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    8A SF SC 31 Search Results

    8A SF SC 31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    12a h3 fuse

    Abstract: 12a h3 sc sf SFH-1412 12ah4 7A SF SFH-1412A SFH-1212A 12a g1 battery fuse SFH-1212 5A SF
    Text: Est. 1997/12/10 Rev.20 2002/11/27 SC Protector Self Control Protector Innovative way of safety control for Li-ion rechargeable battery At any moment, SC Protector system monitors the voltage of Li-ion rechargeable battery and its heater fuses the fuse at the same instant when the system detects the overcharge. Usual protection element


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    7A SF SC 30

    Abstract: ESX10-103 uP 6308 AD ESX10 SB-S11-P1-01-1-1A ESX10-127 ESX10-104 17PLUS-Q02-00 17PLUS-QA0-LR 5A SF SC 30
    Text: Electronic Circuit Protector ESX10 Description Electronic circuit protector type ESX10 is designed to ensure selective disconnection of DC 24 V load systems. DC 24 V power supplies, which are widely used in industry today, will shut down the output in the event of an overload with the result that


    Original     		PDF ESX10 ESX10 7A SF SC 30 ESX10-103 uP 6308 AD SB-S11-P1-01-1-1A ESX10-127 ESX10-104 17PLUS-Q02-00 17PLUS-QA0-LR 5A SF SC 30

    ESX10-TA-100

    Abstract: dc switch 24vdc mosfet ESX10-TB-124 ESX10-T High Voltage Bus-bars ESX10-TB-102 Bus-bars
    Text: Datasheet Electronic Circuit Protection ESX10-T selected in fixed values from 0.5 A.12 A. Failure and status indication are provided by a multicolour LED and an integral short-circuit-proof status output or a relay signal contact. Remote operation is possible by


    Original     		PDF ESX10-T LIT0806 ESX10-TA-100 dc switch 24vdc mosfet ESX10-TB-124 ESX10-T High Voltage Bus-bars ESX10-TB-102 Bus-bars

    AD-TX-EM01

    Abstract: ESX10-TB-127 UL2367 E306740 ESX10-TA-100 ov 2094 67200 E322549
    Text: Datasheet Electronic Circuit Protection ESX10-T selected in fixed values from 0.5 A.12 A. Failure and status indication are provided by a multicolour LED and an integral short-circuit-proof status output or a relay signal contact. Remote operation is possible by


    Original     		PDF ESX10-T ESX10-T. AD-TX-EM01 AD-TXEM01 4/12-LIT0806E AD-TX-EM01 ESX10-TB-127 UL2367 E306740 ESX10-TA-100 ov 2094 67200 E322549

    AD-TX-EM01

    Abstract: ESX10-TD 4616L-160PK esx10-td-101 X22200503 X22261102 ESX10-TA-100-DC24V-0 Sumitomo E4008 phoenix contacts 30 03 34 7 UL2367
    Text: Electronic Circuit Protector ESX10-T.-DC 24 V Description Electronic circuit protector type ESX10-T is designed to ensure selective disconnection of DC 24 V load systems. DC 24 V power supplies, which are widely used in industry today, will shut down the output in the event of an overload with the result that


    Original     		PDF ESX10-T ESX10-T ESX10-T. AD-TX-EM01 AD-TXEM01 AD-TX-EM01 ESX10-TD 4616L-160PK esx10-td-101 X22200503 X22261102 ESX10-TA-100-DC24V-0 Sumitomo E4008 phoenix contacts 30 03 34 7 UL2367

    CIRCUIT BREAKER AEG me 800

    Abstract: catalog for 3RT series contactor* siemens Weidmuller upac Telemecanique catalog 9101900000 Siemens 4-20mA Loop Isolator catalog for 3RT Power contactor* siemens upac MCB 10 AMP 87426
    Text: CATALOGUE 10 2006/2007 Short Form Catalogue Quick Reference Guide Company profile Weidmüller is the leading manufacturer of components for electrical and electronic interconnection technologies. The company develops, produces and sells customer-oriented solutions comprising the entire Weidmüller product portfolio.


