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    interfacing of RAM and ROM with 8085

    Abstract: LTWF AD7571AQ AD7571 AD7571BQ AD7571KN AD7571SD AD7574 D28B "16-Bit Microprocessors"
    Text: ► A N A LO G D E V IC E S CMOS |xP-Compatible 10-Bit Plus Sign ADC AD7571 FE A T U R ES 10-Bit Plus S ig n Resolution N o M isse d Codes Over Full Temperature Range Conversion Time 80fis Differential A n alog Voltage Inputs, ± 10V Range Serial and Parallel Data O utputs


    OCR Scan     		PDF 10-Bit 80fjis AD7571 AD7571 interfacing of RAM and ROM with 8085 LTWF AD7571AQ AD7571BQ AD7571KN AD7571SD AD7574 D28B "16-Bit Microprocessors"

    IRG4PC50KD

    Abstract: No abstract text available
    Text: International IÖR Rectifier PD -9.1582A IRG4PC50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc =1 Ofis, @360V VCE start , T j= 1 2 5 ° C ,


    OCR Scan     		PDF IRG4PC50KD IRG4PC50KD

    IRF 860

    Abstract: 5056B IRF 150a
    Text: , I ,• In ternational I I«R Rectifier PD -5.056B preliminary "HALF-BRIDGE" IGBT INT-A-PAK G A 150TS6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    OCR Scan     		PDF 150TS6 IRF 860 5056B IRF 150a

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifie f PD - 5.048B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA500TD60U Ultra-Fast Speed IGBT Features V ce s = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


    OCR Scan     		PDF GA500TD60U 1000S

    Untitled

    Abstract: No abstract text available
    Text: In te r n a tio n a l IQ R R e c tifie r p d p re lim in a ry - s .o bza G A 1 5 0 T D 1 2 0 U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Fe at ur es V • G en eratio n 4 IG BT te ch n o lo g y • S tan dard : O p tim ize d for m inim um saturation


    OCR Scan     		PDF 10kHz

    a2305

    Abstract: A2307 2sk1969 N CH MOSFET
    Text: 2SK1969-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ -FAP-IIIA SERIES • Features IOutline Drawings • Hig i current • Low on-resistance • No secondary breakdown • L o v driving power • H ig i forward Transconductance


    OCR Scan     		PDF 2SK1969-01 a2305 A2307 2sk1969 N CH MOSFET

    Untitled

    Abstract: No abstract text available
    Text: PD -5.046 International TOR Rectifier CPV362M4F IG BTSIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for medium operating 1 to 10 kHz


    OCR Scan     		PDF CPV362M4F 360Vdc,

    VN2410L equivalent

    Abstract: VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450
    Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r 's ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I I I OOOO ' ' I


    OCR Scan     		PDF ivn6100tnu to-39 ivn6200cnd to-220 vn0401d ivn6200cne t0-220 irf533 ivn6200cnf VN2410L equivalent VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450

    Untitled

    Abstract: No abstract text available
    Text: QUALITY AND RELIABILITY OF OPTOELECTRONIC COMPONENTS Q U A L IT Y A N D R E L IA B IL IT Y C O S T S T he circuit d esigner m ust be aw are o f the expected reliabilty o f the m any d iffere n t com ponents used. T his allow s control o f life cycle costs, such as w arranty costs, repair costs and dow ntim e costs,


    OCR Scan     		PDF 12min.

    TA 8783 N

    Abstract: pin IC 8783 n ss 7941 941L
    Text: TELEDYNE COMPONENTS 2flE D • fl^Ji7bQH QQQb471 'J J B lT F l CD II ^ J s £ \ ^Z . VN0104, VN0106 SEMICONDUCTOR_VNOIQ9 N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs T‘ *7' u ORDERING INFORMATION TO-226AA TO-92 Plastic Package Sorted Chips In Waffle Pack


    OCR Scan     		PDF QQQb471 VN0104, VN0106 O-226AA VN0104N3 VN0104ND VN0106N3 VN0106ND VN0109N& VN0109ND TA 8783 N pin IC 8783 n ss 7941 941L

    hh 004 TO92

    Abstract: VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m hh 004 TO92 VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L

