VFBGA
Abstract: BV48A BV36A
Text: Package Diagram VFBGA 36-Lead VFBGA 6 x 8 x 1 mm BV36A 51-85149-* 1 Package Diagram 48-Lead VFBGA (6 x 8 x 1 mm) BV48A 51-85150-* 2
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36-Lead
BV36A
48-Lead
BV48A
VFBGA
BV48A
BV36A
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Untitled
Abstract: No abstract text available
Text: CY7C1069G CY7C1069GE PRELIMINARY 16-Mbit 2 M words x 8 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (2 M words × 8 bit) Static RAM with Error-Correcting Code (ECC) Features an error indication pin (ERR) that signals the host processor in the case of an ECC error-detection and correction event.
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CY7C1069G
CY7C1069GE
16-Mbit
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip
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CY7C1061G/CY7C1061GE
16-Mbit
ns/15
90-mA
20-mA
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Untitled
Abstract: No abstract text available
Text: CY62136EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Very high speed: 45 ns ■ Wide voltage range: 2.20 V to 3.60 V ■ Pin compatible with CY62136CV30 ■ Ultra low standby power ❐ Typical standby current: 1 A
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CY62136EV30
CY62136CV30
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CY62137EV30
Abstract: No abstract text available
Text: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an
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CY62137EV30
CY62137CV30
48-ball
44-pin
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WCMC4016V9B-55
Abstract: No abstract text available
Text: WCMC4016V9B ADVANCE INFORMATION 4Mb 256K x 16 Pseudo Static RAM Features HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High
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WCMC4016V9B
I/O15)
WCMC4016V9B
WCMC4016V9B-55
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CYK128K16SCCB
Abstract: No abstract text available
Text: CYK128K16SCCB 2-Mbit 128K x 16 Pseudo Static RAM Functional Description[1] Features • Advanced low power MoBL architecture The CYK128K16SCCB is a high-performance CMOS pseudo static RAMs (PSRAM) organized as 128K words by 16 bits that supports an asynchronous memory interface. This device
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CYK128K16SCCB
CYK128K16SCCB
I/O15)
CYK128K16SCCBU
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Untitled
Abstract: No abstract text available
Text: CY81U032X16A7A MoBL3 PRELIMINARY 32M 2M x 16 SRAM Features (OE HIGH), or during a write operation (CE LOW and WE LOW). • Very high speed: 70 ns • Advanced low-power MoBL architecture • Wide voltage range: — VCC range: 2.3V – 3.1V • • •
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CY81U032X16A7A
I/O15)
CY81U032X16A7A
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14027
Abstract: BV48A WCMC1616V9X WCMC1616V9X-FI70
Text: ADVANCE INFORMATION WCMC1616V9X 1Mb x 16 Pseudo Static RAM Features • 1T Cell, PSRAM Architecture • High speed: 70 ns • Wide Voltage range: — VCC range: 2.7V to 3.3V • Low active power — Typical active current: 2 mA @ f = 1 MHz — Typical active current: 13 mA @ f = fMAX
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WCMC1616V9X
WCMC1616V9X
14027
BV48A
WCMC1616V9X-FI70
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cy7c1019dv
Abstract: No abstract text available
Text: CY7C1019DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1019CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS Standby Power
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CY7C1019DV33
CY7C1019DV33
cy7c1019dv
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CY62157EV30LL-45BVXI
Abstract: TSOP 48 thermal resistance
Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges
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CY62157EV30
I/O15)
CY62157EV30LL-45BVXI
TSOP 48 thermal resistance
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P4505
Abstract: intel i5 520M BGA1288 core i7 i5-520M i5-520E CATERR intel celeron 633 AA-64 CATERR DEASSERTED
Text: Intel CoreTM i7-660UE, i7-620LE/ UE, i7-610E, i5-520E, i3-330E and Intel® Celeron® Processor P4505, U3405 Series Datasheet Addendum August 2010 Document Number: 323178-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR
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i7-660UE,
i7-620LE/
i7-610E,
i5-520E,
i3-330E
P4505,
U3405
i7-620LE/UE,
P4505
intel i5 520M
BGA1288
core i7
i5-520M
i5-520E
CATERR
intel celeron 633
AA-64
CATERR DEASSERTED
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WCMC2016V9B-55
Abstract: z1012
Text: WCMC2016V9B 2-Mbit 128K x 16 Pseudo Static RAM Features can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2
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WCMC2016V9B
I/O15)
WCMC2016V9B
WCMC2016V9B-55
z1012
