G2225X7R225KT3AB
Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.
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MRF6VP2600H
MRF6VP2600HR6
G2225X7R225KT3AB
MRF6VP2600KH
TUI-lf-9
UT-141C-25
DVB-T Schematic
tuo-4
MRF6VP2600H
AN1955
ATC100B470JT500XT
MRF6VP2600HR6
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TUI-lf-9
Abstract: ATC700B392JT50X
Text: Document Number: MMRF1016H Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched
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MMRF1016H
MMRF1016HR5
7/2014Semiconductor,
TUI-lf-9
ATC700B392JT50X
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.
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Original
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PDF
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MRF6VP2600H
MRF6VP2600HR6
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MRF6VP2600KH
Abstract: TUI-lf-9 MRF6VP2600H ATC700B392JT50X ATC100B221 transistor j380 88-108 88-108 rf amplifier UT-141C-25 5093nw
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5.1, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.
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Original
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PDF
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MRF6VP2600H
20ficers,
MRF6VP2600HR6
MRF6VP2600KH
TUI-lf-9
MRF6VP2600H
ATC700B392JT50X
ATC100B221
transistor j380
88-108
88-108 rf amplifier
UT-141C-25
5093nw
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