pfc8574
Abstract: ENC 03 LTC2272 marking code s4 diode op amp marking P3 JESD204 LTC2273
Text: LTC2273/LTC2272 16-Bit, 80Msps/65Msps Serial Output ADC DESCRIPTION FEATURES n High Speed Serial Interface JESD204 Sample Rate: 80Msps/65Msps 77.7dBFS Noise Floor 100dB SFDR SFDR >90dB at 140MHz (1.5VP-P Input Range) PGA Front End (2.25VP-P or 1.5VP-P Input Range)
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LTC2273/LTC2272
16-Bit,
80Msps/65Msps
JESD204)
100dB
140MHz
25VP-P
700MHz
1100mW/990mW
pfc8574
ENC 03
LTC2272
marking code s4 diode
op amp marking P3
JESD204
LTC2273
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TK 69 TSOP
Abstract: 1024KX16 M5M4V16169RT-10 1-OF-128 7WB1 AD011 M5M4V16169TP-10
Text: MITSUBISHI LSIs TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice.
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M5M4V16169RT-10
16MCDRAM
1024K-WORD
16-BIT)
1024-WORD
M5M4V16169TP
16M-bit
576-word
16-bit
TK 69 TSOP
1024KX16
1-OF-128
7WB1
AD011
M5M4V16169TP-10
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HSOP25
Abstract: BH9595 BH9595FP-Y
Text: BH9595FP-Y Multimedia ICs SCSI active terminator BH9595FP-Y These SCSI active terminators, developed as a substitute for conventional discrete terminators, maintain good consistency between VM level 2.85V and GND level (0V) and between VM level and VDD level, and have extremely
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BH9595FP-Y
HSOP25
HSOP25
BH9595
BH9595FP-Y
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bh9598
Abstract: BH9598AFP-Y HSOP25
Text: BH9598AFP-Y マルチメディア IC SCSI アクティブターミネータ BH9598AFP-Y この SCSI アクティブターミネータは従来のディスクリート型終端抵抗を置き換えUltra Fast SCSI に対応したもので す。VM Level 2.60V と GND Level に対して、良好な整合性を保持しており、消費電力は非常に小さく、待機時にお
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BH9598AFP-Y
990mW
614mW
1360mW
HSOP25
bh9598
BH9598AFP-Y
HSOP25
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470uF capacitor
Abstract: TS5215
Text: TS5215 300mA Low Noise LDO Voltage Regulator with Enable Low Power Consumption Low Drop Out Voltage 0.35V Fixed and Adjustable Output Enable Shutdown General Description The TS5215 series is an efficient linear voltage regulator with ultra low noise output, very low dropout voltage typically
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TS5215
300mA
TS5215
350mV
300mA)
125uA
100uA)
470uF capacitor
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27BSC
Abstract: TS5215 TS5215CX5
Text: TS5215 300mA Low Noise LDO Voltage Regulator with Enable SOT-25 Pin Definition: 1. Input 2. Ground 3. Enable 4. Bypass / Adjust 5. Output SOT-89-5L SOP-8 Pin Definition: 1. Bypass / Adjust 2. Ground 3. Enable 4. Input 5. Output Pin Definition: 1. Enable 2. Input
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TS5215
300mA
OT-25
OT-89-5L
TS5215
300mV
300mA)
125uA
100uA)
27BSC
TS5215CX5
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Untitled
Abstract: No abstract text available
Text: X98014 I GNS DE S W E T OR N DUC E D F TE P R O D N TI TU MME ECO E SUBS 01-140 Data Sheet R T NO SIBL ISL980 PO S December 19, 2005 140MHz Triple Video Digitizer with Digital PLL FN8217.1 Features • 140MSPS maximum conversion rate The X98014 3-channel, 8-bit Analog Front End (AFE)
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ISL980
X98014
FN8217
140MHz
X98014
140MSPS
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Untitled
Abstract: No abstract text available
Text: TS5215 300mA Low Noise LDO Voltage Regulator with Enable SOT-25 Pin Definition: 1. Input 2. Ground 3. Enable 4. Bypass / Adjust 5. Output SOT-89-5L SOP-8 Pin Definition: 1. Bypass / Adjust 2. Ground 3. Enable 4. Input 5. Output Pin Definition: 1. Enable 2. Input
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TS5215
300mA
OT-25
OT-89-5L
TS5215
300mV
300mA)
125uA
100uA)
