AM29F016D-120
Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm
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Am29F016D
Am29F016
Am29F016B
AM29F016D-120
AM29F016D-150
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
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CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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gal programming algorithm
Abstract: PALCE29M16 PALCE29M16H PALCE29M16H-25 PD3024
Text: USE GAL DEVICES FOR NEW DESIGNS FINAL COM’L: H-25 Lattice Semiconductor PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE
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PALCE29M16H-25
24-Pin
gal programming algorithm
PALCE29M16
PALCE29M16H
PALCE29M16H-25
PD3024
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MACH445
Abstract: PAL22V10
Text: FINAL COM’L: -12/15/20 MACH445-12/15/20 Lattice Semiconductor High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 100-pin version of the MACH435 in PQFP ■ Up to 20 product terms per function, with XOR ■ 5 V, in-circuit programmable
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MACH445-12/15/20
100-pin
MACH435
PAL33V16"
MACH435
17468E-26
17468E-27
MACH445
PAL22V10
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MACH130-20
Abstract: MACH130 MACH230 PAL22V10 PAL26V16
Text: FINAL COM’L: -15/20 IND: -18/24 MACH130-15/20 Lattice Semiconductor High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS 84 Pins 64 Outputs 64 Macrocells 64 Flip-flops; 4 clock choices 15 ns tPD Commercial 18 ns tPD Industrial 4 “PAL26V16” Blocks
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MACH130-15/20
PAL26V16"
MACH131,
MACH230,
MACH231,
MACH435
MACH130
PAL22V10
14131H-26
MACH130-20
MACH230
PAL26V16
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20V8Q
Abstract: SL06 20V8H-15 20V8 GAL20V8 PAL20R8 PALCE20V8 PD3024 pal20v8
Text: COM'L: H-5/7/10/15/25, Q-10/15/25 IND: H-15/25, Q-20/25 PALCE20V8 Family EE CMOS 24-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS ◆ Pin and function compatible with all PAL 20V8 devices ◆ Electrically erasable CMOS technology provides reconfigurable logic and full testability
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H-5/7/10/15/25,
Q-10/15/25
H-15/25,
Q-20/25
PALCE20V8
24-Pin
PD3024)
28-Pin
20V8Q
SL06
20V8H-15
20V8
GAL20V8
PAL20R8
PD3024
pal20v8
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PAL26V12
Abstract: MACH120 MACH220 PAL22V10
Text: FINAL COM’L: -10/12/15/20 IND: -14/18/24 MACH220-10/12/15/20 Lattice Semiconductor High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS 68 Pins 48 Outputs 96 Macrocells 96 Flip-flops; 4 clock choices 10 ns tPD 8 “PAL26V12” blocks with buried macrocells
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MACH220-10/12/15/20
PAL26V12"
MACH120
MACH221
MACH220
PAL22V10
14130I-26
14130I-27
PAL26V12
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PM7202
Abstract: bel 188 transistor pnp ST7032 10BASE2 10BASE5 P996 AMD PROMS SA5-27
Text: Am79C961A PCnet -ISA II Jumperless, Full Duplex Single-Chip Ethernet Controller for ISA DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet controller for the Industry Standard Architecture ISA and Extended Industry Standard Architecture (EISA) buses
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Am79C961A
10BASE-T,
Am79C961
Am7990
PM7202
bel 188 transistor pnp
ST7032
10BASE2
10BASE5
P996
AMD PROMS
SA5-27
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV200
8-Bit/128
16-Bit)
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TIC126 equivalent
Abstract: BCR40 93C46 AM79C978A PC99 of finite state machine AM79C901A
Text: Am79C978A PCnet - Home Single-Chip 1/10 Mbps PCI Home Networking Controller DISTINCTIVE CHARACTERISTICS n Fully integrated 1 Mbps HomePNA Physical Layer PHY as defined by Home Phoneline Networking Alliance (HomePNA) specification 1.1 — Optimized for home networking applications
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Am79C978A
Index-10
TIC126 equivalent
BCR40
93C46
PC99
of finite state machine
AM79C901A
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PAL26V16
Abstract: teradyne lasar
Text: FINAL COM’L: -15/20 IND: -18/24 Z I Advanced Micro Devices M A C H 1 3 0 - 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins ■ 64 Outputs ■ 64 Macrocells ■ 64 Flip-flops; 4 clock choices ■ 15 ns tpD Commercial
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PAL26V16"
MACH131,
MACH230,
MACH231,
MACH435
MACH130
PAL22V10
MACH130-15/20
55755b
PAL26V16
teradyne lasar
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Untitled
Abstract: No abstract text available
Text: Am27S41/27PS41 Am27S41/27PS41 16,384-Bit 4,096x4 Bipolar PROM DISTINCTIVE CHARACTERISTICS • AC performance is factory tested utilizing programmed test words and columns • Voltage and temperature compensated providing ex tremely flat AC performance over military range
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Am27S41/27PS41
