Untitled
Abstract: No abstract text available
Text: ADV MICRO MEMORY MAE D Q257S2Û 0D304Ô4 b IA M D 4 T -4 6 -1 3 -2 9 Advanced Micro Devices Am27C2048 2 Megabit (131,072 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Fast access time -v 100 ns Low power consumption - 25 mA typical CMOS standby current
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Q257S2Ã
0D304Ã
Am27C2048
16-Bit)
-40-pin
44-pin
D257S2Ã
D03DMn
05-006B
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Untitled
Abstract: No abstract text available
Text: AD V MICRO MEMORY 4ÖE i> Ü2575SÔ DGaObSfi H T -4 6 -1 3 -2 5 Am27X2048 2 Megabit (131,072 x 16-Bit) CMOS ExpressROM Device 4 Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed
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2575SÃ
Am27X2048
16-Bit)
KS000010
0205-005A
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AM27C512
Abstract: AM27C512-120 am33c93a AM27C512-150 AM27C512-200 AM27C512-255DC ao,bh am33c93
Text: Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing
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Am27C512
28-pin
32-pin
Tcyc-10
Tcyc-25
Am33C93A
AM27C512-120
AM27C512-150
AM27C512-200
AM27C512-255DC
ao,bh
am33c93
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AM27S29A/BRA
Abstract: No abstract text available
Text: ADV MICRO IME 0 I 0257550 0007753 3 | MEMORY a Am27S29/Am27S29A/Am27S29SA Advanced Micro Devices 4,096-Bit 512x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • High Speed Highly reliable, ultra-fast programming Platinum-Silicide fuses • High programming yield
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Am27S29/Am27S29A/Am27S29SA
096-Bit
512x8)
Am27S29
512-words
TC003442
TC003452
KS000010
AM27S29A/BRA
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