12a h3 fuse
Abstract: 12a h3 sc sf SFH-1412 12ah4 7A SF SFH-1412A SFH-1212A 12a g1 battery fuse SFH-1212 5A SF
Text: Est. 1997/12/10 Rev.20 2002/11/27 SC Protector Self Control Protector Innovative way of safety control for Li-ion rechargeable battery At any moment, SC Protector system monitors the voltage of Li-ion rechargeable battery and its heater fuses the fuse at the same instant when the system detects the overcharge. Usual protection element
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7A SF SC 30
Abstract: ESX10-103 uP 6308 AD ESX10 SB-S11-P1-01-1-1A ESX10-127 ESX10-104 17PLUS-Q02-00 17PLUS-QA0-LR 5A SF SC 30
Text: Electronic Circuit Protector ESX10 Description Electronic circuit protector type ESX10 is designed to ensure selective disconnection of DC 24 V load systems. DC 24 V power supplies, which are widely used in industry today, will shut down the output in the event of an overload with the result that
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ESX10
ESX10
7A SF SC 30
ESX10-103
uP 6308 AD
SB-S11-P1-01-1-1A
ESX10-127
ESX10-104
17PLUS-Q02-00
17PLUS-QA0-LR
5A SF SC 30
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ESX10-TA-100
Abstract: dc switch 24vdc mosfet ESX10-TB-124 ESX10-T High Voltage Bus-bars ESX10-TB-102 Bus-bars
Text: Datasheet Electronic Circuit Protection ESX10-T selected in fixed values from 0.5 A.12 A. Failure and status indication are provided by a multicolour LED and an integral short-circuit-proof status output or a relay signal contact. Remote operation is possible by
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ESX10-T
LIT0806
ESX10-TA-100
dc switch 24vdc mosfet
ESX10-TB-124
ESX10-T
High Voltage Bus-bars
ESX10-TB-102
Bus-bars
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AD-TX-EM01
Abstract: ESX10-TB-127 UL2367 E306740 ESX10-TA-100 ov 2094 67200 E322549
Text: Datasheet Electronic Circuit Protection ESX10-T selected in fixed values from 0.5 A.12 A. Failure and status indication are provided by a multicolour LED and an integral short-circuit-proof status output or a relay signal contact. Remote operation is possible by
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ESX10-T
ESX10-T.
AD-TX-EM01
AD-TXEM01
4/12-LIT0806E
AD-TX-EM01
ESX10-TB-127
UL2367
E306740
ESX10-TA-100
ov 2094
67200
E322549
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AD-TX-EM01
Abstract: ESX10-TD 4616L-160PK esx10-td-101 X22200503 X22261102 ESX10-TA-100-DC24V-0 Sumitomo E4008 phoenix contacts 30 03 34 7 UL2367
Text: Electronic Circuit Protector ESX10-T.-DC 24 V Description Electronic circuit protector type ESX10-T is designed to ensure selective disconnection of DC 24 V load systems. DC 24 V power supplies, which are widely used in industry today, will shut down the output in the event of an overload with the result that
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ESX10-T
ESX10-T
ESX10-T.
AD-TX-EM01
AD-TXEM01
AD-TX-EM01
ESX10-TD
4616L-160PK
esx10-td-101
X22200503
X22261102
ESX10-TA-100-DC24V-0
Sumitomo E4008
phoenix contacts 30 03 34 7
UL2367
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CIRCUIT BREAKER AEG me 800
Abstract: catalog for 3RT series contactor* siemens Weidmuller upac Telemecanique catalog 9101900000 Siemens 4-20mA Loop Isolator catalog for 3RT Power contactor* siemens upac MCB 10 AMP 87426
Text: CATALOGUE 10 2006/2007 Short Form Catalogue Quick Reference Guide Company profile Weidmüller is the leading manufacturer of components for electrical and electronic interconnection technologies. The company develops, produces and sells customer-oriented solutions comprising the entire Weidmüller product portfolio.
