CR10
Abstract: M58LR128HB M58LR128HT VFBGA56
Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program
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M58LR128HT
M58LR128HB
VFBGA56
CR10
M58LR128HB
M58LR128HT
VFBGA56
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M36L0T7050T2
Abstract: M58LT128HB M58LT128HT M36L0t7050
Text: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 32 Mbit (2 Mb x16) PSRAM, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory – 1 die of 32 Mbit (2 Mb x16) Pseudo SRAM
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M36L0T7050T2
M36L0T7050B2
M36L0T7050T2:
88C4h
M36L0T7050B2:
88C5h
M36L0T7050T2
M58LT128HB
M58LT128HT
M36L0t7050
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Untitled
Abstract: No abstract text available
Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program
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M58LR128HT
M58LR128HB
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117h68
Abstract: CR10 J-STD-020B
Text: M30L0R7000T1 M30L0R7000B1 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
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M30L0R7000T1
M30L0R7000B1
54MHz
117h68
CR10
J-STD-020B
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M36L0T7060B
Abstract: M36L0T7060 TFBGA88 M69KW096B DSA0042593 flash E2p M58LT128HB M58LT128HT M36L0T7
Text: M36L0T7060T2 M36L0T7060B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (4 Mb x16) PSRAM, multichip package Preliminary Data Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory
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M36L0T7060T2
M36L0T7060B2
M36L0T7060T2:
88C4h
M36L0T7060B2:
88C5h
M36L0T7060B
M36L0T7060
TFBGA88
M69KW096B
DSA0042593
flash E2p
M58LT128HB
M58LT128HT
M36L0T7
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bsc 60h
Abstract: No abstract text available
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3372B
bsc 60h
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CR10
Abstract: J-STD-020B M58LR128GB M58LR128GT VFBGA56
Text: M58LR128GT M58LR128GB 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
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M58LR128GT
M58LR128GB
54MHz
CR10
J-STD-020B
M58LR128GB
M58LR128GT
VFBGA56
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Hardlock
Abstract: No abstract text available
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3372E
Hardlock
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bsc 60h
Abstract: AT49BV320C AT49BV320CT SA70 3372A
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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Hardlock
Abstract: AT49BV320C AT49BV320CT SA70
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3372D
Hardlock
AT49BV320C
AT49BV320CT
SA70
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M58LR256KB
Abstract: M58LR128KB
Text: M58LR128KT M58LR128KB M58LR256KT M58LR256KB 128 or 256 Mbit x16, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers
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M58LR128KT
M58LR128KB
M58LR256KT
M58LR256KB
M58LR128KT/B
M58LR256KT/B
M58LR256KB
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M58LT128HB
Abstract: M58LT128HT CR10 VFBGA56 026h
Text: M58LT128HT M58LT128HB 128 Mbit 8 Mb x 16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
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M58LT128HT
M58LT128HB
VFBGA56
M58LT128HB
M58LT128HT
CR10
VFBGA56
026h
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PSRAM
Abstract: M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT M69KB096AM
Text: M36L0R7060T1 M36L0R7060B1 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory
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M36L0R7060T1
M36L0R7060B1
M36L0R7060T1:
88C4h
M36L0R7060B1:
88C5h
TFBGA88
PSRAM
M36L0R7060B1
M36L0R7060T1
M58LR128HB
M58LR128HT
M69KB096AM
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J-STD-020B
Abstract: M30L0R7000B0 M30L0R7000T0 M36L0R7050B0 M36L0R7050T0 M69AR048B
Text: M36L0R7050T0 M36L0R7050B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Asynchronous
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M36L0R7050T0
M36L0R7050B0
M36L0R7050T0:
88C4h
M36L0R7050B0:
88C5h
J-STD-020B
M30L0R7000B0
M30L0R7000T0
M36L0R7050B0
M36L0R7050T0
M69AR048B
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AT49BV320C
Abstract: AT49BV320CT SA70 003EH
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3372F
AT49BV320C
AT49BV320CT
SA70
003EH
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PSRAM
Abstract: M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT ubp 100
Text: M36L0R7060T1 M36L0R7060B1 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory
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M36L0R7060T1
M36L0R7060B1
M36L0R7060T1:
88C4h
M36L0R7060B1:
88C5h
TFBGA88
PSRAM
M36L0R7060B1
M36L0R7060T1
M58LR128HB
M58LR128HT
ubp 100
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M58LR256KB
Abstract: M58LR128KB M58LR128KT CR10 M58LR256KT 4047N
Text: M58LR128KT M58LR128KB M58LR256KT M58LR256KB 128 or 256 Mbit x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Preliminary Data Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers
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M58LR128KT
M58LR128KB
M58LR256KT
M58LR256KB
M58LR128KT/B
M58LR256KT/B
M58LR256KB
M58LR128KB
CR10
4047N
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M58LT128HT
Abstract: Numonyx M36L0T7050T2 M58LT128HB M58LT128HTB 32-Mbit
Text: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multi-Level, Burst Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory
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M36L0T7050T2
M36L0T7050B2
M36L0T7050T2:
88C4h
M36L0T7050B2:
88C5h
52MHz
M58LT128HT
Numonyx
M36L0T7050T2
M58LT128HB
M58LT128HTB
32-Mbit
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Multi Chip Memory
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX69F3204C3T/B 32M-BIT [X16] FLASH AND 4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C
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MX69F3204C3T/B
32M-BIT
70/90ns
70/85ns
NOV/06/2002
NOV/20/2002
NOV/22/2002
PM0962
Multi Chip Memory
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Untitled
Abstract: No abstract text available
Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program
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M58LR128HT
M58LR128HB
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AT49BV320C
Abstract: AT49BV320CT SA70
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3372F
AT49BV320C
AT49BV320CT
SA70
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Untitled
Abstract: No abstract text available
Text: M36L0R7040T0 M36L0R7040B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM
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M36L0R7040T0
M36L0R7040B0
M36L0R7040T0:
88C4h
M36L0R7040B0:
88C5h
54MHz
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CR10
Abstract: M58LR128FB M58LR128FT VFBGA56
Text: M58LR128FT M58LR128FB 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
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M58LR128FT
M58LR128FB
54MHz
CR10
M58LR128FB
M58LR128FT
VFBGA56
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C8000-CFFFF
Abstract: Multi Chip Memory
Text: ADVANCED INFORMATION MX28F3204C3T/B 32M-BIT [X16] FLASH AND 4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C
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MX28F3204C3T/B
32M-BIT
70/90ns
70/85ns
NOV/06/2002
PM0962
C8000-CFFFF
Multi Chip Memory
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