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    VP0300B Search Results

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    VP0300B Price and Stock

    Vishay Siliconix VP0300B-E3

    MOSFET P-CH 30V 0.32A TO-205
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    DigiKey VP0300B-E3 Tube 100
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    Vishay Intertechnologies VP0300B-E3

    Transistor MOSFET P-CH 30V 1.25A 3-Pin TO-205AD T/R - Bulk (Alt: VP0300B-E3)
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    Avnet Americas VP0300B-E3 Bulk 100
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    Vishay Siliconix VP0300B-5

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    Bristol Electronics VP0300B-5 60
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    Vishay Siliconix VP0300B

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    Bristol Electronics VP0300B 4
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    Quest Components VP0300B 398
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    SGS Semiconductor Ltd VP0300B

    INSTOCK
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    Chip 1 Exchange VP0300B 25
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    VP0300B Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VP0300B Vishay P-Channel Enhancement-Mode MOSFET Transistors Original PDF
    VP0300B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VP0300B Unknown FET Data Book Scan PDF
    VP0300B Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VP0300B Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VP0300B Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    VP0300B Vishay Telefunken P-Channel Enhancement-Mode MOSFET Transistors Scan PDF

    VP0300B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    VP0300M

    Abstract: VP0300M equivalent TA 7061 TO-205AD VP0300B VP0300L VQ2001J VQ2001P
    Text: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M


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    VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P O-226AA, VP0300L P-38283--Rev. VP0300M VP0300M equivalent TA 7061 TO-205AD VP0300B VQ2001J VQ2001P PDF

    1A60T

    Abstract: p-channel DMOS VP0300 VP0300B VP0300L
    Text: VP0300 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package TO-39 TO-92 -30V 2.5Ω -1.5A VP0300B VP0300L Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process


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    VP0300 VP0300B VP0300L 1A60T p-channel DMOS VP0300 VP0300B VP0300L PDF

    VP0300B

    Abstract: VQ2001P VP0300L VP0300LS VQ2001J
    Text: VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5


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    VP0300B/L/LS, VQ2001J/P VP0300B VP0300L VQ2001J VQ2001P VP0300LS O-226AA, VP0300L S-58620--Rev. VP0300B VQ2001P VP0300LS VQ2001J PDF

    VP0300M

    Abstract: VP0300L
    Text: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M


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    VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P O-226AA, PDF

    75576

    Abstract: AN804 VP0300B VP0300L VP0300M VQ2001J VQ2001P
    Text: VP0300B/L/M, VQ2001J/P Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = -12 V -2 to -4.5 -1.25 VP0300L 2.5 @ VGS = -12 V -2 to -4.5 -0.32 2.5 @ VGS = -12 V


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    VP0300B/L/M, VQ2001J/P VP0300B VP0300L VQ2001J VQ2001P VP0300M AN804 VP0300B O226AA, 75576 AN804 VP0300L VP0300M VQ2001J VQ2001P PDF

    vp0300m

    Abstract: VP0300B VP0300L VQ2001J VQ2001P 38283
    Text: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M


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    VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P O-226AA, VP0300L P-38283--Rev. vp0300m VP0300B VQ2001J VQ2001P 38283 PDF

    ir513

    Abstract: IR9513 lm324 4mA to 20mA transmitter XTR110 XTR110AG XTR110BG XTR110KP XTR110KU ZVP1304A SBOS141C
    Text: XTR110 SBOS141C – JANUARY 1984 – REVISED SEPTEMBER 2009 PRECISION VOLTAGE-TO-CURRENT CONVERTER/TRANSMITTER FEATURES APPLICATIONS ● 4mA TO 20mA TRANSMITTER ● SELECTABLE INPUT/OUTPUT RANGES: 0V to +5V, 0V to +10V Inputs 0mA to 20mA, 5mA to 25mA Outputs


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    XTR110 SBOS141C XTR110 ir513 IR9513 lm324 4mA to 20mA transmitter XTR110AG XTR110BG XTR110KP XTR110KU ZVP1304A SBOS141C PDF

    2N3055 TO-220

    Abstract: how to connect 2N3055 ir9513
    Text: XTR110 SBOS141C – JANUARY 1984 – REVISED SEPTEMBER 2009 PRECISION VOLTAGE-TO-CURRENT CONVERTER/TRANSMITTER FEATURES APPLICATIONS ● 4mA TO 20mA TRANSMITTER ● SELECTABLE INPUT/OUTPUT RANGES: 0V to +5V, 0V to +10V Inputs 0mA to 20mA, 5mA to 25mA Outputs


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    XTR110 SBOS141C XTR110 2N3055 TO-220 how to connect 2N3055 ir9513 PDF

    VP0300M

    Abstract: VP0300L VP0300B-2 VP0300B VP0300
    Text: VP0300 SERIES P-Channel Enhancement-Mode MOS Transistors HHSüSSÜS PRODUCT SUMMARY PART NUMBER V BR DSS (V) VP0300B -3 0 VP0300L VP0300M BOTTOM VIEW TO-39 (TO-205AD) •d "W (A) PACKAGE 2.5 -1 .2 5 TO -39 -3 0 2.5 -0 .3 2 TO -92 -3 0 2.5 - 0 .5 TO -237 1 SOURCE


