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    MT29F4G08ABADAWP

    Abstract: Micron MT29F8G08 MT29F8G16 MT29F4G16ABBDAH4 MT29F8G16ADBDAH4 MT29F4G08abada MT29F4G08ABA MT29F4G08ABADAH4 MT29F8G08A MT29F4G08
    Text: Micron Confidential and Proprietary 4Gb, 8Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,


    Original     		PDF MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4, MT29F8G08ADBDAH4, MT29F4G08ABADAWP Micron MT29F8G08 MT29F8G16 MT29F4G16ABBDAH4 MT29F8G16ADBDAH4 MT29F4G08abada MT29F4G08ABA MT29F4G08ABADAH4 MT29F8G08A MT29F4G08

    MX30UF4G26AB

    Abstract: MX30UF4G28AB MX30UF2G26AB MX30UF2G28AB SLC NAND
    Text: MX30UF2G26 28 AB MX30UF4G26(28)AB 1.8V, 2G/4G-bit NAND Flash Memory MX30UFxG26(28)AB P/N: PM2031 REV. 1.0, MAY 29, 2014 1 MX30UF2G26(28)AB MX30UF4G26(28)AB Contents 1.


    Original     		PDF MX30UF2G26 MX30UF4G26 MX30UFxG26 PM2031 MX30UF4G26AB MX30UF4G28AB MX30UF2G26AB MX30UF2G28AB SLC NAND

    MT29F8G08ABABA

    Abstract: MT29F8G08ABABAWP MT29F8G08aba MT29F8G08A MT29F8G08ab 29f8g08 Micron NAND flash M61A 8gb FLASH DRIVE 00H-31H
    Text: Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F8G08ABABA, MT29F8G08ABCBB Features • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status


    Original     		PDF MT29F8G08ABABA, MT29F8G08ABCBB 09005aef8386131b MT29F8G08ABABA MT29F8G08ABABAWP MT29F8G08aba MT29F8G08A MT29F8G08ab 29f8g08 Micron NAND flash M61A 8gb FLASH DRIVE 00H-31H

    Samsung Flash K9WAG08U1A

    Abstract: K9K8G08U0A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A
    Text: K9WAG08U1A K9K8G08U0A K9NBG08U5A FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WAG08U1A K9K8G08U0A K9NBG08U5A K9XXG08UXA Samsung Flash K9WAG08U1A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A

    K9WBG08U1M

    Abstract: K9KAG08U0M K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P
    Text: K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WBG08U1M K9KAG08U0M K9NCG08U5M K9XXG08XXM 100ns) K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P

    K9F2G08U0B-PCB0

    Abstract: K9F2G08U0B SAMSUNG 4gb NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability K9F2G08X0B K9F2G08U0B-PCB samsung k9f2g08U0b samsung 8GB Nand flash two-plane program nand bad block samsung
    Text: Preliminary FLASH MEMORY K9F2G08B0B K9F2G08U0B K9F2G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F2G08B0B K9F2G08U0B K9F2G08X0B K9F2G08U0B-PCB0 K9F2G08U0B SAMSUNG 4gb NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability K9F2G08X0B K9F2G08U0B-PCB samsung k9f2g08U0b samsung 8GB Nand flash two-plane program nand bad block samsung

    K9F8G08U0A-P

    Abstract: K9F8G08U0A K9F8G08 k9wbg08 K9WBG K9F8G08U0 K9WB K9F8G08U K9F8G08U0A-PCB0 K9XXG08UXX-XCB0
    Text: Advance FLASH MEMORY K9WBG08U5A K9F8G08U0A K9F8G08U0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WBG08U5A K9F8G08U0A 100ns) K9F8G08U0A-P K9F8G08U0A K9F8G08 k9wbg08 K9WBG K9F8G08U0 K9WB K9F8G08U K9F8G08U0A-PCB0 K9XXG08UXX-XCB0

    Untitled

    Abstract: No abstract text available
    Text: ESM T Preliminary F59D2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		PDF F59D2G81A 250us

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 8Gb, 16Gb, and 32Gb: x8 NAND Flash Memory Features NAND Flash Memory FNNL41B Features Figure 1: 48-Pin TSOP Type 1 • Organization – Page size: x8: 2,112 bytes 2,048 + 64 bytes Block size: 128 pages (256K + 8K bytes) – Plane size: 2,048 blocks


