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    Abstract: No abstract text available
    Text: I X Y S CORP lflE D • 4bñb25b 0000L.31 □ ■ □IX Y S IX TE 9N 65X 4 MAXIMUM RATINGS PER DEVICE IXTE9N65X4 Unit Parameter Sym. Drain-Source Voltage (1) Vd ss 650 Vdc Vd g r 650 Vdc Vg s ±20 Vdc Vg s m ±30 V Drain-Gate Voltage (R g s = I.OMft) (1)


    OCR Scan     		PDF 0000L IXTE9N65X4

    f g megamos

    Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
    Text: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested


    OCR Scan     		PDF ofMIL-S-19500 MIL-M-38510. f g megamos megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE

    f g megamos

    Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
    Text: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested


    OCR Scan     		PDF fit55t Q000563 f g megamos megamos 13 megamos IXGE75N100Z ID 48 Megamos