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    CY62126DV30 Price and Stock

    Rochester Electronics LLC CY62126DV30L-55ZIT

    IC SRAM 1MBIT PARALLEL 44TSOP II
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    DigiKey CY62126DV30L-55ZIT Bulk 10,000 239
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    Rochester Electronics LLC CY62126DV30L-55ZI

    IC SRAM 1MBIT PARALLEL 44TSOP II
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    DigiKey CY62126DV30L-55ZI Bulk 3,451 239
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    Rochester Electronics LLC CY62126DV30LL-55BVI

    IC SRAM 1MBIT PARALLEL 48VFBGA
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    DigiKey CY62126DV30LL-55BVI Bulk 3,378 333
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    Rochester Electronics LLC CY62126DV30LL-55BVXI

    IC SRAM 1MBIT PARALLEL 48VFBGA
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    DigiKey CY62126DV30LL-55BVXI Bulk 1,791 296
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    Rochester Electronics LLC CY62126DV30LL-70ZI

    IC SRAM 1MBIT PARALLEL 44TSOP II
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    DigiKey CY62126DV30LL-70ZI Bulk 991 207
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    Find more CY62126DV30 price and stock on Findchips.com

    CY62126DV30 Datasheets (66)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY62126DV30 Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62126DV30L Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY62126DV30L-55BAI Cypress Semiconductor SRAM Chip, Asynchronous, 1Mbit, SDR, 2.5V|3.3V Supply, Industrial, FBGA, 48-Pin Original PDF
    CY62126DV30L-55BAI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62126DV30L-55BAIT Cypress Semiconductor SRAM Chip, 1MB (64Kx16) Static RAM, Tape and Reel Original PDF
    CY62126DV30L-55BAXI Cypress Semiconductor IC SRAM CHIP ASYNC SINGLE 2.5V|3.3V 1MBIT 64KX16 Original PDF
    CY62126DV30L-55BAXIT Cypress Semiconductor IC SRAM CHIP ASYNC SINGLE 2.5V|3.3V 1MBIT 64KX16 55NS Original PDF
    CY62126DV30L-55BVI Cypress Semiconductor 1 MB (64k x 16) Static RAM Original PDF
    CY62126DV30L-55BVI Cypress Semiconductor SRAM Chip, 1MB (64Kx16) Static RAM Original PDF
    CY62126DV30L-55BVI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62126DV30L-55BVIT Cypress Semiconductor IC SRAM CHIP ASYNC SINGLE 2.5V|3.3V 1MBIT 64KX16 55NS Original PDF
    CY62126DV30L-55BVXE Cypress Semiconductor MoBL 1-Mbit (64K x 16) Static RAM Original PDF
    CY62126DV30L-55BVXET Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 55NS 48VFBGA Original PDF
    CY62126DV30L-55BVXIT Cypress Semiconductor IC SRAM CHIP ASYNC SINGLE 2.5V|3.3V 1MBIT 64KX16 55NS Original PDF
    CY62126DV30L-55ZI Cypress Semiconductor SRAM Chip, Asynchronous, 1Mbit, SDR, 2.5V|3.3V Supply, Industrial, TSOP II, 44-Pin Original PDF
    CY62126DV30L-55ZI Cypress Semiconductor 1 MB (64k x 16) Static RAM Original PDF
    CY62126DV30L-55ZI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62126DV30L-55ZSI Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY62126DV30L-55ZSXE Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 55NS 44TSOP Original PDF
    CY62126DV30L-55ZSXET Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 55NS 44TSOP Original PDF

    CY62126DV30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62126DV30L

    Abstract: CY62126DV30LL CY62126BV CY62126DV30 CY62126DV30LL-55ZXI
    Text: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly


    Original     		PDF CY62126DV30 I/O15) 44-pin 56-Lead 56-pin CY62126DV30L CY62126DV30LL CY62126BV CY62126DV30LL-55ZXI

    BV48A

    Abstract: No abstract text available
    Text: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not


    Original     		PDF CY62126DV30 CY62126BV 48-ball 44-lead 44-pin CY62126DV30-L BV48A