    Original     		PDF FNNL41B 48-Pin 09005aef82ba5f2a/PDF: 09005aef82b6f4de

    Micron NAND flash 32gb

    Abstract: No abstract text available
    Text: Advance‡ 8Gb, 16Gb, and 32Gb: x8 NAND Flash Memory Features NAND Flash Memory FNNL41B Features Figure 1: 48-Pin TSOP Type 1 • Organization – Page size: x8: 2,112 bytes 2,048 + 64 bytes Block size: 128 pages (256K + 8K bytes) – Plane size: 2,048 blocks


    Original     		PDF FNNL41B 48-Pin 09005aef82ba5f2a/PDF: 09005aef82b6f4de Micron NAND flash 32gb

    Untitled

    Abstract: No abstract text available
    Text: SpecTek Confidential and Proprietary 4Gb through 16Gb x8 M40A Features NAND Flash Memory FNNM40A Features Figure 1: 48-Pin TSOP Type 1 • Single-level cell SLC technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Block size: 64 pages (128K + 4K bytes)


    Original     		PDF FNNM40A 48-Pin 09005aef827534f6/Source: 09005aef8275346a

    NAND Flash

    Abstract: No abstract text available
    Text: ESMT F59D4G81A / F59D4G161A Flash 4 Gbit 512M x 8 / 256M x 16 1.8V NAND Flash Memory FEATURES       Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit


    Original     		PDF F59D4G81A F59D4G161A 16bit NAND Flash

    MT29F32G08

    Abstract: MT29F8G08MAA MT29F32G08TAA MT29F16G08QAA Micron NAND MT29F32 Micron MT29F8G08 MT29F32G MT29F16G08 MT29F8G08M
    Text: TN-29-25: Improving Performance Using Two-Plane Commands Introduction Technical Note Improving NAND Flash Performance Using Two-Plane Command Enabled Micron Devices MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA, MT29F8G08MAA, MT29F16G08QAA, and MT29F32G08TAA


    Original     		PDF TN-29-25: MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA, MT29F8G08MAA, MT29F16G08QAA, MT29F32G08TAA 80h-11h-80h-15h, 09005aef82cfa5d5 MT29F32G08 MT29F8G08MAA MT29F32G08TAA MT29F16G08QAA Micron NAND MT29F32 Micron MT29F8G08 MT29F32G MT29F16G08 MT29F8G08M

    K9F4G08U0M

    Abstract: K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB
    Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Nov. 15. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


    Original     		PDF K9K8G08U1M K9F4G08U0M K9F4G08U0M-Y K9F4G08U0M K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB

    MT29F4G08

    Abstract: MT29F4G16 MT29F4G08abada MT29F8G16 MT29F8G08 MT29F8G16ADBDA MT29F4G16ABADAH4 MT29F4G08ABADAH Micron MT29F8G MT29F4G08ABADAH4
    Text: Micron Confidential and Proprietary 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,


    Original     		PDF MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4, MT29F8G08ADBDAH4, MT29F4G08 MT29F4G16 MT29F4G08abada MT29F8G16 MT29F8G08 MT29F8G16ADBDA MT29F4G16ABADAH4 MT29F4G08ABADAH Micron MT29F8G MT29F4G08ABADAH4

    mt29f4g08abadawp

    Abstract: MT29F4G08ABADAH4 MT29F4G08abada MT29F8G16 MT29F4G16 MT29F8G16ADBDAH4 Micron MT29F8G08 MT29F4G16ABADAH4 MT29F4G16ABADAWP MT29F4G16ABBDAHC
    Text: Micron Confidential and Proprietary 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,


    Original     		PDF MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4, MT29F8G08ADBDAH4, mt29f4g08abadawp MT29F4G08ABADAH4 MT29F4G08abada MT29F8G16 MT29F4G16 MT29F8G16ADBDAH4 Micron MT29F8G08 MT29F4G16ABADAH4 MT29F4G16ABADAWP MT29F4G16ABBDAHC

    MT29F16G08ABACA

    Abstract: MT29F16G08ABACAWP 64gb NAND chip MT29F32G08afacawp MT29F32G08AFACA MT29F64G08 M72A micron nand flash chip 16gb MT29F16G08ABCCBH1-10ITZ:C TR MT29F16G08AB
    Text: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous


    Original     		PDF MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB 09005aef844588dc MT29F16G08ABACA MT29F16G08ABACAWP 64gb NAND chip MT29F32G08afacawp MT29F64G08 M72A micron nand flash chip 16gb MT29F16G08ABCCBH1-10ITZ:C TR MT29F16G08AB

