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    8.00T Price and Stock

    STMicroelectronics ALTAIR05T-800TR

    IC OFFLINE SWITCH FLYBACK 16SO
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    DigiKey ALTAIR05T-800TR Reel 5,000 2,500
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    ALTAIR05T-800TR Cut Tape 2,038 1
    • 1 $1.24
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    Bristol Electronics ALTAIR05T-800TR 775
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    ALTAIR05T-800TR 17,378
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    Analog Devices Inc LTC6930IMS8-8.00#TRPBF

    IC OSC SILICON 8MHZ 8-MSOP
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    DigiKey LTC6930IMS8-8.00#TRPBF Reel 5,000 2,500
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    Analog Devices Inc LTC6930IMS8-8.00#TRPBF 6,709 1
    • 1 $4.07
    • 10 $3.878
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    WeEn Semiconductor Co Ltd TYN30-800TQ

    SCR 800V 30A TO220E
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    DigiKey TYN30-800TQ Tube 4,373 1
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    Avnet Asia TYN30-800TQ 8 Weeks 6,000
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    Bourns Inc MH1608-800T

    FERRITE BEAD 80 OHM 0603 1LN
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    DigiKey MH1608-800T Reel 4,000 4,000
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    MH1608-800T Cut Tape 3,805 1
    • 1 $0.1
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    Tai-Tech Advanced Electronics Co Ltd HCB 2012KF-800T30

    80 OHMS @ 100 MHZ 1 POWER, SIGNA
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    DigiKey HCB 2012KF-800T30 Reel 4,000 4,000
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    HCB 2012KF-800T30 Cut Tape 3,860 1
    • 1 $0.1
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    Find more 8.00T price and stock on Findchips.com

    8.00T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    V56C1512164MD

    Abstract: No abstract text available
    Text: V56C1512164MD HIGH PERFORMANCE MOBILE 1.8 VOLT 32M X 16 DDR SDRAM 4 BANKS X 8M X 16 5 6 75 10 unit System Frequency fCK 400 MHz 333 MHz 266 MHz 200 MHz MHz Clock Cycle Time (tCK3) 5.0 6.0 7.5 10.0 ns Output data access Time (tCK3) Features Description -


    Original     		PDF V56C1512164MD cycles/64ms 60-ball

    H5MS1G62

    Abstract: H5MS1G62MFP-J3M H5MS1G62MFP hynix mcp h5ms1g DDR400 ap die hen mcp H5MS1G62MFP-K3M
    Text: 1Gbit MOBILE DDR SDRAM based on 16M x 4Bank x16 I/O Specification of 1Gb 64Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 16,777,216 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 64Mx16bit) 16bit) H5MS1G62MFP page22) 00Typ. H5MS1G62 H5MS1G62MFP-J3M hynix mcp h5ms1g DDR400 ap die hen mcp H5MS1G62MFP-K3M

    H5MS5162

    Abstract: H5MS5162DFR h5ms5162dfr-j3m hynix mcp DDR333 DDR370 DDR400
    Text: 512Mbit MOBILE DDR SDRAM based on 8M x 4Bank x16 I/O Specification of 512Mb 32Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 8,388,608 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512Mbit 512Mb 32Mx16bit) 512Mbit 16bit) H5MS5162DFR 16bits) H5MS5162 h5ms5162dfr-j3m hynix mcp DDR333 DDR370 DDR400

    HY5MS5B6BL

    Abstract: HY5MS5B6BLFP
    Text: 256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Document Title 256Mbit 4Bank x 4M x 16bits MOBILE DDR SDRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Apr. 2007 Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 256Mbit 256Mbit 16bits) 16bit) 00Typ. HY5MS5B6BL HY5MS5B6BLFP

    HY5MS5B6BLFP

    Abstract: HY5MS5B6BL
    Text: 128Mbit MOBILE DDR SDRAM based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 128Mbit 8Mx16bit) 128Mbit 16bit) H5MS1262EFP 16bits) HY5MS5B6BLFP HY5MS5B6BL

    Untitled

    Abstract: No abstract text available
    Text: 256MBit MOBILE DDR SDRAMs based on 4M x 4Bank x16 I/O Document Title 256MBit 4Bank x 4M x 16bits MOBILE DDR SDRAM Memory Revision History Revision No. History Draft Date Remark 1.0 Release Aug. 2006 Final This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 256MBit 256MBit 16bits) 16Mx16bit) 00Typ.

