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    9936 MOSFET Search Results

    9936 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    9936/BCA Rochester Electronics LLC 9936 - Hex Inverter - Dual marked (M38510/03003BCA) Visit Rochester Electronics LLC Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    9936 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9936 mosfet

    Abstract: G1 8645
    Text: IRF6150 PROVISIONAL Bi-Directional MOSFET Outline Dimension NOTES : 1. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES]. 2. CONTROLLING DIMENSION: [INCH]. 3.124 2X [.123] S1 S1 3. LET TER DES IGNAT ION: S2 S = SOURCE SK = SOURCE KELVIN G = GAT E IS = CURRENT SENSE


    Original     		PDF IRF6150 9936 mosfet G1 8645

    smps 450 W

    Abstract: IRFPS43N50K
    Text: PD- 93922 PROVISIONAL IRFPS43N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and


    Original     		PDF IRFPS43N50K Super-247TM Voltage252-7105 smps 450 W IRFPS43N50K

    014 IR MOSFET Transistor

    Abstract: IRFBA32N50K
    Text: PD- 93924 PROVISIONAL IRFBA32N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and


    Original     		PDF IRFBA32N50K Super-220TM Diode252-7105 014 IR MOSFET Transistor IRFBA32N50K

    IRFBA34N50C

    Abstract: No abstract text available
    Text: PD- 93931 PROVISIONAL IRFBA34N50C SMPS MOSFET Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.070Ω 40A 500V Benefits l Low Gate Charge Qg results in Simple


    Original     		PDF IRFBA34N50C Super-220TM Re252-7105 IRFBA34N50C

    IRFPS60N50C

    Abstract: No abstract text available
    Text: PD- 93932 PROVISIONAL IRFPS60N50C SMPS MOSFET Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.038Ω 60A 500V Benefits l Low Gate Charge Qg results in Simple


    Original     		PDF IRFPS60N50C Super-247TM Re252-7105 IRFPS60N50C

    diode 8645

    Abstract: SMPS 30v diode ir 838 IRFBA31N50L offline smps
    Text: PD- 93925 PROVISIONAL IRFBA31N50L SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l Motor Control l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics


    Original     		PDF IRFBA31N50L Super-220TM D252-7105 diode 8645 SMPS 30v diode ir 838 IRFBA31N50L offline smps

    IRF580

    Abstract: No abstract text available
    Text: PD- 94044 PROVISIONAL IRF5801 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		PDF IRF5801 AN1001) IRF580

    IRF 930

    Abstract: IRFPS40N50L 93923 IRFPS40N50
    Text: PD- 93923 PROVISIONAL IRFPS40N50L SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l Motor Control l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics


    Original     		PDF IRFPS40N50L Super-247TM Dissipatio252-7105 IRF 930 IRFPS40N50L 93923 IRFPS40N50

    IRF6150

    Abstract: IR 30 S2
    Text: PD - 93943 PROVISIONAL IRF6150 HEXFET Power MOSFET l l l l l Ultra Low RSS on per Footprint Area Low Thermal Resistance Bi-Directional P-Channel Switch Super Low Profile (<.8mm) Available Tested on Tape & Reel VSS -20V RSS(on) max IS 0.036Ω@VGS1,2 = -4.5V -7.9A


    Original     		PDF IRF6150 IRF6150 IR 30 S2

    Untitled

    Abstract: No abstract text available
    Text: PD -90413 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9024 60V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF9024 -60V 0.28Ω ID -6.4A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF O-205AF) IRFF9024

    Untitled

    Abstract: No abstract text available
    Text: PD - 90577 IRFAF50 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF50 BVDSS 900V RDS(on) ID 1.6Ω 6.2Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAF50 O-204AA/AE)

    Untitled

    Abstract: No abstract text available
    Text: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAE50 O-204AA/AE)

    inverter MOSFET 900V 3A

    Abstract: IRFAF40
    Text: PD - 90581 IRFAF40 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF40 BVDSS 900V RDS(on) 2.5Ω ID 4.3Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAF40 O-204AA/AE) p252-7105 inverter MOSFET 900V 3A IRFAF40

    IRFAF50

    Abstract: No abstract text available
    Text: PD - 90577 IRFAF50 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF50 BVDSS 900V RDS(on) ID 1.6Ω 6.2Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAF50 O-204AA/AE) par252-7105 IRFAF50

    IRF054

    Abstract: No abstract text available
    Text: PD - 90640 IRF054 60V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF054 60V 0.022Ω ID 45A* The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRF054 O-204AA/AE) paramete252-7105 IRF054

    IRFF9210

    Abstract: 097A
    Text: PD - 90382 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9210 200V, P-CHANNEL Product Summary Part Number IRFF9210 BVDSS -200V RDS(on) 3.0Ω ID -1.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF O-205AF) IRFF9210 -200V as252-7105 IRFF9210 097A

    Untitled

    Abstract: No abstract text available
    Text: PD - 93976 IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF O-204AA/AE) IRF9140 -100V

    Untitled

    Abstract: No abstract text available
    Text: PD - 90640 IRF054 60V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF054 60V 0.022Ω ID 45A* The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRF054 O-204AA/AE)

    Untitled

    Abstract: No abstract text available
    Text: PD - 90584 IRF044 60V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRF044 O-204AA/AE)

    Untitled

    Abstract: No abstract text available
    Text: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAG40 O-204AA/AE)

    IRF4401

    Abstract: IRF440
    Text: PD - 90372 IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF440 BVDSS 500V RDS(on) 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRF440 O-204AA/AE) parame252-7105 IRF4401 IRF440

    IRFAG40

    Abstract: No abstract text available
    Text: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAG40 O-204AA/AE) IRFAG40

    IRFAG50

    Abstract: No abstract text available
    Text: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRFAG50 O-204AA/AE) electrical252-7105 IRFAG50

    IRF140

    Abstract: irf140 ir IRF1401
    Text: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF IRF140 O-204AA/AE) param252-7105 IRF140 irf140 ir IRF1401