    K9F4G08U0B

    Abstract: K9F4G08U0B-PCB0 K9G4G08U0B Samsung k9f4g08u0b SAMSUNG 4gb NAND Flash Qualification Report K9F4G08U0B-I SAMSUNG NAND Flash Qualification Report K9G4G08B0B SAMSUNG 256Mb NAND Flash Qualification Reliability k9f4g08u0bpcb0
    Text: Advance FLASH MEMORY K9K8G08U1B K9F4G08U0B K9F4G08B0B K9XXG08XXB INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9K8G08U1B K9F4G08U0B K9F4G08B0B K9XXG08XXB K9F4G08U0B-PCB0 K9G4G08U0B Samsung k9f4g08u0b SAMSUNG 4gb NAND Flash Qualification Report K9F4G08U0B-I SAMSUNG NAND Flash Qualification Report K9G4G08B0B SAMSUNG 256Mb NAND Flash Qualification Reliability k9f4g08u0bpcb0

    K9F4G08U0M

    Abstract: two-plane program nand
    Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History Draft Date Remark 1. Initial issue 2. two-plane page program technical note is modified. p27, p35 3. Figure 17.(p37) is modified.


    Original     		PDF K9K8G08U1M K9F4G08U0M K9F4G08U0M two-plane program nand

    MT29F16G08ABACA

    Abstract: MT29F32G08afacawp JESD47 compliant MT29F32G08AFACA MT29F16G08Abacawp MT29F32G08A MT29F64G08A MT29F64G08 DR10H NAND Flash DIE
    Text: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous


    Original     		PDF MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB 09005aef844588dc MT29F16G08ABACA MT29F32G08afacawp JESD47 compliant MT29F16G08Abacawp MT29F32G08A MT29F64G08A MT29F64G08 DR10H NAND Flash DIE

    K9K8G08U0A-PCB0

    Abstract: K9WAG08U1A-PCB0 K9F4G08U0A K9K8G08U0A K9K8G08U0A-P 8G nand flash chip 8gb samsung 1Gb nand flash samsung 8Gb nand flash K9WAG08U1A
    Text: Preliminary FLASH MEMORY K9WAG08U1A K9K8G08U0A K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WAG08U1A K9K8G08U0A K9XXG08UXA K9K8G08U0A-PCB0 K9WAG08U1A-PCB0 K9F4G08U0A K9K8G08U0A K9K8G08U0A-P 8G nand flash chip 8gb samsung 1Gb nand flash samsung 8Gb nand flash K9WAG08U1A

    29f32g08

    Abstract: MT29F64G08C MT29F32G08CBABA MT29F128G08C MT29F32G08C MT29F256G08 MT29F32G08CBABAWP MT29F32G08CB 29F32G mt29f32g08cba
    Text: Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08CBABA, MT29F64G08C[E/F]ABA, MT29F128G08C[J/K/M]ABA, MT29F256G08CUABA, MT29F32G08CBABB, MT29F32G08CBCBB, MT29F64G08CFABB, MT29F64G08CECBB, MT29F128G08CJABB,


    Original     		PDF 128Gb, 256Gb MT29F32G08CBABA, MT29F64G08C MT29F128G08C MT29F256G08CUABA, MT29F32G08CBABB, MT29F32G08CBCBB, MT29F64G08CFABB, MT29F64G08CECBB, 29f32g08 MT29F32G08CBABA MT29F32G08C MT29F256G08 MT29F32G08CBABAWP MT29F32G08CB 29F32G mt29f32g08cba

    Untitled

    Abstract: No abstract text available
    Text: MX30LF2G28AB MX30LF4G28AB 3V, 2G/4G-bit NAND Flash Memory MX30LFxG28AB P/N: PM2029 REV. 0.02, APR. 02, 2014 1 MX30LF2G28AB MX30LF4G28AB Contents 1.


    Original     		PDF MX30LF2G28AB MX30LF4G28AB MX30LFxG28AB PM2029

    MT29F128G08CFABA

    Abstract: Micron 512gb nand FLASH MT29F128G08CECBB MT29F64G08CBCB MT29F64G08 MT29F512G MT29F64G08cba MT29F256G08CJABA MT29F128G08CFABB 256gb toggle nand
    Text: Micron Confidential and Proprietary Advance‡ 64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND Features NAND Flash Memory Features • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status


    Original     		PDF 128Gb, 256Gb, 512Gb JESD47 48-pin 09005aef841b7a46 MT29F128G08CFABA Micron 512gb nand FLASH MT29F128G08CECBB MT29F64G08CBCB MT29F64G08 MT29F512G MT29F64G08cba MT29F256G08CJABA MT29F128G08CFABB 256gb toggle nand