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Untitled
Abstract: No abstract text available
Text: CY62177V25 MoBL3 PRELIMINARY 32M MoBL3 SRAM Features are disabled OE HIGH , or during a Write operation (CE LOW and WE LOW). • Advanced low-power MoBL Architecture • Wide voltage range: — VCC range: 2.3V – 3.1V • • • • • Writing to the device is accomplished by taking Chip Enable
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CY62177V25
I/O15)
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BGA1288
Abstract: rPGA-988 circuit diagram laptop motherboard CN80617005745AB arrandale cn80617 i3 laptop MOTHERBOARD pcb CIRCUIT diagram i7-600 Mobile INTEL nehalem CPU arrandale MSR
Text: Intel Core i7-600, i5-500, i5-400 and i3-300 Mobile Processor Series Datasheet — Volume One This is volume 1 of 2. Refer to document 322813 for Volume 2 January 2010 Document Number: 322812-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,
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i7-600,
i5-500,
i5-400
i3-300
i7-610E
11-Feb-2011
BGA1288
rPGA-988
circuit diagram laptop motherboard
CN80617005745AB
arrandale
cn80617
i3 laptop MOTHERBOARD pcb CIRCUIT diagram
i7-600 Mobile
INTEL nehalem CPU
arrandale MSR
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A23 851 diode
Abstract: 741p BGA1288 AC-DC Adapter circuit diagram laptop motherboard power supply diagram of laptop motherboard do regulator 2gb 3.3v AK66 Diode AF51 intel Penryn
Text: Intel Celeron® Mobile Processor P4000 and U3000 Series Datasheet Revision 001 October 2010 Document Number: 324471-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS
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P4000
U3000
A23 851 diode
741p
BGA1288
AC-DC Adapter
circuit diagram laptop motherboard
power supply diagram of laptop motherboard do
regulator 2gb 3.3v
AK66
Diode AF51
intel Penryn
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CY62167DV18L-55
Abstract: CY62167DV18LL-55 CY62167DV18
Text: CY62167DV18 MoBL2 PRELIMINARY 16M 1024K x 16 Static RAM Features • Very high speed: 55 ns and 70 ns • Voltage range: 1.65V to 1.95V • Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz — Typical active current: 15 mA @ f = fMAX
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CY62167DV18
1024K
I/O15)
CY62167DV18MoBL2TM
CY62167DV18L-55
CY62167DV18LL-55
CY62167DV18
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Untitled
Abstract: No abstract text available
Text: THIS SPEC IS OBSOLETE Spec No: 38-05391 Spec Title: CY62158DV30 MoBL, 8-Mbit 1024K x 8 MoBL Static RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62158DV30 MoBL 8-Mbit (1024K x 8) MoBL® Static RAM This is ideal for providing More Battery Life (MoBL®) in
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CY62158DV30
1024K
CY62158DV30
CY62158DV
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Untitled
Abstract: No abstract text available
Text: CY62168EV30 MoBL 16-Mbit 2 M x 8 Static RAM 16-Mbit (2 M × 8) Static RAM Features automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing the device into standby mode reduces power consumption by
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CY62168EV30
16-Mbit
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CY62167DV30L-55ZI
Abstract: CY62167DV30
Text: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed
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CY62167DV30
16-Mbit
I/O15)
CY62167DV30
48-lead
BV48A
BV48B
CY62167DV30L-55ZI
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip
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CY7C1061G/CY7C1061GE
16-Mbit
ns/15
90-mA
20-mA
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ultra fine pitch BGA
Abstract: CY62147CV25 CY62147CV30 CY62147CV33 CY62147V
Text: 47V CY62147CV25/30/33 MoBL 256K x 16 Static RAM Features cantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are
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CY62147CV25/30/33
I/O15)
CY62147CV25:
CY62147CV30:
CY62147CV33:
CY62147V
CY62147CV25/30/33
ultra fine pitch BGA
CY62147CV25
CY62147CV30
CY62147CV33
CY62147V
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CYK128K16SCCB
Abstract: No abstract text available
Text: CYK128K16SCCB 2-Mbit 128K x 16 Pseudo Static RAM Functional Description[1] Features • Advanced low-power MoBL architecture The CYK128K16SCCB is a high-performance CMOS pseudo static RAM (PSRAM) organized as 128K words by 16 bits that supports an asynchronous memory interface. This device
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CYK128K16SCCB
CYK128K16SCCB
I/O15)
CYK128K16SCCBU
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Untitled
Abstract: No abstract text available
Text: PHOTOFET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET
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H11F1
H11F2
H11F3
ST1603
74bbfl51
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