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    9N65 Search Results

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    9N65 Price and Stock

    Rochester Electronics LLC 74HCT139N,652

    IC DECODER/DEMUX 1X2:4 16DIP
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    DigiKey 74HCT139N,652 Tube 20,068 1,025
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    Rochester Electronics LLC 74HCT109N,652

    IC FF JK TYPE DUAL 1BIT 16DIP
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    DigiKey 74HCT109N,652 Tube 11,998 761
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    • 1000 $0.39
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    onsemi FCB199N65S3

    MOSFET N-CH 650V 14A D2PAK
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    DigiKey FCB199N65S3 Reel 8,800 800
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    Avnet Americas FCB199N65S3 Reel 4 Weeks 1
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    Mouser Electronics FCB199N65S3 8,789
    • 1 $3.73
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    • 100 $2.53
    • 1000 $1.92
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    Rochester Electronics FCB199N65S3 10 1
    • 1 $2.03
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    Richardson RFPD FCB199N65S3 800
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    Avnet Asia FCB199N65S3 14 Weeks 800
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    Avnet Silica FCB199N65S3 15 Weeks 800
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    EBV Elektronik FCB199N65S3 16 Weeks 800
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    Micro Commercial Components MSJP09N65A-BP

    N-CHANNEL MOSFET, TO-220AB(H)
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    DigiKey MSJP09N65A-BP Tube 5,000 1
    • 1 $1.55
    • 10 $1.271
    • 100 $0.9882
    • 1000 $0.68231
    • 10000 $0.58349
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    Vishay Siliconix IRFB9N65APBF-BE3

    MOSFET N-CH 650V 8.5A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFB9N65APBF-BE3 Tube 860 1
    • 1 $1.92
    • 10 $1.92
    • 100 $1.3074
    • 1000 $1.27876
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    Find more 9N65 price and stock on Findchips.com

    9N65 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 9N65K-MT Power MOSFET 9A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N65K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 9N65K-MT 9N65K-MT QW-R205-017

    618 MOSFET

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N65 Preliminary Power MOSFET 9A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF O-220 QW-R502-618 618 MOSFET

    9N65

    Abstract: 618 MOSFET MOSFET 618 9A650V 618 diode
    Text: UNISONIC TECHNOLOGIES CO., LTD 9N65 Preliminary Power MOSFET 9A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 9N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF QW-R502-618 9N65 618 MOSFET MOSFET 618 9A650V 618 diode

    9N65

    Abstract: DMG9N DMG9N65CT 9N65CT
    Text: 9N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original     		PDF DMG9N65CT O-220AB AEC-Q101 O-220AB, DS35619 9N65 DMG9N DMG9N65CT 9N65CT

    650VVGS

    Abstract: No abstract text available
    Text: 9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original     		PDF DMG9N65CTI ITO-220AB AEC-Q101 DS36027 650VVGS

    Untitled

    Abstract: No abstract text available
    Text: 9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original     		PDF DMG9N65CTI ITO-220AB AEC-Q101 DS36027

    LTC4098-3.6

    Abstract: A20-LCD15.6 SXA-01GW-P0.6
    Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current


    Original     		PDF IFS75B12N3E4 428654F4 D3265 ECFC24 B32DC CD3289 ECFC26 B32DC6 C36B3 1231423567896AB LTC4098-3.6 A20-LCD15.6 SXA-01GW-P0.6

    DMG9N65CT

    Abstract: No abstract text available
    Text: 9N65CT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description •      This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original     		PDF DMG9N65CT O-220AB AEC-Q101 DS35619 DMG9N65CT

    Untitled

    Abstract: No abstract text available
    Text: 9N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original     		PDF DMG9N65CT O-220AB AEC-Q101 DS35619

    Untitled

    Abstract: No abstract text available
    Text: 9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original     		PDF DMG9N65CTI ITO-220AB AEC-Q101 DS36027

    Untitled

    Abstract: No abstract text available
    Text: I X Y S CORP lflE D • 4bñb25b 0000L.31 □ ■ □IX Y S IX TE 9N 65X 4 MAXIMUM RATINGS PER DEVICE 9N65X4 Unit Parameter Sym. Drain-Source Voltage (1) Vd ss 650 Vdc Vd g r 650 Vdc Vg s ±20 Vdc Vg s m ±30 V Drain-Gate Voltage (R g s = I.OMft) (1)


    OCR Scan     		PDF 0000L IXTE9N65X4