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MICRON 256K X MT 43C4257A/8A 4 TRIPLE-PORT DRAM FEATURES • • • • • • • • • • • PIN ASSIGNMENT Top View 40-Pin SOJ (SDB-3) SCb 1 40 Vss 39 SDOb4 3 38 SD Qb3 4 37 SËb 5 36 MKD 6 35 SD Qa4 SD Q a2 C 7 34 SD Qa3 8 33 SËa 9
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43C4257A/8A
40-Pin
MT43C4257A/8A
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SF126
Abstract: transistor SD335 SD349 SSY20 SF829 SD 338 SF826 mikroelektronik Berlin SD339 SD338
Text: Der Kollektor ist mit der metallischen Montageflache leitend verbunden Uw e Beier Transistoren aus dem Kombinat Mikroelektronik electrónica • Band 245 UWE BEIER Transistoren aus dem Kombinat M ikroelektronik M ILITARVERLAG DER DEUTSCHEN DEM OKRATISCHEN
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Untitled
Abstract: No abstract text available
Text: T O S H IB A D IG IT A L IN T E G R A T E D CIRCUIT INTEGRATED CIRCUIT TO SHIBA T C 5 2 8 1 2 8 \ P / A J- 1 0 , TC528128AP / A J -12 TECHNICAL DATA SILIC O N G A T E C M O S P R E L IM IN A R Y 131,072W ORDSx88ITS M U LT IPO R T D RA M DESCRIPTION The TC528128AP/ A J is a CMOS multiport memory equipped with a 131,072-words by 8-bits
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TC528128AP
ORDSx88ITS
TC528128AP/
072-words
256-words
TC528128AP/AJ
TC528128AP
DIP40
TC523123A?
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SRT9
Abstract: osam marking code 4258A MT43C MT43C425
Text: PRELIMINARY l^ iic n o N 256K X MT43C 4257A/8A 4 T R IP LE -P O R T DRAM FEATURES • • • • • • • • • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data-access ports Fast access times: 70ns random, 22ns serial Operation and control compatible w ith 1 Meg VRAM
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MT43C
257A/8A
512-cycle
048-bit
T43C4257A/8A
MT43C4257A/8A
SRT9
osam marking code
4258A
MT43C425
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mt43c4257adj7
Abstract: sama logic MT43C4257ADJ-7 MT43C4257A 4257A t994
Text: M T43C 4257A/8A 256KX4 TRIPLE-PORTDRAM MICRON I TRIPLE-PORT DRAM 256K X 4 DRAM WITH DUAL 512x4 SAMS FEATURES • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data-access ports Fast access times: 70ns random, 22ns serial Operation and control compatible with 1 M eg VRAM
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350mW
512-cycle
048-bit
512x4
mt43c4257adj7
sama logic
MT43C4257ADJ-7
MT43C4257A
4257A
t994
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IC 7447
Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Text: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222
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FOR5J
Abstract: GTO thyristor 100A, 400V TO-220AH TSZ25G 5F13 TSS1G41 s6565g GTO thyristor 5A, 400V MSG100L41 TSS2G41S
Text: [ Thyristors P h a s e Control T h yristo rs : * i'eak off state v<>!t,tK<‘ and tewrse voilage Average "n-state current 50V 0. IA 0.3A 0.5A IA 2A S F 0 K ÎA 4 2 3A 100V SF0 R 1 H 4 2 SF0 R 3 H 4 2 SFOH5H43 SM H12 S F2 B 4 1 SF3 H 1 4 SF3H41 SF3 H 4 2 SF5 H 1 3
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SFOH5H43
SF3H41
SF5H41
1000A
I500A
SF1500C
SF1500J27
SF500H27
SF600H27
SF500D27
FOR5J
GTO thyristor 100A, 400V
TO-220AH
TSZ25G
5F13
TSS1G41
s6565g
GTO thyristor 5A, 400V
MSG100L41
TSS2G41S
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DIS CR ET E/ OPT O} I 9097 25 0 TOSHIBA ¿/oihihi TD DISCRETE/OPTO DE | Ì G ^ S S O GGlb37b 1 90D 16376 D 2 S K 5 6 8 " T- SEMICONDUCTOR M G 8 G A G H 1 TECHNICAL DATA M G 8 G 6 E M 1 7 po -o w lli ò o Irl Irl ]►¡1 X O O 00 o as Irl Irl 1 1
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GGlb37b
2SI568
DT-39-/3
T0T75SD
2SK568
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2542 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV] 2SK2542 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS 10.3MAX. g3.6 ±0.2 4V Gate Drive Low Drain-Sorce ON Resistance : RDS(ON = 0-75ß (Typ.)