    hynix memory lpddr

    Abstract: DDR200 DDR266 DDR333 RA12 PAGE-60 HY5MS5B6LF-H
    Text: 256MBit MOBILE ddr SDRAMs based on 4M x 4Bank x16 I/O Document Title 256MBit 4Bank x 4M x 16bits MOBILE DDR SDRAM Memory Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Aug.2004 Preliminary 0.2 Modify IDD Current Oct.2004 Preliminary


    Original     		PDF 256MBit 256MBit 16bits) 11Preliminary 16Mx16bit) 00Typ. hynix memory lpddr DDR200 DDR266 DDR333 RA12 PAGE-60 HY5MS5B6LF-H

    Untitled

    Abstract: No abstract text available
    Text: V56C1512164MD HIGH PERFORMANCE MOBILE 1.8 VOLT 32M X 16 DDR SDRAM 4 BANKS X 8M X 16 5 6 75 10 unit System Frequency fCK 400 MHz 333 MHz 266 MHz 200 MHz MHz Clock Cycle Time (tCK3) 5.0 6.0 7.5 10.0 ns Output data access Time (tCK3) Features Description -


    Original     		PDF V56C1512164MD cycles/64ms 60-ball V56C1512164MD

    H5MS2562JFR

    Abstract: H5MS2 h5ms2562jfr-j3m H5MS2562
    Text: 256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Specification of 256Mb 16Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 256Mbit 256Mb 16Mx16bit) 256Mbit 16bits) 16bit) H5MS2562JFR 00Typ. H5MS2 h5ms2562jfr-j3m H5MS2562

    H5MS2562

    Abstract: H5MS2562JFR hynix mcp H5MS2562JFR-J3M DDR370 16M X 32 SDR SDRAM H5MS256
    Text: 256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Specification of 256Mb 16Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 256Mbit 256Mb 16Mx16bit) 256Mbit 16bits) 16bit) H5MS2562JFR 00Typ. H5MS2562 hynix mcp H5MS2562JFR-J3M DDR370 16M X 32 SDR SDRAM H5MS256

    hynix memory lpddr

    Abstract: DDR200 DDR266 DDR333 RA12 16Mx16bit HY5MS5B6ALFP
    Text: 256MBit MOBILE DDR SDRAMs based on 4M x 4Bank x16 I/O Document Title 256MBit 4Bank x 4M x 16bits MOBILE DDR SDRAM Memory Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Feb.2006 Preliminary Note 1) Now under evaluation by the Hynix Development Division.


    Original     		PDF 256MBit 256MBit 16bits) 11Preliminary 16Mx16bit) 00Typ. hynix memory lpddr DDR200 DDR266 DDR333 RA12 16Mx16bit HY5MS5B6ALFP

    Untitled

    Abstract: No abstract text available
    Text: 256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Document Title 256Mbit 4Bank x 4M x 16bits MOBILE DDR SDRAM Revision History Revision No. History Draft Date Remark Preliminary 0.1 - Initial Draft Apr. 2007 1.0 - Added some notes for operating voltage and temperature


    Original     		PDF 256Mbit 256Mbit 16bits) LPDDR266/200 16bit) 00Typ.

    H5MS5162

    Abstract: h5ms H5MS5162DFR
    Text: 512Mbit MOBILE DDR SDRAM based on 8M x 4Bank x16 I/O Specification of 512Mb 32Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 8,388,608 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 512Mbit 512Mb 32Mx16bit) 512Mbit 16bit) H5MS5162DFR 16bits) DDR333 DDR400 H5MS5162 h5ms

    Untitled

    Abstract: No abstract text available
    Text: 512Mbit MOBILE DDR SDRAM based on 8M x 4Bank x16 I/O Document Title 512Mbit 4Bank x 8M x 16bits MOBILE DDR SDRAM Revision History Revision No. History Draft Date Remark 0.1 - Initial Draft Sep.2006 Preliminary 0.2 - Added SRR function and timing diagram


    Original     		PDF 512Mbit 512Mbit 16bits) 16bit) 00Typ.