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    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MICRON 256K X MT 43C4257A/8A 4 TRIPLE-PORT DRAM FEATURES • • • • • • • • • • • PIN ASSIGNMENT Top View 40-Pin SOJ (SDB-3) SCb 1 40 Vss 39 SDOb4 3 38 SD Qb3 4 37 SËb 5 36 MKD 6 35 SD Qa4 SD Q a2 C 7 34 SD Qa3 8 33 SËa 9


    OCR Scan     		PDF 43C4257A/8A 40-Pin MT43C4257A/8A

    SF126

    Abstract: transistor SD335 SD349 SSY20 SF829 SD 338 SF826 mikroelektronik Berlin SD339 SD338
    Text: Der Kollektor ist mit der metallischen Montageflache leitend verbunden Uw e Beier Transistoren aus dem Kombinat Mikroelektronik electrónica • Band 245 UWE BEIER Transistoren aus dem Kombinat M ikroelektronik M ILITARVERLAG DER DEUTSCHEN DEM OKRATISCHEN


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    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A D IG IT A L IN T E G R A T E D CIRCUIT INTEGRATED CIRCUIT TO SHIBA T C 5 2 8 1 2 8 \ P / A J- 1 0 , TC528128AP / A J -12 TECHNICAL DATA SILIC O N G A T E C M O S P R E L IM IN A R Y 131,072W ORDSx88ITS M U LT IPO R T D RA M DESCRIPTION The TC528128AP/ A J is a CMOS multiport memory equipped with a 131,072-words by 8-bits


    OCR Scan     		PDF TC528128AP ORDSx88ITS TC528128AP/ 072-words 256-words TC528128AP/AJ TC528128AP DIP40 TC523123A?

    SRT9

    Abstract: osam marking code 4258A MT43C MT43C425
    Text: PRELIMINARY l^ iic n o N 256K X MT43C 4257A/8A 4 T R IP LE -P O R T DRAM FEATURES • • • • • • • • • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data-access ports Fast access times: 70ns random, 22ns serial Operation and control compatible w ith 1 Meg VRAM


    OCR Scan     		PDF MT43C 257A/8A 512-cycle 048-bit T43C4257A/8A MT43C4257A/8A SRT9 osam marking code 4258A MT43C425

    mt43c4257adj7

    Abstract: sama logic MT43C4257ADJ-7 MT43C4257A 4257A t994
    Text: M T43C 4257A/8A 256KX4 TRIPLE-PORTDRAM MICRON I TRIPLE-PORT DRAM 256K X 4 DRAM WITH DUAL 512x4 SAMS FEATURES • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data-access ports Fast access times: 70ns random, 22ns serial Operation and control compatible with 1 M eg VRAM


    OCR Scan     		PDF 350mW 512-cycle 048-bit 512x4 mt43c4257adj7 sama logic MT43C4257ADJ-7 MT43C4257A 4257A t994

    IC 7447

    Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
    Text: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222


    OCR Scan     		PDF

    FOR5J

    Abstract: GTO thyristor 100A, 400V TO-220AH TSZ25G 5F13 TSS1G41 s6565g GTO thyristor 5A, 400V MSG100L41 TSS2G41S
    Text: [ Thyristors P h a s e Control T h yristo rs : * i'eak off state v<>!t,tK<‘ and tewrse voilage Average "n-state current 50V 0. IA 0.3A 0.5A IA 2A S F 0 K ÎA 4 2 3A 100V SF0 R 1 H 4 2 SF0 R 3 H 4 2 SFOH5H43 SM H12 S F2 B 4 1 SF3 H 1 4 SF3H41 SF3 H 4 2 SF5 H 1 3


    OCR Scan     		PDF SFOH5H43 SF3H41 SF5H41 1000A I500A SF1500C SF1500J27 SF500H27 SF600H27 SF500D27 FOR5J GTO thyristor 100A, 400V TO-220AH TSZ25G 5F13 TSS1G41 s6565g GTO thyristor 5A, 400V MSG100L41 TSS2G41S

