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    H9ccnnn

    Abstract: H9CKNNNB H5MS1G22AFRE3M H5MS2G22MFR-J3M H5MS2G62 H55S2622JFR-60M H9TKNNN2GDMP-LRNDM DDR333 H5MS2G62AFR-J3M H5MS1G22AFR-E3M
    Text: Page 1 DENSI TY ORG. SPEED PART NUMBER Package FEATURE Availability 2Gb 64M x 16 166MHz H55S2G62MFP-60M FBGA 54ball 4Bank, 1.8V/ 1.8V Now 133MHz H55S2G62MFP-75M FBGA(54ball) 4Bank, 1.8V/ 1.8V Now 166MHz H55S2G22MFP-60M FBGA(90ball) 4Bank, 1.8V/ 1.8V Now 133MHz


    Original     		PDF 166MHz H55S2G62MFP-60M 54ball) 133MHz H55S2G62MFP-75M H55S2G22MFP-60M 90ball) H9ccnnn H9CKNNNB H5MS1G22AFRE3M H5MS2G22MFR-J3M H5MS2G62 H55S2622JFR-60M H9TKNNN2GDMP-LRNDM DDR333 H5MS2G62AFR-J3M H5MS1G22AFR-E3M

    K4S643232E

    Abstract: K4S643233E
    Text: K4S643233E-SE N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.0V & 3.3V) Extended Temperature TSOP / 90Ball FBGA (V DD/V DDQ 3.0V/3.0V, 3.3V/3.3V) Revision 1.4 November 2001 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4S643233E-SE 32bit 90Ball 2Mx32 K4S643234E-S K4S643232E-S K4S643233E-S K4S643232E K4S643233E

    45VM32160D

    Abstract: No abstract text available
    Text: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		PDF IS42/45VM32160D 32Bits IS42/45VM32160D -40oC 16Mx32 IS42VM32160D-6BLI IS42VM32160D-75BLI 90-ball 45VM32160D

    SM81600E

    Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb SM81600E IS42SM16800E-7TLI IS42SM32400E-7T IS42SM16800E-7BLI

    IS42S32400D

    Abstract: 42S32400D is42s32400d-6bli IS42S32400D-7TLI
    Text: IS42S32400D 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge MARCH 2009 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S32400D 128-MBIT 128Mb rS32400D-7TI 86-Pin IS42S32400D-7TLI IS42S32400D-7BI IS42S32400D 42S32400D is42s32400d-6bli IS42S32400D-7TLI

    K4S643233H

    Abstract: K4S643233H-F
    Text: K4S643233H - F H E/N/G/C/L/F Mobile-SDRAM 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,


    Original     		PDF K4S643233H 32Bit 90FBGA K4S643233H-F

    K4S28323LF

    Abstract: K4S28323LF-F
    Text: K4S28323LF - F H E/N/S/C/L/R Mobile-SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,


    Original     		PDF K4S28323LF 32Bit 90FBGA K4S28323LF-F

    MT48LC4M32B2P

    Abstract: MT48LC4M32B2TG-7 MT48LC4M32B2 128MbSDRAMx32
    Text: 128Mb: x32 SDRAM Features Synchronous DRAM MT48LC4M32B2 – 1 Meg x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdram Features Figure 1: • PC100 functionality • Fully synchronous; all signals registered on positive


    Original     		PDF 128Mb: MT48LC4M32B2 PC100 096-cycle 09005aef80872800/Source: 09005aef80863355 128MbSDRAMx32 MT48LC4M32B2P MT48LC4M32B2TG-7 MT48LC4M32B2

    MT48LC2M32B2P

    Abstract: MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612
    Text: 64Mb: x32 SDRAM Features Synchronous DRAM MT48LC2M32B2 – 512K x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Table 1: • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock


    Original     		PDF MT48LC2M32B2 PC100 096-cycle 09005aef811ce1fe/Source: 09005aef811ce1d5 64MSDRAMx32 MT48LC2M32B2P MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612

    IS61WV51232BLL-10BLI

    Abstract: IS61WV51232BLL IS64WV51232BLL IS61WV51232 IS64WV51232BLL-10BA3
    Text: IS61WV51232ALL/ALS IS61WV51232BLL/BLS IS64WV51232BLL/BLS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater


    Original     		PDF IS61WV51232ALL/ALS IS61WV51232BLL/BLS IS64WV51232BLL/BLS IS61WV51232Axx) IS61/64WV51232Bxx) 90-ball IS61WV51232BLL-10BI IS61WV51232BLL-10BLI IS61WV51232BLL-10BLI IS61WV51232BLL IS64WV51232BLL IS61WV51232 IS64WV51232BLL-10BA3

    ba1s

    Abstract: No abstract text available
    Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data


