MDE1752
Abstract: MDE1752RH
Text: N-Channel Trench MOSFET 40V, 66A, 8.0mΩ General Description Features VDS = 40V ID = 66A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDE1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability
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MDE1752
MDE1752
MDE1752RH
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MDE1752
Abstract: MDE1752R MAGNACHIP trench mosfet MDE1752T 40V, 50A n mosfet FEB2008 40V50A TW18
Text: Preliminary – Subject to change without notice N-Channel Trench MOSFET 40V, 66A, 8.5mΩ General Description Features The MDE1752 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability
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MDE1752
MDE1752
MDE1752R
MAGNACHIP
trench mosfet
MDE1752T
40V, 50A n mosfet
FEB2008
40V50A
TW18
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MDE1752
Abstract: MDE1752R
Text: N-Channel Trench MOSFET 40V, 66A,8.0mΩ General Description Features The MDE1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 66A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state
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MDE1752
MDE1752
MDE1752R
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