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DIS CR ET E/ OPT O} I 9097 25 0 TOSHIBA ¿/oihihi TD DISCRETE/OPTO DE | Ì G ^ S S O GGlb37b 1 90D 16376 D 2 S K 5 6 8 " T- SEMICONDUCTOR M G 8 G A G H 1 TECHNICAL DATA M G 8 G 6 E M 1 7 po­ -o w lli ò o Irl Irl ]►¡1 X O O 00 o as Irl Irl 1 1


    OCR Scan     		PDF GGlb37b 2SI568 DT-39-/3 T0T75SD 2SK568

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2542 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV] 2SK2542 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS 10.3MAX. g3.6 ±0.2 4V Gate Drive Low Drain-Sorce ON Resistance : RDS(ON = 0-75ß (Typ.)


    OCR Scan     		PDF 2SK2542 20kfi)

    MT43C4257ADJ-7

    Abstract: No abstract text available
    Text: b l l l S M T OOIOOL j? 3Tfi • URN IU |C Z R O N I MT43C4257A/8 A 256K x 4 TRIPLE-PORT DRAM SEW iCOhD'JCTOa INC. TRIPLE-PORT DRAM 256K x 4 DRAM WITH DUAL 51 2 x 4 SAMS FEATURES • • • • • • • • Three asynchronous, independent, data-access ports


    OCR Scan     		PDF MT43C4257A/8 500mW 512-cycle MT43C4257A/8A MT43C42S7A/ MT43C4257ADJ-7

    TC524258AZ

    Abstract: No abstract text available
    Text: TOSHIBA DIGITAL INTEGRATED CIRCUIT INTEGRATED CIRCUIT TC524258AJ/AZ-10 . TC524258AJ/ A Z-12 TO SHIBA TECHNICAL DATA SILICON GATE CMOS PRELIMINARY 262, 144W 0R D S X48ITS MULTIPORT DRAM DESCRIPTION The TC524253AJ/AZ is a CM OS multiport memory equipped with a 262,144-words by 4-bits


    OCR Scan     		PDF TC524258AJ/AZ-10 TC524258AJ/ X48ITS TC524253AJ/AZ 144-words 512-words TC524253AJ7 bein51 TC524253AJ TC524258AJ TC524258AZ

    EQUIVALENT TRANSISTOR bc109c

    Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


    OCR Scan     		PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 EQUIVALENT TRANSISTOR bc109c TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor

    QML-38535

    Abstract: SMJ55166-75HKCM sq10 amplifier SMJ55166-70HKCM ASD910 5962-9564303QXA 5962-9564301QYC smd marking BH rum
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED YR-MO-DA Changes in accordance with NOR 5962-R098-96. 96-04-09 M. A. Frye Changes in accordance with NOR 5962-R127-97. 96-11-19 M. A. Frye Add device type 03. Update boilerplate. Editorial changes throughout. 97-03-26


    OCR Scan     		PDF 5962-R098-96. 5962-R127-97. QML-38535 SMJ55166-75HKCM sq10 amplifier SMJ55166-70HKCM ASD910 5962-9564303QXA 5962-9564301QYC smd marking BH rum

    VQB71

    Abstract: vqb 71 Halbleiterbauelemente DDR "halbleiterwerk frankfurt" U105D diode sy-250 U107D u311d hfo frankfurt sy 170
    Text: eiecrronic Halbleiter-Bauelemente D ie v o r lie g e n d e Ü b e rs ic h t e n t h ä l t i n g e d rä n g te r Form d ie w ic h tig s te n G renz- und K enndaten d e r i n d e r DDR g e f e r t i g t e n H a lb le ite r b a u e le m e n te . D ie K ennw erte werden im a llg e m e in e n f ü r e in e U m gebungstem peratur von


    OCR Scan     		PDF

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P

    equivalent transistor 2N1711

    Abstract: MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708 2N706A
    Text: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns


    OCR Scan     		PDF 2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A 2N744 BT2946 2N2946 equivalent transistor 2N1711 MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708

    equivalent transistor 2N1711

    Abstract: 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package 2N328A transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF


    OCR Scan     		PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 equivalent transistor 2N1711 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR

    mikroelektronik ddr

    Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d
    Text: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn­ daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden


    OCR Scan     		PDF