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    VP0300 VP0300B VP0300L VP0300M O-205AD) O-226AA) O-237 VP0300B2 VP0300L VP0300B. VP0300B-2 PDF

    vp0300m

    Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


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    VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln vp0300m VP0300B VP0808L VQ2001P VQ2004P PDF

    Untitled

    Abstract: No abstract text available
    Text: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number rDS »n M a x (Q ) V GS(th) (V) I d (A) VP0300B 2.5 @ VGs = -1 2 V - 2 to -4.5 -1.25 VP0300L 2.5 @ VGs - - 1 2 V - 2 to -4.5 -0.32 2.5 @ VGs = -1 2 V -2 to -4.5


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    VP0300B/L/M, VQ2001J/P VP0300B VP0300L VPG300M VQ200U VQ2001P P-38283--Rev. 15-Aug-94 PDF

    VP0808B

    Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


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    VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300B VP0300M VP0808L VQ2001P VQ2004P PDF

    VP100

    Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0


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    VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP100 VP1001P VP0300B VP0300M VP0808L PDF

    Untitled

    Abstract: No abstract text available
    Text: Oi Supertex in V P 0300 c . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss/ ^DSfONI ' d ON b v dgs (max) (min) TO-39 TO-92 -30V 2.5Ì1 -1.5A VP0300B VP0300L Advanced DMOS Technology


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    VP0300B VP0300L PDF

    Untitled

    Abstract: No abstract text available
    Text: VP0300 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ Order Number / Package R d S ON I d (ON) BVdgs (max) (min) TO-39 TO-92 -30V 2.5Q -1.5A VP0300B VP0300L Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process


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    VP0300 VP0300B VP0300L 300ns PDF

    VP0300M

    Abstract: 150EC VP0300L
    Text: T e m ic siiiconh_ VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number • V br dss Min (V) ; ■ Id (A) r DS(on) Max (Q) VGS(th) (V) VP0300B 2.5@ V GS= -1 2 V - 2 to -4.5 -1.25 VP0300L 2.5 @ VGS = -1 2 V


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    VP0300B/L/M, VQ2001J/P VP0300B VP0300L VP0300M VQ2001J VQ2001P AN804, P-38283--Rev. 150EC PDF

    VP0300M

    Abstract: k 2541 30v IN400 VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


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    VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300M k 2541 30v IN400 VP0300B VP0808L PDF

    VP0300B

    Abstract: vishay LT VP0300L VP0300LS VQ2001J VQ2001P 70217
    Text: VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS M in (V ) rDS(on) Max (Q ) Id (A) V GS(th) (V ) VP0300B 2.5 @ VGS = —12 V - 2 to —4.5 -1.25 VP0300L


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    VP0300B/L/LS, VQ2001J/P VP0300B VP0300L VP0300LS VQ2001J VQ2001 S-58620â -Jun-99 vishay LT VP0300L VP0300LS VQ2001J VQ2001P 70217 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ Supertex inc. VP0300 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information -30V Order Number / Package R DS ON If BVdss/ BVdbs (max) 2.5£2 -1.5A TO-39 TO-92 VP0300B VP0300L Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process


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    VP0300 VP0300B VP0300L 300ps PDF

    041 itt diode

    Abstract: VP0300M VQ7254J VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


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    VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln 041 itt diode VP0300M VQ7254J VP0300B VP0808L PDF

    Untitled

    Abstract: No abstract text available
    Text: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)


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    T0220 14-Pin VQ2001J VQ200IP VQ2004J T0236 TP0101T TP0202T TP06I0T VP06I0T PDF

    Untitled

    Abstract: No abstract text available
    Text: BURR-BROW N XTR110 PRECISION VOLTAGE-TO-CURRENT CONVERTER/TRANSMITTER FEATURES APPLICATIONS • 4mA TO 20m« TRANSMITTER • SELECTARLE INPUT/OUTPUT RANGES: 0V to + 5 V , 0V to + 10V Inputs 0mA to 20mA, 5mA to 25mA Outputs Other Ranges • 0.005% MAX NONLINEARITY, 14 BIT


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    XTR110 10-turn LM324 IR9513* IRFF9113* PDF

    2sk to-92

    Abstract: VNS012A Siliconix v020 VNS009A VNS009D VNS013A VNT0080 VNT008A VNT009A
    Text: - 330 - 13=25=0 Si £ tt Vd s or € * Vd g % (V) Vg s Id * /CH (V) (A) 4# •u Pd Ig s s loss max * /CH (W) (nA) Vg s (V) Vd s (V) (kiA) (V) (V) (nA) 14 (Ta=25°C) b(on) Vd s = Vg s Ciss g fs Coss Crss ft & flt % V g s =0 (max) *typ V g s (0) (V) *typ (A)


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    VNS009A O-204AA VNS009D O-220AB VNS012A O-204AE VQ1006P VQ2001J VQ2001P v02004j 2sk to-92 Siliconix v020 VNS013A VNT0080 VNT008A VNT009A PDF

    VP0808B

    Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 5.0 5.0 -90 -60 -30 5.0 5.0 2.0 -8 0


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    VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300B VP0300M VP0808L VQ2001P VQ2004P PDF