: No abstract text available
    Text: F IN A L a A m 28F 512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns m aximum access time ■ ■ CMOS Low pow er consum ption Flasherase Electrical Bulk Chip-Erase


    OCR Scan     		PDF 32-Pin Am28F512 28F5l Am28F512-75 02S752A QD32bbS

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am29F400AT/Am29F400AB 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements


    OCR Scan     		PDF Am29F400AT/Am29F400AB 8-Bit/262 16-Bit) 44-pin 48-pin 0E5752Ã Am29F400T/Am29F400B 18612B.

    28F020

    Abstract: AM28F020
    Text: a Am28F020 Advanced Micro Devices 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High perform ance — 90 ns m aximum access time ■ ■ CMOS Low pow er consum ption — 100 nA m aximum standby current


    OCR Scan     		PDF Am28F020 32-Pin -32-pin 28F020

    Untitled

    Abstract: No abstract text available
    Text: ADV MI CRO MEMORY 4ÛE D n 05S7S5Ô QQaGSbS t> • AMD4 T—4 6 —1 3 -2 5 Am27X128 Advanced Micro Devices 16,384 X 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ■ As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed


    OCR Scan     		PDF 05S7S5Ã Am27X128 KS000010 0205-005A

    programming AM29F400

    Abstract: TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB
    Text: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ ■ — Minimizes system level power requirements


    OCR Scan     		PDF Am29F400T/Am29F400B 8-Bit/262 16-Bit) 44-pin 48-pin D257S2Ã 003S5bb programming AM29F400 TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB

    Untitled

    Abstract: No abstract text available
    Text: Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Blt CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS low power consumption ■ — 30 mA maximum active current — 100 nA maximum standby current


    OCR Scan     		PDF Am28F256A 32-Pin 033A1b

    Am2BF010A

    Abstract: to525 Transistor 2SC 2166
    Text: Zi A m 2 8 F 0 1 0 A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 90 ns m aximum access time ■ CMOS low power consum ption ■


    OCR Scan     		PDF Am28F010A 32-Pin 0D327b5 Am2BF010A to525 Transistor 2SC 2166

    3251b

    Abstract: Am29F040 29F040 3251L AM29F040-75JC AM29F040A
    Text: P R E L IM IN A R Y Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — Minimizes system level power requirements ■ Com patible w ith JEDEC-standard com mands


    OCR Scan     		PDF Am29F040 32-pin 3251b 29F040 3251L AM29F040-75JC AM29F040A

    Untitled

    Abstract: No abstract text available
    Text: F IN A L Am29F100T/Am29F100B AdvaM n££ 1 Megabit 131,072 x 8-Bit/65,536 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ — M inimizes system level power requirements


    OCR Scan     		PDF Am29F100T/Am29F100B 8-Bit/65 16-Bit) 48-pin 29F100T/Am29F100B 29F100

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO {MEMORY} Tb D E | 02S7S2Û DDEbSST Am93L469 5 1 2 x9 TTL Low-Power Tag Buffer Am93L469 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 45-ns address to comparator output MATCH Replaces six or more integrated circuits with a single device


    OCR Scan     		PDF 02S7S2Ã Am93L469 45-ns Am93469 02S752A

    Untitled

    Abstract: No abstract text available
    Text: P R E L IM IN A R Y Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High perform ance ■ CM OS low pow er consum ption — 30 m A maximum active current


    OCR Scan     		PDF Am28F256A 32-pin 28F256A 0D32b3M

    Untitled

    Abstract: No abstract text available
    Text: a Advanced Micro Devices Am27X256 256 Kilobit 32,768 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime


    OCR Scan     		PDF Am27X256 Am33C93A

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AM D£t Am29LV800T/Am29LV800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range 2.7 to 3.6 V for read and write operations — Minimizes system level power requirements


    OCR Scan     		PDF Am29LV800T/Am29LV800B 8-Bit/524 16-Bit) 44-pin 48-pin 16-038-S044-2 752ft 003355b

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY- a Advanced Micro Devices A m 29F 016 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program A lgorithm s — Automatically programs and verifies data at


    OCR Scan     		PDF 16-Megabit 48-pin Am29F016 G25752A 0033DSb TSR048 16-038-TS48 DA104

    Untitled

    Abstract: No abstract text available
    Text: PRELIM INARY a A m 2 9 F 1 0 0 T /A m 2 9 F 1 OOB 1 Megabit 131,072 x 8-Bit/65,536 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ±1 0 % write and erase, read — Minimizes system level power requirements


    OCR Scan     		PDF 8-Bit/65 16-Bit) 44-pin 48-pin CP-10 3M-8/94-0