    Untitled

    Abstract: No abstract text available
    Text: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly


    Original     		PDF CY62126DV30 CY62126BV 48-ball 44-pin 56-Lead 56-pin

    CY62126BV

    Abstract: CY62126DV30 CY62126DV30L
    Text: 26DV30 ADVANCE INFORMATION CY62126DV30 MoBL 64K x 16 Static RAM Features • • • • • • • • • reduces power consumption by 90% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when


    Original     		PDF 26DV30 CY62126DV30 I/O15) CY62126BV CY62126BV CY62126DV30L

    CY62126BV

    Abstract: CY62126DV30 CY62126DV30L
    Text: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing


    Original     		PDF CY62126DV30 I/O15) CY62126DV30 70-ns CY62126BV CY62126DV30L

    Untitled

    Abstract: No abstract text available
    Text: CY62126DV30 MoBL PRELIMINARY 1 Mb 64K x 16 Static RAM Features • • • • • • • • Very high speed: 55 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62126BV Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX


    Original     		PDF CY62126DV30 CY62126BV 48-ball 44-lead CY62126DV30

    AN1064

    Abstract: CY62126DV30 CY62126EV30
    Text: CY62126EV30 MoBL 1-Mbit 64K x 16 Static RAM Features • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive: –40 °C to +125 °C ■ Wide voltage range: 2.2 V to 3.6 V ■ Pin compatible with CY62126DV30 ■


    Original     		PDF CY62126EV30 CY62126DV30 I/O15) AN1064 CY62126DV30

    CY62126BV

    Abstract: CY62126DV30 CY62126DV30L CY62126DV30LL
    Text: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not


    Original     		PDF CY62126DV30 I/O15) CY62126DV30-L 44-pin 56-Lead CY62126BV CY62126DV30 CY62126DV30L CY62126DV30LL

    TSOP 48 thermal resistance junction to case

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • High speed: 45 ns • Wide voltage range: 2.2V–3.6V • Pin-compatible with CY62126DV30 • Ultra-low standby power — Typical standby current: 1 µA — Maximum standby current: 4 µA


    Original     		PDF CY62126EV30 CY62126DV30 48-ball 44-pin TSOP 48 thermal resistance junction to case

    CY62126BV

    Abstract: CY62126DV30 CY62126DV30L CY62126DV30LL
    Text: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected (CE


    Original     		PDF CY62126DV30 I/O15) CY62126BV 70-ns 45-ns 44-pin CY62126BV CY62126DV30 CY62126DV30L CY62126DV30LL

    CY62126BV

    Abstract: CY62126DV30 CY62126DV30L BV48
    Text: CY62126DV30 MoBL 1 Mb 64K x 16 Static RAM Features • • • • • • • • Very high speed: 55 and 70 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62126BV Ultra-low active power — Typical active current: 0.85 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX


    Original     		PDF CY62126DV30 CY62126BV 48-ball 44-lead CY62126DV30 70-ns CY62126BV CY62126DV30L BV48

    Untitled

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64K x 16 Static RAM Features • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive: –40 °C to +125 °C ■ Wide voltage range: 2.2 V to 3.6 V ■ Pin compatible with CY62126DV30 ■


    Original     		PDF CY62126EV30 CY62126DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62126DV30 MoBL 1 Mb 64K x 16 Static RAM Features • • • • • • • • Very high speed: 55 and 70 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62126BV Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX


    Original     		PDF CY62126DV30 CY62126BV 48-ball 44-lead CY62126DV30

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


    Original     		PDF 32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D

    Untitled

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62126EV30 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C


    Original     		PDF CY62126EV30 CY62126DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62126EV30 I/O15)

    AN1384

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62126EV30 I/O15) 727-CY26EV30LL45ZSXI CY62126EV30LL-45ZSXI AN1384

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    Untitled

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64K x 16 Static RAM Functional Description [1] Features • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current.


    Original     		PDF CY62126EV30 CY62126DV30 48-ball 44-pin

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


    Original     		PDF Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN

    Untitled

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		PDF CY62126EV30 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C


    Original     		PDF CY62126EV30 CY62126DV30