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    CY62168DV30 Search Results

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    CY62168DV30 Price and Stock

    Flip Electronics CY62168DV30LL-55BVIT

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62168DV30LL-55BVIT Reel 20,000 100
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    Flip Electronics CY62168DV30LL-55BVI

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62168DV30LL-55BVI Tray 30 30
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    Infineon Technologies AG CY62168DV30LL-55BVI

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62168DV30LL-55BVI Tray
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    Infineon Technologies AG CY62168DV30LL-55BVXI

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62168DV30LL-55BVXI Tray
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    Infineon Technologies AG CY62168DV30LL-55BVIT

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62168DV30LL-55BVIT Reel
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    Avnet Americas CY62168DV30LL-55BVIT 0 Weeks, 2 Days 94
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    Find more CY62168DV30 price and stock on Findchips.com

    CY62168DV30 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY62168DV30 Cypress Semiconductor 16-Mbit (2048K x 8) Static RAM Original PDF
    CY62168DV30L-55BVI Cypress Semiconductor 16-Mbit (2048K x 8) Static RAM Original PDF
    CY62168DV30L-55BVXI Cypress Semiconductor Original PDF
    CY62168DV30L-70BVI Cypress Semiconductor 16-Mbit (2048K x 8) Static RAM Original PDF
    CY62168DV30L-70BVXI Cypress Semiconductor Original PDF
    CY62168DV30LL-55BVI Cypress Semiconductor 16-Mbit (2048K x 8) Static RAM Original PDF
    CY62168DV30LL-55BVI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48VFBGA Original PDF
    CY62168DV30LL-55BVIT Cypress Semiconductor 16-Mbit (2M x 8) MoBL(R) Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 2.20 to 3.60 V; Original PDF
    CY62168DV30LL-55BVIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48VFBGA Original PDF
    CY62168DV30LL-55BVXI Cypress Semiconductor Original PDF
    CY62168DV30LL-55BVXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48VFBGA Original PDF
    CY62168DV30LL-70BVI Cypress Semiconductor 16-Mbit (2048K x 8) Static RAM Original PDF
    CY62168DV30LL-70BVXI Cypress Semiconductor Original PDF

    CY62168DV30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62168DV30

    Abstract: CY62168DV30LL-55BVI CY62168DV30LL-55BVXI
    Text: CY62168DV30 MoBL 16-Mbit 2M x 8 MoBL® Static RAM Features reduces power consumption. The device can be put into standby mode reducing power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when


    Original     		PDF CY62168DV30 16-Mbit CY62168DV30LL-55BVI CY62168DV30LL-55BVXI

    Untitled

    Abstract: No abstract text available
    Text: CY62168DV30 MoBL 16-Mbit 2048K x 8 Static RAM Features power consumption by more than 99% when deselected Chip Enable 1 (CE 1) HIGH or Chip Enable 2 (CE2) LOW . The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1)


    Original     		PDF CY62168DV30 16-Mbit 2048K 48-ball

    AN1064

    Abstract: CY62168DV30 CY62168DV30LL-55BVI cypress AN1064 sram system guidelines
    Text: CY62168DV30 MoBL ® 16-Mbit 2 M x 8 MoBL Static RAM Features • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V – 3.6 V ■ Ultra-low active power ❐ Typical active current: 2 mA at f = 1 MHz ❐ Typical active current: 15 mA at f = fMax (55 ns Speed)


    Original     		PDF CY62168DV30 16-Mbit AN1064 CY62168DV30LL-55BVI cypress AN1064 sram system guidelines

    ultra fine pitch BGA

    Abstract: CY62168DV30 CY62168DV30LL-55BVI CY62168DV30LL-55BVXI
    Text: CY62168DV30 MoBL 16-Mbit 2M x 8 MoBL® Static RAM Features reduces power consumption. The device can be put into standby mode reducing power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when


    Original     		PDF CY62168DV30 16-Mbit ultra fine pitch BGA CY62168DV30LL-55BVI CY62168DV30LL-55BVXI

    Untitled

    Abstract: No abstract text available
    Text: MoBL CY62168DV30 PRELIMINARY 16M 2048K x 8 Static RAM Features power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW . The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1)