    Original     		PDF IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    MT48LC8M32LFB5

    Abstract: D9CDF MT48H8M32LFB5-75 IT mt48h8m32lff5-8 MT48H8M32LFB5-75 MT48H8M32LF MT48V8M32LFB5-10 MT48LC8M32LFB5-8 stop mt48h8m32lfb5 rev g
    Text: 256Mb: x32 Mobile SDRAM Features Mobile SDRAM MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features • • • • • • • • • • • •


    Original     		PDF 256Mb: MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF 90-ball 09005aef80d460f2/Source: 09005aef80cd8d41 256Mb MT48LC8M32LFB5 D9CDF MT48H8M32LFB5-75 IT mt48h8m32lff5-8 MT48H8M32LFB5-75 MT48V8M32LFB5-10 MT48LC8M32LFB5-8 stop mt48h8m32lfb5 rev g

    Untitled

    Abstract: No abstract text available
    Text: FMD4A32LCx–30Ex 128M 4Mx32 Low Power DDR SDRAM Revision 0.2 Jan. 2009 Rev. 0.2, Jan. ‘09 1 FMD4A32LCx–30Ex Document Title 128M(4Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Jul. 2nd , 2008 Preliminary 0.0 Initial Draft


    Original     		PDF FMD4A32LCxâ 4Mx32)

    SM32200K

    Abstract: IS42SM32200K
    Text: IS42SM/RM/VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		PDF IS42SM/RM/VM32200K 32Bits IS42SM/RM/VM32200K 200K-6BLI IS42SM32200K-75BLI 90-ball -40oC 2Mx32 IS42RM32200K-6BLI SM32200K IS42SM32200K

    IS42S32400

    Abstract: 42S32400
    Text: IS42S32400 4M x 32 128Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION MARCH 2010 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S32400 128Mb 86-pin 90-ball-Pin 90-Ball MO-207 IS42S32400 42S32400

    IS42VM81600E

    Abstract: IS42VM16800E IS42VM32400E-75TL IS42VM16800E-75BLI
    Text: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES JUNE 2011 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42VM81600E IS42VM16800E IS42VM32400E IS45VM81600E IS45VM16800E IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb IS42VM32400E-75TL IS42VM16800E-75BLI

    micron lpddr

    Abstract: 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged
    Text: 128Mb: x16, x32 Mobile LPDDR SDRAM AT Addendum Features Mobile LPDDR SDRAM AT Addendum MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS


    Original     		PDF 128Mb: MT46H8M16LF MT46H4M32LF 09005aef835b8f7c 09005aef835b8e70 micron lpddr 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged

    K4M283233H

    Abstract: No abstract text available
    Text: K4M283233H - F H N/G/L/F Mobile SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4M283233H is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,


    Original     		PDF K4M283233H 32Bit 90FBGA

    EM48AM3284LBA

    Abstract: EM48AM3284LBA-75F EM48AM3284LBA-75FE
    Text: eorex EM48AM3284LBA 512Mb 4Mx4Bank×32 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 1.8V +/- 0.1V Power Supply • LVCMOS Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8


    Original     		PDF EM48AM3284LBA 512Mb EM48AM3284LBA EM48AM3284LBA-75F EM48AM3284LBA-75FE

    K4S283234F-M

    Abstract: No abstract text available
    Text: K4S283234F-M CMOS SDRAM 4Mx32 SDRAM 90FBGA VDD 2.5V, VDDQ 2.5V Revision 0.1 November 2001 Rev. 0.1 Jan. 2002 K4S283234F-M CMOS SDRAM Revision History Revision 0.0 (Nov. 16. 2001, Final) • Final generation for 4Mx32 2.5V SDRAM FBGA. Revision 0.1 (Jan. 14. 2002, Final)


    Original     		PDF K4S283234F-M 4Mx32 90FBGA 32Bit K4S283234F-M

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52S128324A Revision History Revision 1.0 May. 30 2006 -Original Revision 1.1(Jun. 20 2006) -Modify tRC and tRFC spec Revision 1.2(Mar. 02 2007) - Delete BGA ball name of packing dimensions Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007


    Original     		PDF M52S128324A

    w989d2kb

    Abstract: smd 6ac
    Text: W989D6KB / W989D2KB 512Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential


    Original     		PDF W989D6KB W989D2KB 512Mb 304-words 166MHz. A01-002 w989d2kb smd 6ac

    A1833

    Abstract: No abstract text available
    Text: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4


    Original     		PDF MT46H128M16LF MT46H256M16L2 MT46H64M32LF MT46H128M32L2 MT46H256M32L4 09005aef83a73286 A1833