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    KEMET Corporation C1812C224K5RACTU

    CAP CER 0.22UF 50V X7R 1812
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    DigiKey C1812C224K5RACTU Digi-Reel 3,320 1
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    C1812C224K5RACTU Cut Tape 3,320 1
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    C1812C224K5RACTU Reel 1,000 1,000
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    Avnet Americas C1812C224K5RACTU Reel 5,000 9 Weeks 1,000
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    Mouser Electronics C1812C224K5RACTU 7,745
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    Verical C1812C224K5RACTU 200 186
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    C1812C224K5RACTU 63 42
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    Arrow Electronics C1812C224K5RACTU Cut Strips 63 8 Weeks 1
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    Newark C1812C224K5RACTU Cut Tape 106 1
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    RS C1812C224K5RACTU Bulk 1,000
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    Bristol Electronics C1812C224K5RACTU 1,855
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    Quest Components C1812C224K5RACTU 2,790
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    C1812C224K5RACTU 1,545
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    C1812C224K5RACTU 1,484
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    TTI C1812C224K5RACTU Cut Tape 650 25
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    TME C1812C224K5RACTU 200 1
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    NexGen Digital C1812C224K5RACTU 2
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    Component Electronics, Inc C1812C224K5RACTU 800
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    KEMET Corporation C1812C224K5RAC

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 0.22uF X7R 1812 10%
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    Mouser Electronics C1812C224K5RAC 764
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    KEMET Corporation C1812C224K5RAC7800

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 0.22uF X7R 1812 10%
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    TTI C1812C224K5RAC7800 Reel 50,000 1,000
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    C1812C224K5RACTU Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C1812C224K5RACTU KEMET Ceramic Capacitors, Capacitors, CAP CER 0.22UF 50V 10% X7R 1812 Original PDF
    C1812C224K5RACTU KEMET CAP 0.22UF 50V 10% X7R SMD-1812 TR-7-PL SN-NIBAR Original PDF

    C1812C224K5RACTU Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: C1812C224K5RACTU C1812C224K5RAC7800 Capacitor, ceramic, 0.22 uF, +/-10% Tol, 50V, X7R, 1812 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications


    Original     		C1812C224K5RACTU C1812C224K5RAC7800) ce462cea-5d2d-4652-93a5-207208abf355 PDF

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: C1812C224K5RACTU C1812C224K5RAC7800 Capacitor, ceramic, 0.22 uF, +/-10% Tol, 50V, X7R, 1812 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications


    Original     		C1812C224K5RACTU C1812C224K5RAC7800) PDF

    mrfe6vp5600hs

    Abstract: MRFE6VP5600H
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1 PDF

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X PDF

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5 PDF

    Z25 transistor

    Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 Z25 transistor ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 PDF

    UT-90-25

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1305H Rev. 0, 12/2013 RF Power LDMOS Transistors MMRF1305HR5 MMRF1305HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or


    Original     		MMRF1305H MMRF1305HR5 MMRF1305HSR5 MMRF1305HR5 UT-90-25 PDF

    RF1000LF

    Abstract: RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in


    Original     		MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1 RF1000LF RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 AFT05MP075NR1 PDF

    RR1220P-102-D

    Abstract: D58764 HSF-141C-35
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 1, 7/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR


    Original     		MRFE6VP5150N MRFE6VP5150NR1 MRFE6VP5150GNR1 MRFE6VP5150NR1 RR1220P-102-D D58764 HSF-141C-35 PDF

    TUI-lf-9

    Abstract: ATC700B392JT50X
    Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched


    Original     		MMRF1016H MMRF1016HR5 7/2014Semiconductor, TUI-lf-9 ATC700B392JT50X PDF

    G2225X7R225KT3AB

    Abstract: m27500 transfer impedance
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5 G2225X7R225KT3AB m27500 transfer impedance PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 1, 6/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		MRF6VP2600H MRF6VP2600HR6 PDF

    ATC100B102JT50XT

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V2300N Rev. 5, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in


    Original     		MRF6V2300N MRF6V2300NR1 MRF6V2300NBR1 MRF6V2300NR1 ATC100B102JT50XT PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25HR6 PDF

    MRF6VP2600KH

    Abstract: TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		MRF6VP2600H 20ficers, MRF6VP2600HR6 MRF6VP2600KH TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw PDF

    MRFE6VP61

    Abstract: MRFE6VP 1812sms-39njlc MRFE6VP61K25H J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 3, 10/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25GSR5 MRFE6VP61 MRFE6VP 1812sms-39njlc J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1308H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR military, aerospace and defense, industrial including laser and plasma exciters ,


    Original     		MMRF1308H MMRF1308HR5 MMRF1308HSR5 7/2014Semiconductor, PDF

    HSF-141C-35

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 0, 5/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR


    Original     		MRFE6VP5150N MRFE6VP5150NR1 MRFE6VP5150GNR1 MRFE6VP5150NR1 5/2014Semiconductor, HSF-141C-35 PDF

    MRFE6VP61K25H

    Abstract: MRFE6VP61K25HR6 AN1955 mrfe6vp61k2 A02TKLC ad255 HSR6 UT141C
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 1, 1/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25H AN1955 mrfe6vp61k2 A02TKLC ad255 HSR6 UT141C PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20S015N Rev. 1, 11/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz.


    Original     		AFT20S015N AFT20S015NR1 AFT20S015GNR1 AFT20S015NR1 PDF