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Untitled
Abstract: No abstract text available
Text: 1M x 8 SRAM MODULE SYS81000FKX - 55/70/85/10/12 Elm Road, West Chirton Industrial Estate, North Shields, NE29 8SE, ENGLAND. TEL +44 0191 2930500. FAX +44 (0191) 2590997 Issue 2.4 : February 1999 Description Features The SYS81000FKX is a plastic 8 Mbit Static RAM
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SYS81000FKX
565mW
990mW
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tc5118165bj
Abstract: TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400
Text: TOSHIBA TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO DYNAMIC RAM Description The TC5116405BSJ/BST is the Hyper Page Mode (EDO) dynamic RAM organized as 4,194,304 words by 4 bits. The TC5116405BSJ/BST utilizes Toshiba’s CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide
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TC5116405BSJ/BST-60
TC5116405BSJ/BST-70
TC5116405BSJ/BST
300mil)
cycles/64ms
TC51V16325BJ:
SOJ70-P-400A
tc5118165bj
TC5118165
TC5117405
SOJ42-P-400
TC5117405BSJ
hidden refresh
TSOP70-P-400
TC51181
TC5118
TOSHIBA TSOP50-P-400
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BE423
Abstract: No abstract text available
Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro
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TC5118325BJ/BFT-70
TC5118325BJ/BFT
TC5118325BJ/
400mil)
I/024
I/025
I/032
BE423
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TC5118165
Abstract: TC5118165BFT
Text: INTEGRATED TO SH IB A M O S D IG ITA L INTEG RATED CIRCUIT CIRCUIT T C 5 1 1 8 1 6 5 BJ / B F T - 60 T C 5 1 1 8 1 6 5 BJ / BFT - 70 TOSHIBA TECHNICAL TE N TA TIV E D A T A 1 ,0 4 8 ,5 7 6 W O R D x DATA SILICON GATE C M O S 16 BIT HYPER PAGE ED O D Y N A M IC R A M
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TC5118165BJ/BFT
TC511
SOJ42
TC5118165BJ-32
TC5118165
35MAX
TC5118165BFT
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IN4010
Abstract: No abstract text available
Text: LG Semicon. Co. LTD Description Features The GMM781000ENS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400EJ, 1M x4 sealed in 20 pin SOJ package. The GMM781000ENS is a socket type memory module, suitable for easy change or addition
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GMM781000ENS
GM71C4400EJ,
GMM781000ENS
GM71C4400EJ
781000ENS-60
781000ENS-70
781000ENS-80
IN4010
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M7810
Abstract: DNS-80 GM71C4
Text: LG Semicon. Co. LTD. Description Features The GMM781000DNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400DJ, 1M x4 sealed in 20 pin SOJ package. The GMM781000DNS is a socket type memory module, suitable for easy change or addition
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GMM781000DNS
GM71C4400DJ,
GMM781000DNS
GM71C4400DJ
GMM781000DNS-60
781000DNS-70
M781000DNS-80
M7810
DNS-80
GM71C4
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00-KX02
Abstract: No abstract text available
Text: GMM781000CNS-60/70/80 LG Semicon Co.,Ltd. Description 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Features The GMM781000CNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400CJ, 1M x4 sealed in 20 pin SOJ package. The
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GMM781000CNS
GM71C4400CJ,
GMM781000CNS
GMM781000CNS-60/70/80
GM71C44
GMM781000CNS-60
GMM78I000CNS-70
GMM781000CNS-80
00-KX02
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BH9598FP
Abstract: bh9598
Text: Communication ICs SCSI Active Terminator BH9595FP-Y/BH9596FP-Y These SCSI active terminators, developed as a substitute for conventional discrete terminators, maintain good con sistency between VM level 2.85V and GNO level (OV) and between VM level and V do level, and have extremely low
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BH9595FP-Y/BH9596FP-Y
