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    8GH TRANSISTOR Search Results

    8GH TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    8GH TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FPD200P70

    Abstract: TL11 TL22 l420 FPD200P70SR
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


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    PDF FPD200P70 FPD200P70 25mmx200mm 20dBm 26GHz 15GHz FPD200P70-AJ TL11 TL22 l420 FPD200P70SR

    FPD200P70

    Abstract: No abstract text available
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


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    PDF FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ

    fpd200p70

    Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


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    PDF FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor

    2,5GHz oscillator

    Abstract: 3A-34 8GHz oscillator
    Text: SIEM EN S LNA/Mixer PMB 2332 Bipolar IC Target Spezification Functional Description, Benefits: • New B6HF bipolar technology, 25GHz ft • Frequency range up to 3.0GHz • Small outline T-SSOP 16 package • 2.7-4.5V voltage supply • -40°C to +85°C operational temperature range


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    PDF 25GHz T-SSOP-16 235L05 T-SSOP-16 fl23ShDS 07fi2fcJcà 2,5GHz oscillator 3A-34 8GHz oscillator

    PIC16 example hi tech lcd ay0438

    Abstract: PIC16 code hi tech SPI marking 3FW rg4bh plcc socket 44 PLCC tht PIR CONTROLLER LP 0001 BO 570 3FW 59 Zener diode marking hsK PIC16 example hi tech lcd
    Text: P IC 1 6 C 9 X X M ic r o c h ip $ 8-Bit CMOS Microcontroller with LCD Driver Available in Die form Devices included in this data sheet: • PIC16C923 PIC16C924 Microcontroller Core Features: • High performance RISC CPU • Only 35 single word instructions to learn


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    PDF PIC16C923 PIC16C924 PIC16C924) 04/PT PIC16C923 081/CL PIC16C9XX-04) PIC16C9XX PIC16C9XXT PIC16LC9XX PIC16 example hi tech lcd ay0438 PIC16 code hi tech SPI marking 3FW rg4bh plcc socket 44 PLCC tht PIR CONTROLLER LP 0001 BO 570 3FW 59 Zener diode marking hsK PIC16 example hi tech lcd