    Original     		PDF CY62168DV30 2048K 48-ball CY62168DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62168DV30 MoBL 16-Mbit 2 M x 8 Static RAM 16-Mbit (2 M × 8) Static RAM Features • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V–3.6 V ■ Ultra-low active power ❐ Typical active current: 2 mA at f = 1 MHz ❐ Typical active current: 15 mA at f = fMax (55 ns Speed)


    Original     		PDF CY62168DV30 16-Mbit

    Untitled

    Abstract: No abstract text available
    Text: CY62168DV30 MoBL  16-Mbit 2M x 8 MoBL Static RAM Features • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V – 3.6 V ■ Ultra-low active power ❐ Typical active current: 2 mA @ f = 1 MHz ❐ Typical active current: 15 mA @ f = fMax (55 ns Speed)


    Original     		PDF 16-Mbit CY62168DV30 48-ball

    Untitled

    Abstract: No abstract text available
    Text: MoBL CY62168DV30 PRELIMINARY 16M 2048K x 8 Static RAM Features power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW . The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1)


    Original     		PDF CY62168DV30 2048K 48-ball CY62168DV30

    CY62168DV30

    Abstract: CY62168DV30LL-55BVI
    Text: CY62168DV30 MoBL ® 16-Mbit 2M x 8 MoBL Static RAM Features • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V – 3.6 V ■ Ultra-low active power ❐ Typical active current: 2 mA @ f = 1 MHz ❐ Typical active current: 15 mA @ f = fMax (55 ns Speed)


    Original     		PDF CY62168DV30 16-Mbit CY62168DV30LL-55BVI

    55BVXI

    Abstract: CY62168DV30 CY62168DV30L-55BVXI CY62168DV30L-70BVXI CY62168DV30LL-55BVXI
    Text: CY62168DV30 MoBL 16-Mbit 2048K x 8 Static RAM Features addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW. The input/output pins (I/O0 through I/O7) are placed in


    Original     		PDF CY62168DV30 16-Mbit 2048K CY62168DV30 55BVXI CY62168DV30L-55BVXI CY62168DV30L-70BVXI CY62168DV30LL-55BVXI

    Untitled

    Abstract: No abstract text available
    Text: CY62168DV30 MoBL ® 16-Mbit 2 M x 8 MoBL Static RAM Features • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V – 3.6 V ■ Ultra-low active power ❐ Typical active current: 2 mA at f = 1 MHz ❐ Typical active current: 15 mA at f = fMax (55 ns Speed)


    Original     		PDF CY62168DV30 16-Mbit

    Untitled

    Abstract: No abstract text available
    Text: CY62168DV30 MoBL 16-Mbit 2048K x 8 MoBL® Static RAM Features addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW. The input/output pins (I/O0 through I/O7) are placed in


    Original     		PDF CY62168DV30 16-Mbit 2048K 48-ball

    cy62168dv30ll55bvi

    Abstract: CY62168DV30 CY62168DV30LL-55BVI
    Text: CY62168DV30 MoBL 16-Mbit 2M x 8 MoBL® Static RAM Features reduces power consumption. The device can be put into standby mode reducing power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when


    Original     		PDF CY62168DV30 16-Mbit cy62168dv30ll55bvi CY62168DV30LL-55BVI

    CY62167DV30L-55ZI

    Abstract: CY62167DV30
    Text: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed


    Original     		PDF CY62167DV30 16-Mbit I/O15) CY62167DV30 48-lead BV48A BV48B CY62167DV30L-55ZI

    CY62167DV30LL-70ZXI

    Abstract: 2057-01 Z48A BV48
    Text: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are


    Original     		PDF CY62167DV30 16-Mbit 48-ball 48-pin I/O15) 48-lead BV48A BV48B 45-ns CY62167DV30LL-70ZXI 2057-01 Z48A BV48

    CY62167DV30

    Abstract: CY62167DV30LL
    Text: CY62167DV30 MoBL 16 MB 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed


    Original     		PDF CY62167DV30 I/O15) CY62167DV30 CY62167DV30LL