BH9595
BH9598FP
bh9598
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tc5118165bj
Abstract: TC5118165B TC5118165 ct rac 70 TC5118165BFT
Text: TOSHIBA TC5118165BJ/BFT60/70 PRELIM INARY 1,048,576 W O RD X 16 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 words by 16 bits. The TC5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat
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TC5118165BJ/BFT60/70
TC5118165BJ/BFT
TC5118165BJ/
DR16160695
TC5118165B
J/BFT-60/70
B-119
tc5118165bj
TC5118165
ct rac 70
TC5118165BFT
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TC5118325B
Abstract: mx c511 tc5118325
Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 W ORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/ BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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TC5118325BJ/BFT-70
TC5118325BJ/BFT
TC5118325BJ/
400mil)
J/BFT-70
DR16220995
TC5118325B
mx c511
tc5118325
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM514265B/BSL 262,144-Word x 16-Bit DYNAMIC RAM : HYPER PAGE MODE TYPE D ESC R IP T IO N T h e M SM 5 1 4 2 6 5 B/BSL is a n e w generation D yn am ic R A M org an ized as 262,144-word x 16-bit configuration. T h e technology used to fabricate the M SM 5 1 4 2 6 5 B/BSL is O K I's C M O S silico n gate process
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MSM514265B/BSL
144-Word
16-Bit
MSM514265B/BSL
cycles/128ms
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ras 0515
Abstract: BNS-60
Text: LG Semicon. Co. LTD. Description Features The GMM781000BNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package. The GMM781000BNS is a socket type memory module, suitable for easy change or addition
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GMM781000BNS
GM71C4400BJ,
GMM781000BNS
GM71C4400B
GMM781000BNS-60
GMM781000BNS-70
GMM781000BNS-80
0DD74Q5
ras 0515
BNS-60
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idt7m864
Abstract: idt6116s IDT6116 7MA64 7m864
Text: 64K 8K X 8 C M O S STATIC RAM PAK A ID T 7 M 8 6 4 ID T 8 M 8 6 4 FEATURES: • Equivalent to JEOEC standard 8K x 8 monolithic RAM • 8,192 x 8 CMOS static RAM module complete w ith decoder and decoupling capacitor • High-speed 65 (commercial only) 75/85/120/150/200ns
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75/85/120/150/200ns
IDT6116s
IDT7M864/IDT8M864
idt7m864
IDT6116
7MA64
7m864
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MB85303
Abstract: No abstract text available
Text: February 1993 Edition 1.0 FUJITSU DATA SHEET MB85303A-60/-70/-80 CMOS 1M x 8 Fast Page Mode DRAM Module CMOS 1,048,576 x 8 Bit Fast Page Mode DRAM Module The Fujitsu MB85303A is a fully decoded CMOS Dynamic Random Access Memory DRAM Module consisting of two MB814400A devices.
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MB85303A-60/-70/-80
MB85303A
MB814400A
576-word
30-pad
MSS-30P-P08
MB85303
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CA3098E
Abstract: No abstract text available
Text: JAN 1 fl 1993 a* HARRIS CA3098 \J \J \J S E M I C O N D U C T O R January Programmable Schmitt Trigger - with Memory Dual Input Precision Level Detectors 1993 Features • Description Programmable Operating Current The CA3098 Programmable Schmitt Trigger is a monolithic
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CA3098
CA3098
150mA
1-800-4-HARRIS
CA3098E
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 4 V 1 6 1 6 9 T P - 1 0 ,- 1 2 ,- 1 5 16M CDRAM16M 1024K-WORD BY 16-BIT CACHED DRAM WITH 16K(1024-WORD BY 16-BIT)SRAM DESCRIPTION The M5M4V16169TP is a 16M-bit Cached DRAM which integrates input registers, a 1048576-word by 1 6 - bit
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CDRAM16M
1024K-WORD
16-BIT
1024-WORD
M5M4V16169TP
16M-bit
1048576-word
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