    57-9130

    Abstract: VMP4 DV2820W DV28120 DVd030s DV28120V DV2805S DV2805W DV2880T DV2810S
    Text: RF Power FETs Selector G uide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BVq s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175 5


    OCR Scan     		PDF 28Vdc DV2805S DV2805W DV2805Z DV2810S DV2810W DV2810Z DV2820S DV2820W DV2820Z 57-9130 VMP4 DV28120 DVd030s DV28120V DV2880T

    RELAY 1ZS

    Abstract: VN1706D IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641
    Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 // 1 / 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150


    OCR Scan     		PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 RELAY 1ZS VN1706D IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641

    VP100

    Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0


    OCR Scan     		PDF VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP100 VP1001P VP0300B VP0300M VP0808L

    GA1030

    Abstract: No abstract text available
    Text: TMS29F040 524288 BY 8-BIT FLASH MEMORY . • • • • • • • • • • SMJS820B - APRIL 1996 - REVISED NOVEMBER 1997 Single Power Supply 5 V ± 10% - 3.3 V ± 0.3 V - See ’29LF040/ 29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LFO40/&#39;29VFO4O


    OCR Scan     		PDF SMJS820B TMS29F040 29LF040/ 29VF040 SMJS825) 29LFO40/ 29VFO4O GA1030

    Untitled

    Abstract: No abstract text available
    Text: IRF330, IRF331y IRF332, IRF333 I ia ttr is sem conduc or 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 4.5A and 5.5A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF330, IRF331y IRF332, IRF333 beRF333

    IA17

    Abstract: No abstract text available
    Text: / T 7 S G S -1H 0M S 0N M29W004T *• 7 /. HBSBEHllgUMWlIgg_ M29W004B 4 Mb x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY ■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: lO^is typical


    OCR Scan     		PDF M29W004T M29W004B 100ns IA17

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifie f PD - 5.054 GA250TD120U PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Fe at ur es — • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses


    OCR Scan     		PDF GA250TD120U 10kHz

    IRFF121

    Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
    Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150


    OCR Scan     		PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 IRFF121 IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642

    VN90AB

    Abstract: 2N6658 VN67AF equivalent 2n6659 equivalent 2SK173 BUZ 20 BUZ33 VN46AF equivalent VN67AF cross reference IRF240
    Text: Siliconix 1-1? f l Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170


    OCR Scan     		PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 VN90AB 2N6658 VN67AF equivalent 2n6659 equivalent 2SK173 BUZ 20 BUZ33 VN46AF equivalent VN67AF cross reference IRF240

    VN2410M

    Abstract: VN1210M siliconix VN10KM vn10le VN1710m BSR70 BSR72 BSR76 VN1210L VN1710L
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25 0.25 0.7 1.0 1.0 1.0


    OCR Scan     		PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN2410M VN1210M siliconix VN10KM vn10le VN1710m BSR70 BSR72 BSR76 VN1210L VN1710L

    IRF450 to-92

    Abstract: VN2406M siliconix VN10KM VN2410M IRF340 IRF350 IRF440 IRF450 VN1210L IRF820
    Text: Ü Ü A C D ^ U /C D M i v i a D r/\W i i v i v ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ /\r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING Packages: I BV qss Volts 45 0-500 TO-3 TO-220 S ilic o n ix


    OCR Scan     		PDF to-220 to-39 to-237 to-92 to-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF450 to-92 VN2406M siliconix VN10KM VN2410M IRF340 IRF350 VN1210L IRF820

    SD220HD

    Abstract: SD220 s0220 SD220CHP SD221CHP SD221HD Teledyne Semiconductor n fet 60v 0.05a
    Text: TELEDYNE COMPONENTS m 2ÖE D fl^tÜS G O O ^ S 2 • SD220, SD221 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FET O R D E R IN G IN F O R M A T IO N Sorted Chips, in Waffle Pack SD220CHP SD221CHP TO-205AF Hermetic Package . SD220HD SD221HD Description


    OCR Scan     		PDF SD220 SD221 SD220CHP SD221CHP O-205AF SD220HD SD221HD SD220 s0220 SD221CHP SD221HD Teledyne Semiconductor n fet 60v 0.05a

    irfp150

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRFP150/151/152/153 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRFP150/151/152/153 IRFP150 1000C