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    80H10 Search Results

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    80H10 Price and Stock

    Bel Fuse 0680H1000-05

    FUSE BRD MNT 1A 125VAC/VDC 2SMD
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    DigiKey 0680H1000-05 Digi-Reel 4,855 1
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    0680H1000-05 Cut Tape 4,855 1
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    0680H1000-05 Reel 5,000
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    Avnet Americas 0680H1000-05 Reel 4 Weeks 5,000
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    Interstate Connecting Components 0680H1000-05 1,250
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    Avnet Abacus 0680H1000-05 Reel 20 Weeks 5,000
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    STMicroelectronics STPS80H100TV

    DIODE MOD SCHOTT 100V 40A ISOTOP
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    DigiKey STPS80H100TV Tube 2,014 1
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    Avnet Americas STPS80H100TV Tube 100 25 Weeks 100
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    Mouser Electronics STPS80H100TV 294
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    Newark STPS80H100TV Bulk 7 1
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    STMicroelectronics STPS80H100TV 294 1
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    Bristol Electronics STPS80H100TV 19
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    STPS80H100TV 15 1
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    TME STPS80H100TV 1
    • 1 $17.1
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    Avnet Silica STPS80H100TV 17 Weeks 10
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    EBV Elektronik STPS80H100TV 26 Weeks 10
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    STMicroelectronics STPS80H100CWLY

    DIODE ARR SCHOTT 100V 40A TO247
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    DigiKey STPS80H100CWLY Tube 311 1
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    Avnet Americas STPS80H100CWLY Tube 45 Weeks 600
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    Mouser Electronics STPS80H100CWLY 928
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    Newark STPS80H100CWLY Bulk 63 1
    • 1 $5.31
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    STMicroelectronics STPS80H100CWLY 928 1
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    Avnet Silica STPS80H100CWLY 17 Weeks 30
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    Hammond Manufacturing 1580H10B1

    POWER STRP 10.5"15A 10OUT 15'CRD
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    DigiKey 1580H10B1 Bag 1
    • 1 $98.24
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    Mouser Electronics 1580H10B1
    • 1 $96.6
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    Newark 1580H10B1 Bulk 18 1
    • 1 $100.46
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    Master Electronics 1580H10B1
    • 1 $98.28
    • 10 $88.01
    • 100 $79.52
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    JRH Electronics 1580H10B1

    POWER STRP 10.5"15A 10OUT 15'CRD
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    DigiKey 1580H10B1 Bag 1
    • 1 $167.27
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    • 100 $143.0545
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    Find more 80H10 price and stock on Findchips.com

    80H10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC58NVG1S3ETA00

    Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
    Text: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NVG1S3ETA00 TC58NVG1S3E 2048blocks. 2112-byte 2010-01-25C TC58NVG1S3ETA00 TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111

    K9F1208U0C-PCB

    Abstract: No abstract text available
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PCB0000 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 K9F1208U0C-PCB

    SAMSUNG NAND Flash Qualification Report

    Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PIB0T00 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 SAMSUNG NAND Flash Qualification Report K9F1208U0CJIB0 marking date code samsung semiconductor

    TC58NYG0S3E

    Abstract: TC58NYG0S3ETA00 TC58NYG0S
    Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NYG0S3ETA00 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETA00 TC58NYG0S

    MT29F4G08ABADAWP

    Abstract: Micron MT29F8G08 MT29F8G16 MT29F4G16ABBDAH4 MT29F8G16ADBDAH4 MT29F4G08abada MT29F4G08ABA MT29F4G08ABADAH4 MT29F8G08A MT29F4G08
    Text: Micron Confidential and Proprietary 4Gb, 8Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,


    Original     		PDF MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4, MT29F8G08ADBDAH4, MT29F4G08ABADAWP Micron MT29F8G08 MT29F8G16 MT29F4G16ABBDAH4 MT29F8G16ADBDAH4 MT29F4G08abada MT29F4G08ABA MT29F4G08ABADAH4 MT29F8G08A MT29F4G08

    MX30UF4G26AB

    Abstract: MX30UF4G28AB MX30UF2G26AB MX30UF2G28AB SLC NAND
    Text: MX30UF2G26 28 AB MX30UF4G26(28)AB 1.8V, 2G/4G-bit NAND Flash Memory MX30UFxG26(28)AB P/N: PM2031 REV. 1.0, MAY 29, 2014 1 MX30UF2G26(28)AB MX30UF4G26(28)AB Contents 1.