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2SK2542
20kfi)
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MT43C4257ADJ-7
Abstract: No abstract text available
Text: b l l l S M T OOIOOL j? 3Tfi • URN IU |C Z R O N I MT43C4257A/8 A 256K x 4 TRIPLE-PORT DRAM SEW iCOhD'JCTOa INC. TRIPLE-PORT DRAM 256K x 4 DRAM WITH DUAL 51 2 x 4 SAMS FEATURES • • • • • • • • Three asynchronous, independent, data-access ports
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MT43C4257A/8
500mW
512-cycle
MT43C4257A/8A
MT43C42S7A/
MT43C4257ADJ-7
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TC524258AZ
Abstract: No abstract text available
Text: TOSHIBA DIGITAL INTEGRATED CIRCUIT INTEGRATED CIRCUIT TC524258AJ/AZ-10 . TC524258AJ/ A Z-12 TO SHIBA TECHNICAL DATA SILICON GATE CMOS PRELIMINARY 262, 144W 0R D S X48ITS MULTIPORT DRAM DESCRIPTION The TC524253AJ/AZ is a CM OS multiport memory equipped with a 262,144-words by 4-bits
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TC524258AJ/AZ-10
TC524258AJ/
X48ITS
TC524253AJ/AZ
144-words
512-words
TC524253AJ7
bein51
TC524253AJ
TC524258AJ
TC524258AZ
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EQUIVALENT TRANSISTOR bc109c
Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor
Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF
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2N327A
2N327B
2N328A
2N328B
2N329A
2N329B
2N760
2N760A
BT2946
2N2946
EQUIVALENT TRANSISTOR bc109c
TRANSISTOR pnp BC140
TRANSISTOR BC140
BC140 equivalent
TRANSISTOR BC141
2N1026
EQUIVALENT TRANSISTOR bc108
bcy59 equivalent
bcy31
BC177 pnp transistor
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QML-38535
Abstract: SMJ55166-75HKCM sq10 amplifier SMJ55166-70HKCM ASD910 5962-9564303QXA 5962-9564301QYC smd marking BH rum
Text: REVISIONS LTR DESCRIPTION DATE APPROVED YR-MO-DA Changes in accordance with NOR 5962-R098-96. 96-04-09 M. A. Frye Changes in accordance with NOR 5962-R127-97. 96-11-19 M. A. Frye Add device type 03. Update boilerplate. Editorial changes throughout. 97-03-26
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5962-R098-96.
5962-R127-97.
QML-38535
SMJ55166-75HKCM
sq10 amplifier
SMJ55166-70HKCM
ASD910
5962-9564303QXA
5962-9564301QYC
smd marking BH rum
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VQB71
Abstract: vqb 71 Halbleiterbauelemente DDR "halbleiterwerk frankfurt" U105D diode sy-250 U107D u311d hfo frankfurt sy 170
Text: eiecrronic Halbleiter-Bauelemente D ie v o r lie g e n d e Ü b e rs ic h t e n t h ä l t i n g e d rä n g te r Form d ie w ic h tig s te n G renz- und K enndaten d e r i n d e r DDR g e f e r t i g t e n H a lb le ite r b a u e le m e n te . D ie K ennw erte werden im a llg e m e in e n f ü r e in e U m gebungstem peratur von
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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equivalent transistor 2N1711
Abstract: MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708 2N706A
Text: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns
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2N706
2N706A
2N706B
2N706C
2N708
2N743
2N743A
2N744
BT2946
2N2946
equivalent transistor 2N1711
MOTOROLA 2n2102 TRANSISTOR
DH3725
transistor bfy39
SP3725
NPN transistor 2n2222A plastic package
2N2708
2N784A
Motorola* 2n708
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equivalent transistor 2N1711
Abstract: 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package 2N328A transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR
Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF
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2N327A
2N327B
2N328A
2N328B
2N329A
2N329B
2N760
2N760A
BT2946
2N2946
equivalent transistor 2N1711
2N2484 equivalent transistors
transistor 2n1711
NPN transistor 2n2222A plastic package
transistor 2N929
2N1025
BT2222A
DH3725CN
MOTOROLA 2n2102 TRANSISTOR
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mikroelektronik ddr
Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d
Text: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden
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