    LA7687

    Abstract: csb 400p transistor SMD t05 CSA4.00MG CSAC 2.00 MGC CST4.00MGW SMD W05 77 transistor SMD t04 U455 csa 8.00mt
    Text: This is the PDF file of catalog No.P27E-10. No.P27E10.pdf 98.6.30 CERAMIC RESONATOR CERALOCK CERAMIC RESONATOR (CERALOCK®) Murata Manufacturing Co., Ltd. Cat.No.P16E-10 This is the PDF file of catalog No.P27E-10. No.P27E10.pdf 98.6.30 !CONTENTS Types


    Original     		PDF P27E-10. P27E10 P16E-10 49MHz 50MY10 00MHz 01MY60MHz 00MY60MHz LA7687 csb 400p transistor SMD t05 CSA4.00MG CSAC 2.00 MGC CST4.00MGW SMD W05 77 transistor SMD t04 U455 csa 8.00mt

    csb 400p

    Abstract: CSA4.00MG CSB 600P CSB455E csb 455j CSB455J csb 400j 455J u455 CST4.00MGW
    Text: このカタログはNo.P27-10をムラタのwebサイトよりPDF形式でダウンロードしたものです。 No.P27J10.pdf 98.6.22 セラミック発振子（セラロック ） CERAMIC RESONATOR CERALOCK® Cat.No.P27-10 No.P27J10.pdf 98.6.22 このカタログはNo.P27-10をムラタのwebサイトよりPDF形式でダウンロードしたものです。


    Original     		PDF P2710webPDF P27J10 P27-10 49MHz 50M10 00MHz 01M60MHz csb 400p CSA4.00MG CSB 600P CSB455E csb 455j CSB455J csb 400j 455J u455 CST4.00MGW

    hynix mcp

    Abstract: HY5MS5B6BL H5MS1262EFP 2Mx16
    Text: 128Mbit MOBILE DDR SDRAM based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 128Mbit 8Mx16bit) 128Mbit 16bits) 16bit) H5MS1262EFP 00Typ. hynix mcp HY5MS5B6BL 2Mx16

    LPDDR200

    Abstract: HY5MS7B6BLFP
    Text: 512Mbit MOBILE DDR SDRAM based on 8M x 4Bank x16 I/O Document Title 512Mbit 4Bank x 8M x 16bits MOBILE DDR SDRAM Revision History Revision No. History Draft Date Remark 0.1 - Initial Draft Sep.2006 Preliminary 0.2 - Added SRR function and timing diagram


    Original     		PDF 512Mbit 512Mbit 16bits) LPDDR266 16bit) 00Typ. LPDDR200 HY5MS7B6BLFP

    LA7687

    Abstract: CSB455E CSA4.00MG U455 CST4.00MGW M34550M4 LA7687 sanyo 14 LA7687 sanyo 14" CST400MGW U-455
    Text: This is the PDF file of catalog No.P27E-10. No.P27E10.pdf 98.6.30 CERAMIC RESONATOR Ceramic Resonator CSU/CST Series CERALOCK with built in loading capacitors. MURATA's ceramic resonator, CERALOCK®,has been widely applied as the most suitable component for clock


    Original     		PDF P27E-10. P27E10 MC13022P 450kHz to12k 60MGF103 LA7687 CSB455E CSA4.00MG U455 CST4.00MGW M34550M4 LA7687 sanyo 14 LA7687 sanyo 14" CST400MGW U-455

    Untitled

    Abstract: No abstract text available
    Text: REV. — -A ± 0.30 [.0 1 2 ]- ro D E S C R IP T IO N RELEASE D A TE D ec. 10. 2 0 0 3 1 2 o 10.00 [.394] in 1.00 [.039] TYP. 00 □□□□□□□□□ MM M l DDDDDDDDDDDDDDDDD UUUUliUUUUliU nnnnnnnnnnn uuu u u nnnnn □□□□□□□□□□□


    OCR Scan     		PDF

    M83-LML3M5N25-0101-333

    Abstract: No abstract text available
    Text: Customer Information Sheet D R A W I N G No.: M 8 3 - L M L 3 M 5 N 2 5 - 0 10 1 - 333 I S H E E T 2 OF 2 C O N T A C T No. IF IN D O U B T - AS K | | NOT T O S C A L E THIRD ANGLE PROJECTION ALL D I M E N S I O N S IN m m I SPECIFICATIONS: M A TE R I A L :


    OCR Scan     		PDF LML3M5N25-01 i-U444 M83-LML3M5N25-0101-333 M83-LML3M5N25-0101-333