384-Bit
096x4)
Am27S41
096-words
MIL-STD-883,
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27C400
Abstract: No abstract text available
Text: Am27C400 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit ROM Compatible CMOS EPROM DISTINCTIVE CHARACTERISTICS Single +5 V power supply • Fast access time ±10% power supply tolerance standard on most speeds — 100 ns ■ Low power consumption
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Am27C400
8-Bit/262
16-Bit)
44-pin
42-pin
27C400
KS000010
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Untitled
Abstract: No abstract text available
Text: AMDB Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and write operations for
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Am29LV081
20-year
Am29LV081B-100
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IC cd4028 PIN DIAGRAM
Abstract: No abstract text available
Text: Am27S95 32,768 Bit 8 1 9 2 x 4 Bipolar Registered PROM with SSR Diagnostics Capability ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS On-chip diagnostic shift register for serial observability and controllability of the output register User-programmable Enable Pin for Asynchronous or
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Am27S95
28-pin,
400-mil
MIL-STD-883,
IC cd4028 PIN DIAGRAM
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ampal16r8l
Abstract: 16H8 AMPAL16R4L AMPAL16L8A/BSA AmPAL16L8L
Text: AmPAL16R8 Fam ily 20-Pin IMOX Programmable Array Logic PAL Elements Distinctive Characteristics • AMD's superior IMOX technology - Guarantees tpo = 15 ns Max. "B " Versions • High-Speed, Half-Power ("A L") and Quarter-Power ("Q ") versions • Platinum-silicide fuses and added test words ensure
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AmPAL16R8
20-Pin
KS000010
L16R8
ampal16r8l
16H8
AMPAL16R4L
AMPAL16L8A/BSA
AmPAL16L8L
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xxxxw
Abstract: No abstract text available
Text: P R E L IM IN A R Y Am27X800 Advanced Micro Devices 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS ExpressROM Device • ±10% power supply tolerance ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed
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Am27X800
8-Bit/524
16-Bit)
KS000010
7347A-9
xxxxw
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100140 ecl
Abstract: 2N1710
Text: ADV MICRO TELECOM 2 flE D DSS7S27 ODSTTÖl 1 7 ^ / ’S - 3 7 - ò £ ~ Preliminary Am7968/Am7969-175 a Advanced Micro Devices TAXIchip Integrated Circuits DISTINCTIVE CHARACTERISTICS • Parallel TTL bus interface 100-140 Mbps (12.5-17.5 Mbytes/sec) data
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DSS7S27
Am7968/Am7969-175
28-pln
Am7968/Arri7969-175
0E575E7
06751E
100140 ecl
2N1710
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20510D
Abstract: No abstract text available
Text: P R E L IM IN A R Y AMD3 Am29LV004 4 Megabit 512 K x 8-Blt CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV004
20510D
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Untitled
Abstract: No abstract text available
Text: AmPALC29M Al 6 24-Pin E2-Based CMOS Programmable Array Logic ADVANCE INFORMATION Distinctive Characteristics • • • • • High-performance semi-custom logic replacement; Electrically Erasable E2 technology allows repro grammability 16 bidirectional user-programmable I/O logic macro
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AmPALC29M
24-Pin
AmPALC29MA16
TC003951
KS000010
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Am27C020
Abstract: No abstract text available
Text: a Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 90 ns ■ Low power consumption — Typical programming time of 32 seconds ■ Latch-up protected to 100 mA from -1 V to
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Am27C020
28-pin
32-pln
KS000010
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Untitled
Abstract: No abstract text available
Text: Advanced Micro Devices A m 2 7 X 1 0 2 4 1 Megabit 55,536 x 16-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime
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16-Bit)
KS000010
12079D-9
Am27X1024
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eprom 27C512 28pin
Abstract: No abstract text available
Text: F IN A L A Am27C512 M D i l 512 Kilobit 64 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vc c + 1 V ■ Fast access time — Speed options as fast as 55 ns ■ High noise immunity ■ Low power consumption
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Am27C512
28-pin
32-pin
512-Kbit,
27C512
eprom 27C512 28pin
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028-28-Pin
Abstract: No abstract text available
Text: AMDH Am27X512 512 Kilobit 64 K x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime — Lower volume per code
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Am27X512
16-038-SB-AG
032--32-Pin
16-038FPO-5
028-28-Pin
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