    Original     		PDF MX30UF2G26 MX30UF4G26 MX30UFxG26 PM2031 MX30UF4G26AB MX30UF4G28AB MX30UF2G26AB MX30UF2G28AB SLC NAND

    MT29F8G08ABABA

    Abstract: MT29F8G08ABABAWP MT29F8G08aba MT29F8G08A MT29F8G08ab 29f8g08 Micron NAND flash M61A 8gb FLASH DRIVE 00H-31H
    Text: Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F8G08ABABA, MT29F8G08ABCBB Features • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status


    Original     		PDF MT29F8G08ABABA, MT29F8G08ABCBB 09005aef8386131b MT29F8G08ABABA MT29F8G08ABABAWP MT29F8G08aba MT29F8G08A MT29F8G08ab 29f8g08 Micron NAND flash M61A 8gb FLASH DRIVE 00H-31H

    K9F1208U0C-PCB0

    Abstract: K9F1208U0C k9f1208u0cpcb0 k9f1208r0c K9F1208X0C K9F1208U0C-P K9F1208B0C K9F1208B0C-P K9F1208R0C-J
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C 100ns) K9F1208U0C-PCB0 K9F1208U0C k9f1208u0cpcb0 K9F1208X0C K9F1208U0C-P K9F1208B0C K9F1208B0C-P K9F1208R0C-J

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204

    K9F1208U0C-PCB0

    Abstract: marking date code samsung semiconductor K9F1208U0C K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T K9F1208U0C-JIB0T
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C o824KB K9F1208U0C-FIB00 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 K9F1208U0C-PCB0T K9F1208U0C-PCB0 marking date code samsung semiconductor K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T

    K9WBG08U1M

    Abstract: K9KAG08U0M K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P
    Text: K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9WBG08U1M K9KAG08U0M K9NCG08U5M K9XXG08XXM 100ns) K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    samsung ba92

    Abstract: BA137 k8p3215
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215

    Untitled

    Abstract: No abstract text available
    Text: Advance‡ 8Gb, 16Gb, and 32Gb: x8 NAND Flash Memory Features NAND Flash Memory FNNL41B Features Figure 1: 48-Pin TSOP Type 1 • Organization – Page size: x8: 2,112 bytes 2,048 + 64 bytes Block size: 128 pages (256K + 8K bytes) – Plane size: 2,048 blocks


    Original     		PDF FNNL41B 48-Pin 09005aef82ba5f2a/PDF: 09005aef82b6f4de

    Micron NAND flash 32gb

    Abstract: No abstract text available
    Text: Advance‡ 8Gb, 16Gb, and 32Gb: x8 NAND Flash Memory Features NAND Flash Memory FNNL41B Features Figure 1: 48-Pin TSOP Type 1 • Organization – Page size: x8: 2,112 bytes 2,048 + 64 bytes Block size: 128 pages (256K + 8K bytes) – Plane size: 2,048 blocks


    Original     		PDF FNNL41B 48-Pin 09005aef82ba5f2a/PDF: 09005aef82b6f4de Micron NAND flash 32gb

    Untitled

    Abstract: No abstract text available
    Text: SpecTek Confidential and Proprietary 4Gb through 16Gb x8 M40A Features NAND Flash Memory FNNM40A Features Figure 1: 48-Pin TSOP Type 1 • Single-level cell SLC technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Block size: 64 pages (128K + 4K bytes)


    Original     		PDF FNNM40A 48-Pin 09005aef827534f6/Source: 09005aef8275346a

    MT29F32G08

    Abstract: MT29F8G08MAA MT29F32G08TAA MT29F16G08QAA Micron NAND MT29F32 Micron MT29F8G08 MT29F32G MT29F16G08 MT29F8G08M
    Text: TN-29-25: Improving Performance Using Two-Plane Commands Introduction Technical Note Improving NAND Flash Performance Using Two-Plane Command Enabled Micron Devices MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA, MT29F8G08MAA, MT29F16G08QAA, and MT29F32G08TAA


    Original     		PDF TN-29-25: MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA, MT29F8G08MAA, MT29F16G08QAA, MT29F32G08TAA 80h-11h-80h-15h, 09005aef82cfa5d5 MT29F32G08 MT29F8G08MAA MT29F32G08TAA MT29F16G08QAA Micron NAND MT29F32 Micron MT29F8G08 MT29F32G MT29F16G08 MT29F8G08M

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3HBAI6 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.


    Original     		PDF TC58NYG1S3HBAI6 TC58NYG1S3HBAI6 2048blocks. 2176-byte 2013-01-18C

    06SEC

    Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
    Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash

    K8P3215UQB

    Abstract: K8P2815 K8p3215 K8P3215U k8p2815u K8P32 48FBGA samsung nor flash Samsung MCP K8P6415
    Text: K8P3215UQB FLASH MEMORY 32Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P3215UQB 10MAX 48FBGA 48-PIN 1220F 047MAX K8P3215UQB K8P2815 K8p3215 K8P3215U k8p2815u K8P32 samsung nor flash Samsung MCP K8P6415

    K8P6415UQB

    Abstract: K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64
    Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P6415UQB 047MAX 64-Ball 60Solder K8P6415UQB K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64

    TC58NYG1S3EBAI4

    Abstract: P-TFBGA63-0911-0
    Text: TC58NYG1S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NYG1S3EBAI4 TC58NYG1S3E 2048blocks. 2112-byte 2012-09-01C TC58NYG1S3EBAI4 P-TFBGA63-0911-0