ic 8237
Abstract: No abstract text available
Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily
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BPW16N
BPW16N
CQY36N
2002/95/EC
08-Apr-05
ic 8237
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8239
Abstract: BPW16N CQY36N
Text: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
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BPW16N
BPW16N
CQY36N
D-74025
20-May-99
8239
CQY36N
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Untitled
Abstract: No abstract text available
Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily
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BPW16N
BPW16N
CQY36N
200any
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW16N
2002/95/EC
2002/96/EC
BPW16N
11-Mar-11
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CQY36
Abstract: BPW16N BPW16
Text: BPW16N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable
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BPW16N
BPW16N
D-74025
15-Jul-96
CQY36
BPW16
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Untitled
Abstract: No abstract text available
Text: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW16N
2002/95/EC
2002/96/EC
BPW16N
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
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5047 npn
Abstract: 8239 BPW16N npn phototransistor pf494
Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW16N
2002/95/EC
2002/96/EC
BPW16N
54lectual
18-Jul-08
5047 npn
8239
npn phototransistor
pf494
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BPW16N
Abstract: CQY36N
Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily
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Original
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PDF
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BPW16N
BPW16N
CQY36N
08-Apr-05
CQY36N
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Untitled
Abstract: No abstract text available
Text: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
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BPW16N
BPW16N
CQY36N
D-74025
20-May-99
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BPW16N
Abstract: CQY 24
Text: TELEFUNKEN Semiconductors BPW 16 N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are
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BPW16N
D-74025
CQY 24
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Untitled
Abstract: No abstract text available
Text: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW16N
2002/95/EC
2002/96/EC
BPW16N
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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CQY36N
Abstract: BPW16N ic 8236 8237 diode
Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily
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BPW16N
BPW16N
CQY36N
D-74025
08-Mar-05
CQY36N
ic 8236
8237 diode
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BPW16N
Abstract: CQY36N
Text: BPW16N Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
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BPW16N
BPW16N
CQY36N
D-74025
20-May-99
CQY36N
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BPW16N
Abstract: CQY36N
Text: BPW16N Vishay Telefunken Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are easily stackable on PC boards and assembled to arrays of
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BPW16N
BPW16N
CQY36N
D-74025
20-May-99
CQY36N
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CQY36
Abstract: No abstract text available
Text: BPW16N VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54 mm and a package width of 2.4 mm the devices are easily
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BPW16N
BPW16N
CQY36N
D-74025
26-Mar-04
CQY36
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Untitled
Abstract: No abstract text available
Text: CQY36N Vishay Telefunken ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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CQY36N
CQY36N
BPW16N
D-74025
20-May-99
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BPW16N
Abstract: CQY36N
Text: CQY36N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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CQY36N
CQY36N
BPW16N
D-74025
20-May-99
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Untitled
Abstract: No abstract text available
Text: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity: = ± 55°
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CQY36N
BPW16N
2002/95/EC
2002/96/EC
CQY36N
11-Mar-11
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A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer
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90F8548
SDP8600-001
95F5325
SDP8371-001
28H5849
28H5850
OPB933W55Z
08F2750
OPB963T55
08F2755
A 69157 scr
65k5
HEDS 5300
HCPL-900J-000E
HCPL 0636
DT 8210 IC
hcpl788
hcpl 1360
HEDS 8210
83K3
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7919
Abstract: No abstract text available
Text: CQY36N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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CQY36N
CQY36N
BPW16N
D-74025
29-Mar-04
7919
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CQY36
Abstract: BPW16N CQY36N
Text: CQY36N Vishay Semiconductors ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.
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Original
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CQY36N
CQY36N
BPW16N
D-74025
20-May-99
CQY36
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Untitled
Abstract: No abstract text available
Text: Temic BPW16N S e m i c o n d u c t o r s Silicon NPN Phototransistor Description B P W 1 6 N is a s ilic o n N P N e p ita x ia l p la n a r p h o to tra n s is to r in a m in ia tu re p la stic c a s e w ith fla t w in d o w . W ith a le a d c e n te r to c e n te r s p a c in g o f 2 .5 4 m m a n d a
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PDF
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BPW16N
15-Jul-96
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BPW85C
Abstract: No abstract text available
Text: Tem ic S e m i c o n d u c t o r s Detectors Photo Transistors .fe-'. . . Photo - Sensitive Package . •: . Cbaraaeristiès jfca^MA V E e/fflW /Ö B ^ C V C Ç -5V , TVpe X => 950 um I r —S mA., X » 950w n) Photo Transistors in Clear Plastic Package
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PDF
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BPW16N
BPW17N
BPW85A
BPW85B
BPW85C
BPW96A
BPW96B
BPW96C
BPV11
TEMT2100
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c1g smd
Abstract: bpv10nf TEMD2100
Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -
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CQY36N
CQY37N
TSUS4300
TSUS4400
CQX48A
CQX48B
TSSS2600
TSUS5200
TSUS5201
TSUS5202
c1g smd
bpv10nf
TEMD2100
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